Abstract: A proximity sensor system includes a sensor matrix array having a characteristic capacitance on horizontal and vertical conductors connected to sensor pads. The capacitance changes as a function of the proximity of an object or objects to the sensor matrix. The change in capacitance of each node in both the X and Y directions of the matrix due to the approach of an object is converted to a set of voltages in the X and Y directions. These voltages are processed by digital circuitry to develop electrical signals representative of the centroid of the profile of the object, i.e, its position in the X and Y dimensions. Noise reduction and background level setting techniques inherently available in the architecture are employed.

Abstract: A proximity sensor system includes a sensor matrix array having a characteristic capacitance on horizontal and vertical conductors connected to sensor pads. The capacitance changes as a function of the proximity of an object or objects to the sensor matrix. The change in capacitance of each node in both the X and Y directions of the matrix due to the approach of an object is converted to a set of voltages in the X and Y directions. These voltages are processed by digital circuitry to develop electrical signals representative of the centroid of the profile of the object, i.e, its position in the X and Y dimensions. Noise reduction and background level setting techniques inherently available in the architecture are employed.

Abstract: Novel high voltage electronic amplifiers that are capable of being monolithically integrated using low voltage semiconductor fabrication processes are described and claimed. A cascade of low voltage current mirrors is described that can act as a high voltage amplifier output circuit. A transconductor and level shift circuit is also described that can be employed in the high voltage amplifier output circuit. A high voltage current source is described and is constructed from the series combination of a low voltage transistor and a parasitic field oxide transistor. Additionally, a differential amplifier having bias-current shunting transistors is described that can be used to limit quiescent current from the output power supply of the high voltage amplifiers.

Abstract: A circuit for generating N analog voltage signals for reference or bias use employs N analog floating gate storage devices. Circuitry is provided so that all floating gate storage devices can be programmed to their target voltages individually or in parallel. Electron injection circuitry is provided for injecting electrons on to and a tunneling structure is provided for removing electrons from the floating gate of each floating gate storage device. A transistor structure with a lightly doped drain is provided for control of the tunneling structure. A capacitor is connected to each floating gate node to provide control of the injection structure. A dynamic analog storage element is provided to store the target voltage for the floating gate storage device. A comparator is provided to monitor the floating gate voltage and target voltage and control tunneling and injection. A digital storage device is provided to statically store the output of the comparator.

Abstract: A handheld computing device comprises a thin enclosure having two opposing major faces. A display screen is disposed on a first one of the major opposing faces of the enclosure and a touch-sensitive object position detector input device is disposed on a second one of the major opposing faces of the enclosure. Computing device circuitry, circuitry for interfacing the touch-sensitive object position detector to the computing device circuitry, and circuitry for driving the display screen are all disposed within the enclosure.

Abstract: A circuit for generating N analog voltage signals for reference or bias use employs N analog floating gate storage devices. Circuitry is provided so that all floating gate storage devices can be programmed to their target voltages individually or in parallel. Electron injection circuitry is provided for injecting electrons on to and a tunneling structure is provided for removing electrons from the floating gate of each floating gate storage device. A transistor structure with a lightly doped drain is provided for control of the tunneling structure. A capacitor is connected to each floating gate node to provide control of the injection structure. A dynamic analog storage element is provided to store the target voltage for the floating gate storage device. A comparator is provided to monitor the floating gate voltage and target voltage and control tunneling and injection. A digital storage device is provided to statically store the output of the comparator.

Abstract: A proximity sensor system includes a sensor matrix array having a characteristic capacitance on horizontal and vertical conductors connected to sensor pads. The capacitance changes as a function of the proximity of an object or objects to the sensor matrix. The change in capacitance of each node in both the X and Y directions of the matrix due to the approach of an object is converted to a set of voltages in the X and Y directions. These voltages are processed by analog circuitry to develop electrical signals representative of the centroid of the profile of the object, i.e, its position in the X and Y dimensions. The profile of position may also be integrated to provide Z-axis (pressure) information.

Abstract: A circuit for use as a channel of a minimum selector and subtractor circuit includes a P-Channel MOS transistor having a gate connected to an input node, a source connected to the output of a current source, and a drain connected to a fixed voltage source. The source of the P-Channel transistor is connectable to a common conductive line through a first switch. The source of the P-Channel transistor is also connected to the non-inverting input of a transconductance amplifier. The inverting input of the transconductance amplifier is connected to a first plate of a capacitor. The second plate of the capacitor is connected to a fixed voltage source such as ground. The output of the transconductance amplifier is connectable to its inverting input through a second switch. The output of the transconductance amplifier forms the output of the minimum selector and subtractor circuit. A plurality of individual channel circuits may all be connected to the common conductive line.

Abstract: A proximity sensor system includes a sensor matrix array having a characteristic capacitance on horizontal and vertical conductors connected to sensor pads. The capacitance changes as a function of the proximity of an object or objects to the sensor matrix. The change in capacitance of each node in both the X and Y directions of the matrix due to the approach of an object is converted to a set of voltages in the X and Y directions. These voltages are processed by analog circuitry to develop electrical signals representative of the centroid of the profile of the object, i.e., its position in the X and Y dimensions. The profile of position may also be integrated to provide Z-axis (pressure) information.

Abstract: A reference voltage source which provides a plurality of reference voltages with equal step size between voltages despite loads connected to the reference voltage source. The reference voltage source is composed of a plurality of slave resistors connected in series to produce a plurality of output nodes and a plurality of master resistors connected in series to produce a plurality of compensation nodes. Each compensation node corresponds with one of the output nodes. A compensation resistor connects between a compensation node and the corresponding output node. A current flows through the slave resistors to generate a reference voltage at each output node.