Patents by Inventor GUNHYO LEE

GUNHYO LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thin-film transistor and zinc oxide-based sputtering target for the same
    Patent number: 9035297
    Abstract: A thin-film transistor includes a metal electrode and a zinc oxide-based barrier film that blocks a material from diffusing out of the metal electrode. The zinc oxide-based barrier film is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based barrier film. A zinc oxide-based sputtering target for deposition of a barrier film of a thin-film transistor is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based sputtering target.
    Type: Grant
    Filed: June 28, 2013
    Date of Patent: May 19, 2015
    Assignees: SAMSUNG CORNING PRECISION MATERIALS CO., LTD., SAMSUNG DISPLAY CO., LTD., SAMSUNG CORNING ADVANCED GLASS, LLC
    Inventors: Jaewoo Park, Yoon Gyu Lee, Do-Hyun Kim, Dongjo Kim, Juok Park, Insung Sohn, Sangwon Yoon, Gunhyo Lee, Yongjin Lee, Woo-Seok Jeon
  • THIN-FILM TRANSISTOR AND ZINC OXIDE-BASED SPUTTERING TARGET FOR THE SAME
    Publication number: 20140001469
    Abstract: A thin-film transistor includes a metal electrode and a zinc oxide-based barrier film that blocks a material from diffusing out of the metal electrode. The zinc oxide-based barrier film is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based barrier film. A zinc oxide-based sputtering target for deposition of a barrier film of a thin-film transistor is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based sputtering target.
    Type: Application
    Filed: June 28, 2013
    Publication date: January 2, 2014
    Inventors: Jaewoo PARK, Yoon Gyu LEE, Do-Hyun KIM, Dongjo KIM, Juok PARK, Insung SOHN, Sangwon YOON, Gunhyo LEE, Yongjin LEE, Woo-Seok JEON
  • ZINC OXIDE-BASED SPUTTERING TARGET, METHOD OF MANUFACTURING THE SAME, AND THIN-FILM TRANSISTOR HAVING BARRIER LAYER DEPOSITED USING THE SAME
    Publication number: 20130341181
    Abstract: A zinc oxide (ZnO)-based sputtering target, a method of manufacturing the same, and a thin-film transistor (TFT) having a barrier layer deposited using the same. The zinc oxide-based sputtering target includes a sinter containing zinc oxide doped with gallium oxide, the content of the gallium oxide ranging, by weight, from 10 to 50 percent of the sinter, and a backing plate bonded to the rear surface of the sinter to support the sinter. The zinc oxide-based sputtering target can be subjected to direct current (DC) sputtering, and improve the contact and etching characteristics of a barrier layer that is deposited using the same.
    Type: Application
    Filed: June 26, 2013
    Publication date: December 26, 2013
    Inventors: JAEWOO PARK, DONGJO KIM, DO-HYUN KIM, WOO-SEOK JEON, JUOK PARK, INSUNG SOHN, SANGWON YOON, GUNHYO LEE, YONGJIN LEE, YOONGYU LEE