Abstract: The present invention discloses a manual type C-shaped wire clamp operating device, includes an insulating operating rod, wherein an upper end of the insulating operating rod is provided with a threaded rod, and the threaded rod includes an upper thread and a lower thread; a wire clamp clamping device, wherein the wire clamp clamping device includes a first spring, a wire clamp seat and a floating clamping block located above the wire clamp seat, a wire clamp seat threaded hole is formed in the wire clamp seat, the wire clamp seat threaded hole is in fit connection with the lower thread of the threaded rod; a drainage wire pressing device, wherein the drainage wire pressing device includes a guide rod arranged on the wire clamp seat and a drainage wire pressing block sliding along the guide rod, and a pressing block threaded hole is formed in the drainage wire pressing block.

Abstract: An air duct connector and an air-cooled refrigerator are provided. The air duct connector includes a first connector, a first guiding structure, a positioning structure, and a second connector. An accommodation space is formed in the first connector, and is provided with an insertion opening. The first connector is further provided with a first air opening. The first guiding structure and the positioning structure are disposed on the wall of the accommodation space. The second connector is provided with a second air opening and a second guiding structure, and is adapted to be inserted, from the insertion opening, into the accommodation space of the first connector. The first guiding structure guides the second guiding structure until the second guiding structure slides to and engages with the positioning structure, such that the second connector is positioned in the accommodation space and the first air opening is connected to the second air opening.

Abstract: A lock catch comprises: a first lock catch portion, comprising: a first housing and a first connection portion arranged in the first housing; and a second lock catch portion, comprising: a second housing, a surface of the second housing includes a first and second insert hole; a rotary draw-bar assembly arranged in the second housing and comprising a draw-bar and rotation portion arranged on the draw-bar, the rotation portion and the first insert hole arranged oppositely, one end of the draw-bar includes a second connection portion matching the first connection portion, another end of the draw-bar includes a fixed connection portion, and the second connection portion connected to the first connection portion by the rotation portion driving the draw-bar to rotate, and a fixed shaft, arranged in the second housing and opposite the second insert hole, the fixed shaft locked with the fixed connection portion by rotating a specified angle.

Abstract: A device for collecting exhalation gas and aiding measurement of a trace component in the exhalation gas and the usage method thereof are disclosed. The device comprises an alveolar air bag for storing alveolar air collected from the breath of a subject, a cavity channel air bag for storing cavity channel air from the subject, a three-way pipe, and a mouthpiece. The three-way pipe comprises a first branch pipe, second branch pipe, and third branch pipe communicating with each other. The first branch pipe and the second branch pipe respectively extend in opposing directions along the same axis. The third branch pipe extends along a radial direction of the first branch pipe and the second branch pipe. The mouthpiece communicates with the first branch pipe. An air hole of the cavity channel air bag communicates with the second branch pipe.

Abstract: A semiconductor device is provided, which includes providing an active region, a source region, a drain region, a dielectric layer, a gate structure and a nitrogen-infused dielectric layer. The source region and the drain region are formed in the active region. The dielectric layer is disposed over the source region and the drain region. The gate structure formed in the dielectric layer is positioned between the source region and the drain region. The nitrogen-infused dielectric layer is disposed over the dielectric layer and over the gate structure.

Abstract: The present invention relates to a method for fertilizing corn in a semi-humid region for one time, and belongs to the field of agricultural fertilization. The method adopts a corn seeding and fertilizing combined machine to sow and fertilize for one time in a semi-humid region. The method realizes nutrient supply throughout the growth of corn without performing top dressing in a later stage. The method improves fertilizer utilization, saves labor cost and improves production and income. The present invention effectively improves ventilation and light transmission conditions in the corn field, eliminates the effect of a stubble of a preceding crop on the emergence of corn, improves uniformity, and reduces nutrient loss.

Abstract: A semiconductor device including a silicon-on-insulator (SOI) wafer comprising a doped silicon substrate, a buried oxide layer on the doped silicon substrate, and a silicon device layer on the buried oxide layer. An inner electrode and a node dielectric layer of a capacitor are disposed in a trench of the SOI wafer. The inner electrode and the node dielectric layer penetrate through the buried oxide layer and extend into the doped silicon substrate. At least a select transistor is disposed on the buried oxide layer. The select transistor includes a source doping region and a drain doping region, a channel region between the source doping region and the drain doping region, and a gate over the channel region. At least an embedded contact is disposed atop the capacitor to electrically couple the drain doping region of the select transistor with the inner electrode of the capacitor.

Abstract: Methods of forming interconnects and structures for interconnects. A hardmask layer is patterned to form a plurality of first trenches arranged with a first pattern, and sidewall spacers are formed inside the first trenches on respective sidewalls of the hardmask layer bordering the first trenches. An etch mask is formed over the hardmask layer. The etch mask includes an opening exposing a portion of the hardmask layer between a pair of the sidewall spacers. The portion of the hardmask layer exposed by the opening in the etch mask is removed to define a second trench in the hardmask layer.

Abstract: A semiconductor device including a silicon-on-insulator (SOI) wafer comprising a doped silicon substrate, a buried oxide layer on the doped silicon substrate, and a silicon device layer on the buried oxide layer. At least a trench capacitor is disposed in a trench of the SOI wafer. The trench capacitor penetrates through the buried oxide layer and extends into the doped silicon substrate. At least a select transistor is disposed on the silicon device layer. The select transistor includes a source doping region and a drain doping region, a channel region between the source doping region and the drain doping region, and a gate over the channel region. At least an embedded contact is disposed atop the trench capacitor to electrically couple the drain doping region of the select transistor with an inner electrode of the trench capacitor.

Abstract: A semiconductor device is provided, which includes providing an active region, a source region, a drain region, a dielectric layer, a gate structure and a nitrogen-infused dielectric layer. The source region and the drain region are formed in the active region. The dielectric layer is disposed over the source region and the drain region. The gate structure formed in the dielectric layer is positioned between the source region and the drain region. The nitrogen-infused dielectric layer is disposed over the dielectric layer and over the gate structure.

Abstract: Methods of forming interconnects and structures for interconnects. A hardmask layer is patterned to form a plurality of first trenches arranged with a first pattern, and sidewall spacers are formed inside the first trenches on respective sidewalls of the hardmask layer bordering the first trenches. An etch mask is formed over the hardmask layer. The etch mask includes an opening exposing a portion of the hardmask layer between a pair of the sidewall spacers. The portion of the hardmask layer exposed by the opening in the etch mask is removed to define a second trench in the hardmask layer.

Abstract: An air duct connector and an air-cooled refrigerator are provided. The air duct connector (100) comprises a first connector (1), a first guiding structure (2), a positioning structure (3), and a second connector (4). An accommodation space (11) is formed in the first connector (1), and is provided with an insertion opening (111). The first connector (1) is further provided with a first air opening (12). The first guiding structure (2) is disposed on a wall of the accommodation space (11). The positioning structure (3) is disposed on the wall of the accommodation space (11). The second connector (4) is provided with a second air opening (41) and a second guiding structure (42), and is adapted to be inserted, from the insertion opening (111), into the accommodation space (11) of the first connector (1).

Abstract: A device for collecting exhalation gas and aiding measurement of a trace component in the exhalation gas and the usage method thereof are disclosed. The device comprises an alveolar air bag for storing alveolar air collected from the breath of a subject, a cavity channel air bag for storing cavity channel air from the subject, a three-way pipe, and a mouthpiece. The three-way pipe comprises a first branch pipe, second branch pipe, and third branch pipe communicating with each other. The first branch pipe and the second branch pipe respectively extend in opposing directions along the same axis. The third branch pipe extends along a radial direction of the first branch pipe and the second branch pipe. The mouthpiece communicates with the first branch pipe. An air hole of the cavity channel air bag communicates with the second branch pipe.

Abstract: The present disclosure provides a lock catch, a heat preservation plate assembly and a refrigerator.

Abstract: A video content item may be identified and a first indicator of a highlight occurring in the video content may also be identified. In response to identifying the first indicator of the highlight occurring in the video content item, a second indicator associated with the highlight may be identified to determine a duration of the highlight that has occurred in the video content item. Furthermore, the video content item and an identification of a location of the highlight in the video content item may be provided based on the determined duration that is associated with the second indicator.

Abstract: Disclosed are a method of forming an integrated circuit (IC) structure with robust metal plugs and the resulting IC structure. In the method, openings are formed in an interlayer dielectric layer to expose semiconductor device surfaces. The openings are lined with a two-layer liner, which includes conformal metal and barrier layers, and subsequently filled with a metal layer. However, instead of waiting until after the liner is formed to perform a silicidation anneal, as is conventionally done, the silicidation anneal is performed between deposition of the two liner layers. This is particularly useful because, as determined by the inventors, performing the silicidation anneal prior to depositing the conformal barrier layer prevents the formation of microcracks in the conformal barrier layer. Prevention of such microcracks, in turn, prevents any metal from the metal layer from protruding into the area between the two liner layers and/or completely through the liner.

Abstract: Disclosed are a method of forming an integrated circuit (IC) structure with robust metal plugs and the resulting IC structure. In the method, openings are formed in an interlayer dielectric layer to expose semiconductor device surfaces. The openings are lined with a two-layer liner, which includes conformal metal and barrier layers, and subsequently filled with a metal layer. However, instead of waiting until after the liner is formed to perform a silicidation anneal, as is conventionally done, the silicidation anneal is performed between deposition of the two liner layers. This is particularly useful because, as determined by the inventors, performing the silicidation anneal prior to depositing the conformal barrier layer prevents the formation of microcracks in the conformal barrier layer. Prevention of such microcracks, in turn, prevents any metal from the metal layer from protruding into the area between the two liner layers and/or completely through the liner.

Abstract: The present invention relates to the field of medical synthesis, in particular to a preparation method for pyrrolidine-2-carboxylic acid derivatives. The present invention adopts the following technical solution: providing a compound having a structure of formula (E), wherein R is R1 or R2, R1 is C1-C6 an alkyl, benzyl, p-methoxybenzyl, or p-nitrobenzyl group, and R2 is hydrogen; R3 is a protecting group of the carboxyl group; and P1 is a protecting group on nitrogen.

Abstract: The present patent application provides a wireless drive based stage sound and light stage coordinated operation system. The system comprises a stage performance control center, a first WLAN communication unit, a second WLAN communication unit, a master control unit, a slave control unit, a first ZIGBEE communication unit, a storage unit, a second ZIGBEE communication unit, a stage light subsystem, a third ZIGBEE communication unit and a stage sound subsystem. The system can achieve centralized monitoring, unified management and synchronization control of multiple stage systems. Furthermore, it adopts the method of wireless control, which can reduce interference and improve the stage performance effect and efficiency.

Abstract: A novel process for the preparation of a fluorolactone derivative of the formula and of its acylated derivative of formula wherein R1 stands for a hydroxy protecting group is described. The acylated fluor lactones of formula V, particularly the benzoyl derivative with R1=benzyl are important precursors for the synthesis of prodrug compounds which have the potential to be potent inhibitors of the Hepatitis C Virus (HCV) NS5B polymerase.