Patents by Inventor Guogong Wang

Guogong Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatus and methods for power enhancement of self-biased distributed amplifiers with gate bias networks
    Patent number: 10014826
    Abstract: Provided herein are apparatus and methods for power enhancement of self-biased distributed amplifiers with gate bias networks. By sampling output power a gate bias network with a filter network can adjust gate bias so as to improve the P1 dB compression point and the Psat saturation power level of a self-biased distributed amplifier. Advantageously the filter network can be derived using passive components thereby making it an easy to implement and cost effective approach to improve linearity and output power.
    Type: Grant
    Filed: December 10, 2015
    Date of Patent: July 3, 2018
    Assignee: Analog Devices, Inc.
    Inventors: Peter J. Katzin, Haoyang Yu, Guogong Wang
  • APPARATUS AND METHODS FOR POWER ENHANCEMENT OF SELF-BIASED DISTRIBUTED AMPLIFIERS WITH GATE BIAS NETWORKS
    Publication number: 20170170787
    Abstract: Provided herein are apparatus and methods for power enhancement of self-biased distributed amplifiers with gate bias networks. By sampling output power a gate bias network with a filter network can adjust gate bias so as to improve the P1 dB compression point and the Psat saturation power level of a self-biased distributed amplifier. Advantageously the filter network can be derived using passive components thereby making it an easy to implement and cost effective approach to improve linearity and output power.
    Type: Application
    Filed: December 10, 2015
    Publication date: June 15, 2017
    Inventors: Peter J. Katzin, Haoyang Yu, Guogong Wang
  • Front and backside processed thin film electronic devices
    Patent number: 8089073
    Abstract: This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.
    Type: Grant
    Filed: September 8, 2010
    Date of Patent: January 3, 2012
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Paul G. Evans, Max G. Lagally, Zhenqiang Ma, Hao-Chih Yuan, Guogong Wang, Mark A. Eriksson
  • Method for fabricating high-speed thin-film transistors
    Patent number: 7960218
    Abstract: This invention provides methods for fabricating high speed TFTs from silicon-on-insulator and bulk single crystal semiconductor substrates, such as Si(100) and Si(110) substrates. The TFTs may be designed to have a maximum frequency of oscillation of 3 GHz, or better.
    Type: Grant
    Filed: September 8, 2006
    Date of Patent: June 14, 2011
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Zhenqiang Ma, Hao-Chih Yuan, Guogong Wang
  • FRONT AND BACKSIDE PROCESSED THIN FILM ELECTRONIC DEVICES
    Publication number: 20100327355
    Abstract: This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.
    Type: Application
    Filed: September 8, 2010
    Publication date: December 30, 2010
    Inventors: Hao-Chih Yuan, Guogong Wang, Mark A. Eriksson, Paul G. Evans, Max G. Lagally, Zhenqiang Ma
  • High-power common-base amplifier employing current source output bias
    Patent number: 7830208
    Abstract: A common-base amplifier for a bipolar junction transistor or a heterojunction bipolar transistor employs an active current source output biasing to provide for improved power output in a power saturation region providing increased power for a given transistor area such as may be advantageous in mobile radio transmitters or the like.
    Type: Grant
    Filed: September 18, 2008
    Date of Patent: November 9, 2010
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Zhenqiang Ma, Guogong Wang, Guoxuan Qin
  • Front and backside processed thin film electronic devices
    Patent number: 7812353
    Abstract: This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.
    Type: Grant
    Filed: March 4, 2008
    Date of Patent: October 12, 2010
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Hao-Chih Yuan, Guogong Wang, Mark A. Eriksson, Paul G. Evans, Max G. Lagally, Zhenqiang Ma
  • Method for fabricating high-speed thin-film transistors
    Publication number: 20100078722
    Abstract: This invention provides methods for fabricating high speed TFTs from silicon-on-insulator and bulk single crystal semiconductor substrates, such as Si(100) and Si(110) substrates. The TFTs may be designed to have a maximum frequency of oscillation of 3 GHz, or better.
    Type: Application
    Filed: September 8, 2006
    Publication date: April 1, 2010
    Inventors: Zhenqiang Ma, Hao-Chih Yuan, Guogong Wang
  • HIGH-POWER COMMON-BASE AMPLIFIER EMPLOYING CURRENT SOURCE OUTPUT BIAS
    Publication number: 20100066454
    Abstract: A common-base amplifier for a bipolar junction transistor or a heterojunction bipolar transistor employs an active current source output biasing to provide for improved power output in a power saturation region providing increased power for a given transistor area such as may be advantageous in mobile radio transmitters or the like.
    Type: Application
    Filed: September 18, 2008
    Publication date: March 18, 2010
    Inventors: Zhenqiang Ma, Guogong Wang, Guoxuan Qin
  • FRONT AND BACKSIDE PROCESSED THIN FILM ELECTRONIC DEVICES
    Publication number: 20080315253
    Abstract: This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.
    Type: Application
    Filed: March 4, 2008
    Publication date: December 25, 2008
    Inventors: Hao-Chih Yuan, Guogong Wang, Mark A. Eriksson, Paul G. Evans, Max G. Lagally, Zhenqiang Ma
  • Method for double-sided processing of thin film transistors
    Patent number: 7354809
    Abstract: This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.
    Type: Grant
    Filed: February 13, 2006
    Date of Patent: April 8, 2008
    Assignee: Wisconsin Alumi Research Foundation
    Inventors: Hao-Chih Yuan, Guogong Wang, Mark A. Eriksson, Paul G. Evans, Max G. Lagally, Zhenqiang Ma
  • METHOD FOR DOUBLE-SIDED PROCESSING OF THIN FILM TRANSISTORS
    Publication number: 20070187719
    Abstract: This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.
    Type: Application
    Filed: February 13, 2006
    Publication date: August 16, 2007
    Inventors: Hao-Chih Yuan, Guogong Wang, Mark Eriksson, Paul Evans, Max Lagally, Zhenqiang Ma