Abstract: The present invention is directed to a Gd2O2S:M fluorescent ceramic material with a very short afterglow, wherein M represents at least one element selected from the group Pr, Th, Yb, Dy, Sm and/or Ho and the Gd2O2S:M fluorescent ceramic material comprises further: europium of ?1 wt. ppm based on Gd2O2S, and cerium of ?0.1 wt. ppm to ?100 wt. ppm based on Gd2O2S, wherein the content of cerium is in excess of the content of europium with a ratio of europium to cerium of 1:10 to 1:150.

Abstract: The present invention relates to a fluorescent ceramic having the general formula Gd2O2S doped with M, whereby M represents at least one element selected form the group Ce, Pr, Eu, Tb, Yb, Dy, Sm and/or Ho, whereby said fluorescent ceramic comprises a single phase in its volume; to a method for manufacturing a fluorescent ceramic using single-axis hot pressing; a detector for detecting ionizing radiation and to a use of said detector for detecting ionizing radiation. The method for manufacture of a fluorescent ceramic material using a single-axis hot pressing, comprises the steps: a) selecting a pigment powder of Gd2O2S doped with M, and M represents at least one element selected from the group of Eu, Tb, Yb, Dy, Sm, Ho, Ce and/or Pr, whereby the grain size of said powder used for hot-pressing is of 1 ?m, and said hot-pressing is carried out at—a temperature of 1000° C. to 1400° C.; and/or—a pressure of 100 Mpa to 300 MPa; air annealing at a temperature of 700° C. to 1200° for a time period of 0.

Abstract: A power supply for generating a high output voltage for supplying an X-ray generator system with at least one X-ray source (17), especially for computer tomography (CT) applications is disclosed, wherein the high output voltage comprises at least two different high output voltage levels (U1; U1±U2) which are fast switchable so that spectral CT measurements can be conducted with one conventional X-ray tube (17). Furthermore, an X-ray tube generator system comprising such a power supply and at least one X-ray tube (17), as well as a computer tomography (CT) apparatus comprising such a power supply is disclosed.

Abstract: The invention relates to a method of measuring and/or judging the afterglow in ceramic materials, especially Gd2?2S materials and/or precursor materials by measuring the Eu-, Tb- and/or Yb-content.

Abstract: The invention relates to an Anti-Scatter-Grid (ASG) with lamellae (2) that absorb incident radiation (1, 8) and that produce an electrical signal proportional to the amount of absorbed radiation. The lamellae (2) may particularly consist of a semiconductor material in which photons produce electron-hole pairs that can be detected with the help of electrodes (3, 4, 6) on the sidewalls of the lamellae (2). The amount of absorbed scattered (8) or primary (1) radiation may thus be determined in a spatially resolved way, allowing to correct the image generated by an array (5) of sensor units (9).

Abstract: The invention relates to an X-ray detector with an array of pixels (10) that are composed of a scintillation layer (11), a coupling layer (12), and a sensitive layer (13). The coupling layer (12) comprises light guiding units (17) and shielding units (16), wherein the shielding units (16) are disposed above electronic processing circuits (15a, 15b) that are susceptible to disturbances by X-radiation. In an alternative embodiment, the coupling layer comprises a material like lead-glass that is transparent for light and absorbing for X-radiation. Preferably a wavelength-shifting material incorporated into the coupling layer (12) shifts the wavelength (?1) of the photons generated in the scintillation layer (11) to values (?2) at which the sensitive layer (13) has a higher sensitivity.

Abstract: The invention relates to an Anti-Scatter-Grid (ASG) with lamellae (2) that absorb incident radiation (1, 8) and that produce an electrical signal proportional to the amount of absorbed radiation. The lamellae (2) may particularly consist of a semiconductor material in which photons produce electron-hole pairs that can be detected with the help of electrodes (3, 4, 6) on the sidewalls of the lamellae (2). The amount of absorbed scattered (8) or primary (1) radiation may thus be determined in a spatially resolved way, allowing to correct the image generated by an array (5) of sensor units (9).

Abstract: The invention relates to an X-ray detector with an array of pixels (10) that are composed of a scintillation layer (11), a coupling layer (12), and a sensitive layer (13). The coupling layer (12) comprises light guiding units (17) and shielding units (16), wherein the shielding units (16) are disposed above electronic processing circuits (15a, 15b) that are susceptible to disturbances by X-radiation. In an alternative embodiment, the coupling layer comprises a material like lead-glass that is transparent for light and absorbing for X-radiation. Preferably a wavelength-shifting material incorporated into the coupling layer (12) shifts the wavelength (?1) of the photons generated in the scintillation layer (11) to values (?2) at which the sensitive layer (13) has a higher sensitivity.

Abstract: The present invention relates to a fluorescent ceramic having the general formula Gd2O2S doped with M, whereby M represents at least one element selected form the group Ce, Pr, Eu, Tb, Yb, Dy, Sm and/or Ho, whereby said fluorescent ceramic comprises a single phase in its volume; to a method for manufacturing a fluorescent ceramic using single-axis hot pressing; a detector for detecting ionizing radiation and to a use of said detector for detecting ionizing radiation. The method for manufacture of a fluorescent ceramic material using a single-axis hot pressing, comprises the steps: a) selecting a pigment powder of Gd2O2S doped with M, and M represents at least one element selected from the group of Eu, Tb, Yb, Dy, Sm, Ho, Ce and/or Pr, whereby the grain size of said powder used for hot-pressing is of 1 ?m, and said hot-pressing is carried out at—a temperature of 1000° C. to 1400° C.; and/or—a pressure of 100 Mpa to 300 MPa; air annealing at a temperature of 700° C. to 1200° for a time period of 0.

Abstract: The present invention is directed to a Gd2O2S:M fluorescent ceramic material with a very short afterglow, wherein M represents at least one element selected from the group Pr, Th, Yb, Dy, Sm and/or Ho and the Gd2O2S:M fluorescent ceramic material comprises further: europium of ?1 wt. ppm based on Gd2O2S, and cerium of ?0.1 wt. ppm to ?100 wt. ppm based on Gd2O2S, wherein the content of cerium is in excess of the content of europium with a ratio of europium to cerium of 1:10 to 1:150.