Abstract: A groove-type drying structure includes a drying groove having a cover. The drying groove is internally provided with an inner groove body. The inner groove body forms air current channels with the two sides and the bottom part of the drying groove. The upper part of the drying groove is provided with an air outlet, and the inner groove body is provided with an air compensation port. A heating device and a temperature detector are installed on the air current channels at the two sides. An air wheel is arranged in the air current channel at the bottom part, an air inlet of the air wheel is communicated with an inner chamber of the inner groove body, and a rotating shaft of the air wheel is connected with a motor installed in the bottom part of the drying groove.

Abstract: A monocrystal and polycrystal texturing device includes a device body, various stations arranged in the device body, a transmission device and a control system. The various stations are respectively a dipping acid texturing station, a spray washing station, a drying station, a spray alkali texturing station, a spray washing station, a dipping acid treatment station, a spray washing station, an acid treatment station, a spray washing station and a drying station arranged in sequence. The transmission device is for transmitting a silicon wafer to each station in sequence. The spray alkali texturing station is also connected with a heating device. The control system controls the working status of each station and the heating device. The technology of the present invention has the advantages of stable operation, high efficiency and reliability, and can conduct seamless switching among polycrystal acid texturing, monocrystal alkali texturing, monocrystal acid texturing, and monocrystal alkali texturing.

Abstract: A monocrystal and polycrystal texturing method, includes: 1: placing a silicon wafer in an acid liquid, where the acid liquid reacts with the surface of the silicon wafer to conduct acid corrosion; 2: washing the silicon wafer after acid corrosion by water and then drying the silicon wafer; 3: uniformly spreading an alkali liquid on the silicon wafer, where the alkali liquid reacts with the surface of the silicon wafer to conduct alkali corrosion; 4: washing the silicon wafer after alkali corrosion by water; 5: placing the silicon wafer in alkali solution for alkali washing; 6: washing the silicon wafer by water; 7: washing the silicon wafer by acid solution; and 8: washing the silicon after acid washing by water and then drying the silicon wafer. Steps 1 to 8 are conducted during monocrystal texturing, and steps 1 to 2 and steps 5 to 8 are conducted during polycrystal texturing.

Abstract: A monocrystal and polycrystal texturing device includes a device body, various stations arranged in the device body, a transmission device and a control system. The various stations are respectively a dipping acid texturing station, a spray washing station, a drying station, a spray alkali texturing station, a spray washing station, a dipping acid treatment station, a spray washing station, an acid treatment station, a spray washing station and a drying station arranged in sequence. The transmission device is for transmitting a silicon wafer to each station in sequence. The spray alkali texturing station is also connected with a heating device. The control system controls the working status of each station and the heating device. The technology of the present invention has the advantages of stable operation, high efficiency and reliability, and can conduct seamless switching among polycrystal acid texturing, monocrystal alkali texturing, monocrystal acid texturing, and monocrystal alkali texturing.

Abstract: A monocrystal and polycrystal texturing method, includes: 1: placing a silicon wafer in an acid liquid, where the acid liquid reacts with the surface of the silicon wafer to conduct acid corrosion; 2: washing the silicon wafer after acid corrosion by water and then drying the silicon wafer; 3: uniformly spreading an alkali liquid on the silicon wafer, where the alkali liquid reacts with the surface of the silicon wafer to conduct alkali corrosion; 4: washing the silicon wafer after alkali corrosion by water; 5: placing the silicon wafer in alkali solution for alkali washing; 6: washing the silicon wafer by water; 7: washing the silicon wafer by acid solution; and 8: washing the silicon after acid washing by water and then drying the silicon wafer. Steps 1 to 8 are conducted during monocrystal texturing, and steps 1 to 2 and steps 5 to 8 are conducted during polycrystal texturing.

Abstract: A groove-type drying structure includes a drying groove having a cover. The drying groove is internally provided with an inner groove body. The inner groove body forms air current channels with the two sides and the bottom part of the drying groove. The upper part of the drying groove is provided with an air outlet, and the inner groove body is provided with an air compensation port. A heating device and a temperature detector are installed on the air current channels at the two sides. An air wheel is arranged in the air current channel at the bottom part, an air inlet of the air wheel is communicated with an inner chamber of the inner groove body, and a rotating shaft of the air wheel is connected with a motor installed in the bottom part of the drying groove.