Abstract: An advanced high-resolution and high-throughput shadow edge (116) lithography (SEL) method is disclosed for forming uniform zero- one- and two-dimensional nanostructures on a substrate. The method entails high-vacuum oblique vapor deposition and a compensated shadow effect of a pre-patterned layer (100). A method of compensating for cross-substrate variation is also disclosed. The compensation approach enables routine, low-cost fabrication of uniform nanoscale features, or nanogaps (110) on the order of 10 nm±1 nm, that can be used to etch nanowells (196) or to form nanostructures such as nanowires (169), using a selective metal lift-off process. A wafer-scale analytical model is proposed for predicting the width of nanogaps (110) fabricated by the shadow effect on pre-patterned edges. By combining compensation and pattern reversal techniques with multiple shadow patterning, two-dimensional structures such as crossing nanowires may be generated.

Abstract: A paste including metal or metal alloy particles (which are preferably silver or silver alloy), a dispersant material, and a binder is used to form an electrical, mechanical or thermal interconnect between a device and a substrate. By using nanoscale particles (i.e., those which are less than 500 nm in size and most preferably less than 100 nm in size), the metal or metal alloy particles can be sintered at a low temperature to form a metal or metal alloy layer which is desired to allow good electrical, thermal and mechanical bonding, yet the metal or metal alloy layer can enable usage at a high temperature such as would be desired for SiC, GaN, or diamond (e.g., wide bandgap devices). Furthermore, significant application of pressure to form the densified layers is not required, as would be the case with micrometer sized particles.

Abstract: Methods of attaching high-temperature electrical components to substrates are provided. The methods involve of attachment of high-temperature components to substrates via a nano-metal film.