Patents by Inventor Gun Chen

Gun Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240194682
    Abstract: The present disclosure describes an apparatus with a local interconnect structure. The apparatus can include a first transistor, a second transistor, a first interconnect structure, a second interconnect structure, and a third interconnect structure. The local interconnect structure can be coupled to gate terminals of the first and second transistors and routed at a same interconnect level as reference metal lines coupled to ground and a power supply voltage. The first interconnect structure can be coupled to a source/drain terminal of the first transistor and routed above the local interconnect structure. The second interconnect structure can be coupled to a source/drain terminal of the second transistor and routed above the local interconnect structure. The third interconnect structure can be routed above the local interconnect structure and at a same interconnect level as the first and second interconnect structures.
    Type: Application
    Filed: January 22, 2024
    Publication date: June 13, 2024
    Applicant: Tiawan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Liang CHEN, Cheng-Chi Chuang, Chih-Ming Lai, Chia-Tien WU, Charles Chew-Yuen Young, Hui-Ting Yang, Jiann-Tyng Tzeng, Ru-Gun Liu, Wei-Cheng Lin, Lei-Chun Chou, Wei-An Lai
  • Publication number: 20240178002
    Abstract: A method includes forming a material layer over a substrate, forming a first hard mask (HM) layer over the material layer, forming a first trench, along a first direction, in the first HM layer. The method also includes forming first spacers along sidewalls of the first trench, forming a second trench in the first HM layer parallel to the first trench, by using the first spacers to guard the first trench. The method also includes etching the material layer through the first trench and the second trench, removing the first HM layer and the first spacers, forming a second HM layer over the material layer, forming a third trench in the second HM layer. The third trench extends along a second direction that is perpendicular to the first direction and overlaps with the first trench. The method also includes etching the material layer through the third trench.
    Type: Application
    Filed: February 5, 2024
    Publication date: May 30, 2024
    Inventors: Yung-Sung Yen, Chung-Ju Lee, Chun-Kuang Chen, Chia-Tien Wu, Ta-Ching Yu, Kuei-Shun Chen, Ru-Gun Liu, Shau-Lin Shue, Tsai-Sheng Gau, Yung-Hsu Wu
  • Patent number: 11994805
    Abstract: A method of operating a semiconductor apparatus includes generating an air flow that flows from a covering structure; causing a photomask to move over the covering structure such that particles attached to the photomask are blown away from the photomask by the air flow; and irradiating the photomask with light through a light transmission region of the covering structure.
    Type: Grant
    Filed: January 12, 2023
    Date of Patent: May 28, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Ming Chang, Chiu-Hsiang Chen, Ru-Gun Liu
  • Publication number: 20240096867
    Abstract: A semiconductor structure is provided and includes a first gate structure, a second gate structure, and at least one local interconnect that extend continuously across a non-active region from a first active region to a second active region. The semiconductor structure further includes a first separation spacer disposed on the first gate structure and first vias on the first gate structure. The first vias are arranged on opposite sides of the first separation spacer are isolated from each other and apart from the first separation spacer by different distances.
    Type: Application
    Filed: December 1, 2023
    Publication date: March 21, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Charles Chew-Yuen YOUNG, Chih-Liang CHEN, Chih-Ming LAI, Jiann-Tyng TZENG, Shun-Li CHEN, Kam-Tou SIO, Shih-Wei PENG, Chun-Kuang CHEN, Ru-Gun LIU
  • Patent number: 11916077
    Abstract: The present disclosure describes an apparatus with a local interconnect structure. The apparatus can include a first transistor, a second transistor, a first interconnect structure, a second interconnect structure, and a third interconnect structure. The local interconnect structure can be coupled to gate terminals of the first and second transistors and routed at a same interconnect level as reference metal lines coupled to ground and a power supply voltage. The first interconnect structure can be coupled to a source/drain terminal of the first transistor and routed above the local interconnect structure. The second interconnect structure can be coupled to a source/drain terminal of the second transistor and routed above the local interconnect structure. The third interconnect structure can be routed above the local interconnect structure and at a same interconnect level as the first and second interconnect structures.
    Type: Grant
    Filed: May 24, 2021
    Date of Patent: February 27, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Liang Chen, Cheng-Chi Chuang, Chih-Ming Lai, Chia-Tien Wu, Charles Chew-Yuen Young, Hui-Ting Yang, Jiann-Tyng Tzeng, Ru-Gun Liu, Wei-Cheng Lin, Lei-Chun Chou, Wei-An Lai
  • Publication number: 20130342314
    Abstract: The present invention relates to a smart lock structure and an operating method thereof. The smart lock structure comprises a key hole for access keys, an interrogating device for using radio frequency technology to communicate with a mobile device and accept access requests from the mobile device to unlock the smart key structure, and a lock mechanism in response to interaction between the key hole and the access keys and communication between the interrogating device and the mobile device for unlocking the smart lock structure and gaining access thereof. The smart lock structure further comprises a falling proof device equipped beside the interrogating device to prevent falling of the mobile device. An operating method is also provided for normal operation and/or configuration of the smart lock structure.
    Type: Application
    Filed: June 22, 2012
    Publication date: December 26, 2013
    Inventors: Gun Chen, Shu-Shian Lin