Patents by Inventor Gunther Obermeier

Gunther Obermeier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for the production of an epitaxially grown semiconductor wafer
    Patent number: 6630024
    Abstract: A method for the production of a semiconductor wafer having a front and a back and an epitaxial layer of semiconductor material deposited on the front, includes the following process steps: (a) preparing a substrate wafer having a polished front and a specific thickness; (b) pretreating the front of the substrate wafer in the presence of HCl gas and a silane source at a temperature of from 950 to 1250 degrees Celsius in an epitaxy reactor, the thickness of the substrate wafer remaining substantially unchanged; and (c) depositing the epitaxial layer on the front of the pretreated substrate wafer.
    Type: Grant
    Filed: May 24, 2001
    Date of Patent: October 7, 2003
    Assignee: Wacker Siltronic Gesellschaft für Halbleitermaterialien AG
    Inventors: Rüdiger Schmolke, Reinhard Schauer, Günther Obermeier, Dieter Gräf, Peter Storck, Klaus Messmann, Wolfgang Siebert
  • SEMICONDUCTOR WAFER WITH CRYSTAL LATTICE DEFECTS, AND PROCESS FOR PRODUCING THIS SEMICONDUCTOR WAFER
    Publication number: 20030129834
    Abstract: A semiconductor wafer has a front side 1, a back side 2, a top layer 3, a bottom layer 4, an upper inner layer 5 lying below the top layer 3, a lower inner layer 6 lying above the bottom layer 4, a central region 7 between the layers 5 and 6 and an uneven distribution of crystal lattice defects. The concentration of the defects exhibits a first maximum (max1) in the central region 7 and a second maximum (max2) in the bottom layer 4.
    Type: Application
    Filed: May 19, 2000
    Publication date: July 10, 2003
    Inventors: Dr. Gunther Obermeier, Reinhold Wahlich, Dr. Theresia Bauer, Alfred Buchner
  • Semiconductor wafer with crystal lattice defects, and process for producing this semiconductor wafer
    Patent number: 6579589
    Abstract: A semiconductor wafer has a front side 1, a back side 2, a top layer 3, a bottom layer 4, an upper inner layer 5 lying below the top layer 3, a lower inner layer 6 lying above the bottom layer 4, a central region 7 between the layers 5 and 6 an uneven distribution of crystal lattice defects. The concentration of the defects exhibits a first maximum (max1) in the central region 7 and a second maximum (max2) in the bottom layer 4.
    Type: Grant
    Filed: May 19, 2000
    Date of Patent: June 17, 2003
    Assignee: Wackersiltronic Gesellschaft fur Halbleitermaterialien AG
    Inventors: Günther Obermeier, Reinhold Wahlich, Theresia Bauer, Alfred Buchner
  • Semiconductor wafer with crystal lattice defects, and process for producing this wafer
    Patent number: 6395653
    Abstract: A semiconductor wafer has a front side 1, a back side 2, a top layer 3, a bottom layer 4, an upper inner layer 5 lying beneath the top layer 3, an lower inner layer 6 lying above the bottom layer 4, a central region 7 between the layers 5 and 6, and an uneven distribution of crystal lattice defects. The crystal lattice defects are substitutionally or interstitially included nitrogen or vacancies.
    Type: Grant
    Filed: May 22, 2000
    Date of Patent: May 28, 2002
    Assignee: Wacker Siltronic Gesellschaft für Halbleitermaterialien AG
    Inventors: Gunther Obermeier, Alfred Buchner, Theresia Bauer, Jürgen Hage, Rasso Ostermeir, Wilfried Von Ammon
  • Method for the production of an epitaxially grown semiconductor wafer
    Publication number: 20020022351
    Abstract: A method for the production of a semiconductor wafer having a front and a back and an epitaxial layer of semiconductor material deposited on the front, includes the following process steps:
    Type: Application
    Filed: May 24, 2001
    Publication date: February 21, 2002
    Inventors: Rudiger Schmolke, Reinhard Schauer, Gunther Obermeier, Dieter Graf, Peter Storck, Klaus Mebmann, Wolfgang Siebert