Patents by Inventor Guoqiang JIAN
Guoqiang JIAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11932939Abstract: Apparatus for processing a substrate are provided herein. In some embodiments, a lid for a substrate processing chamber includes: a lid plate comprising an upper surface and a contoured bottom surface, the upper surface having a central opening and the contoured bottom surface having a first portion that extends downwardly and outwardly from the central opening to a peripheral portion of the lid plate and a second portion that extends radially outward along the peripheral portion of the lid plate; an upper flange extending radially outward from the lid plate; and one or more channels formed through the lid plate from the upper surface of the lid plate to the second portion of the contoured bottom surface.Type: GrantFiled: April 28, 2021Date of Patent: March 19, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Muhammad M. Rasheed, Srinivas Gandikota, Mario Dan Sanchez, Guoqiang Jian, Yixiong Yang, Deepak Jadhav, Ashutosh Agarwal
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Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate
Patent number: 11384432Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a substrate processing chamber includes: a chamber body; a chamber lid assembly having a housing enclosing a central channel that extends along a central axis and has an upper portion and a lower portion; a lid plate coupled to the housing and having a contoured bottom surface that extends downwardly and outwardly from a central opening coupled to the lower portion of the central channel to a peripheral portion of the lid plate; and a gas distribution plate disposed below the lid plate and having a plurality of apertures disposed through the gas distribution plate.Type: GrantFiled: June 9, 2015Date of Patent: July 12, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Muhammad M. Rasheed, Srinivas Gandikota, Mario Dan Sanchez, Guoqiang Jian, Yixiong Yang, Deepak Jadhav, Ashutosh Agarwal -
Patent number: 11355391Abstract: The present disclosure generally relates to methods for processing of substrates, and more particularly relates to methods for forming a metal gapfill. In one implementation, the method includes forming a metal gapfill in an opening using a multi-step process. The multi-step process includes forming a first portion of the metal gapfill, performing a sputter process to form one or more layers on one or more side walls, and growing a second portion of the metal gapfill to fill the opening with the metal gapfill. The metal gapfill formed by the multi-step process is seamless, and the one or more layers formed on the one or more side walls seal any gaps or defects between the metal gapfill and the side walls. As a result, fluids utilized in subsequent processes do not diffuse through the metal gapfill.Type: GrantFiled: February 27, 2020Date of Patent: June 7, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Xi Cen, Feiyue Ma, Kai Wu, Yu Lei, Kazuya Daito, Yi Xu, Vikash Banthia, Mei Chang, He Ren, Raymond Hoiman Hung, Yakuan Yao, Avgerinos V. Gelatos, David T. Or, Jing Zhou, Guoqiang Jian, Chi-Chou Lin, Yiming Lai, Jia Ye, Jenn-Yue Wang
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Publication number: 20210246552Abstract: Apparatus for processing a substrate are provided herein. In some embodiments, a lid for a substrate processing chamber includes: a lid plate comprising an upper surface and a contoured bottom surface, the upper surface having a central opening and the contoured bottom surface having a first portion that extends downwardly and outwardly from the central opening to a peripheral portion of the lid plate and a second portion that extends radially outward along the peripheral portion of the lid plate; an upper flange extending radially outward from the lid plate; and one or more channels formed through the lid plate from the upper surface of the lid plate to the second portion of the contoured bottom surface.Type: ApplicationFiled: April 28, 2021Publication date: August 12, 2021Inventors: Muhammad M. RASHEED, Srinivas GANDIKOTA, Mario Dan SANCHEZ, Guoqiang JIAN, Yixiong YANG, Deepak JADHAV, Ashutosh AGARWAL
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Patent number: 11018009Abstract: The present disclosure relates to a method for forming a p-metal work function nitride film having a desired p-work function on a substrate, including: adjusting one or more of a temperature of a substrate, a duration of one or more temporally separated vapor phase pulses, a ratio of a tungsten precursor to a titanium precursor, or a pressure of a reaction to tune a work function of a p-metal work function nitride film to a desired p-work function, and contacting the substrate with temporally separated vapor phase pulses of the tungsten precursor, the titanium precursor, and a reactive gas to form a p-metal work function nitride film thereon having the desired p-work function.Type: GrantFiled: April 11, 2019Date of Patent: May 25, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Guoqiang Jian, Wei Tang, Chi-Chou Lin, Paul Ma, Yixiong Yang, Mei Chang, Wenyi Liu
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Patent number: 10879081Abstract: Methods and apparatus for reducing and eliminating defects in tungsten film are disclosed herein. In the present disclosure, reducing or eliminating oxidation of a first surface of a tungsten film having a predetermined first thickness disposed upon a substrate and within a plurality of trenches is disclosed. The plurality of trenches include a predetermined depth, and a width of less than 20 nanometers. The predetermined first thickness of the tungsten film is substantially uniform throughout the plurality of trenches such that the predetermined first thickness of the tungsten film does not substantially change to a second thickness when the first surface is contacted with air or oxygen.Type: GrantFiled: November 20, 2018Date of Patent: December 29, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Guoqiang Jian, Wei Tang, Chi-Chou Lin, Paul F. Ma, Kai Wu, Vikash Banthia, Mei Chang, Jia Ye, Wenyu Zhang, Jing Zhou
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Publication number: 20200303250Abstract: The present disclosure generally relates to methods for processing of substrates, and more particularly relates to methods for forming a metal gapfill. In one implementation, the method includes forming a metal gapfill in an opening using a multi-step process. The multi-step process includes forming a first portion of the metal gapfill, performing a sputter process to form one or more layers on one or more side walls, and growing a second portion of the metal gapfill to fill the opening with the metal gapfill. The metal gapfill formed by the multi-step process is seamless, and the one or more layers formed on the one or more side walls seal any gaps or defects between the metal gapfill and the side walls. As a result, fluids utilized in subsequent processes do not diffuse through the metal gapfill.Type: ApplicationFiled: February 27, 2020Publication date: September 24, 2020Inventors: Xi CEN, Feiyue MA, Kai WU, Yu LEI, Kazuya DAITO, Yi XU, Vikash BANTHIA, Mei CHANG, He REN, Raymond Hoiman HUNG, Yakuan YAO, Avgerinos V. GELATOS, David T. OR, Jing ZHOU, Guoqiang JIAN, Chi-Chou LIN, Yiming LAI, Jia YE, Jenn-Yue WANG
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Patent number: 10755947Abstract: Processing methods comprising etching a metal nitride layer with an etchant. The etchant can be, for example, WCl5, WOCl4 or TaCl5. Methods of improving the selectivity of etch processes are also disclosed.Type: GrantFiled: May 1, 2019Date of Patent: August 25, 2020Assignee: Applied Materials, Inc.Inventors: Wenyu Zhang, Yixiong Yang, Mario D. Sanchez, Guoqiang Jian, Wei V. Tang, Paul F. Ma
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Patent number: 10643840Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. A layer is selectively formed on the second surface and defects of the layer are formed on the blocking layer. The defects are removed from the blocking layer on the first surface.Type: GrantFiled: September 12, 2018Date of Patent: May 5, 2020Assignee: Applied Materials, Inc.Inventors: Jeffrey W. Anthis, Chang Ke, Pratham Jain, Benjamin Schmiege, Guoqiang Jian, Michael S. Jackson, Lei Zhou, Paul F. Ma, Liqi Wu
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Publication number: 20190341268Abstract: Processing methods comprising etching a metal nitride layer with an etchant. The etchant can be, for example, WCl5, WOCl4 or TaCl5. Methods of improving the selectivity of etch processes are also disclosed.Type: ApplicationFiled: May 1, 2019Publication date: November 7, 2019Inventors: Wenyu Zhang, Yixiong Yang, Mario D. Sanchez, Guoqiang Jian, Wei Tang, Paul F. Ma
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Publication number: 20190326120Abstract: The present disclosure relates to a method for forming a p-metal work function nitride film having a desired p-work function on a substrate, including: adjusting one or more of a temperature of a substrate, a duration of one or more temporally separated vapor phase pulses, a ratio of a tungsten precursor to a titanium precursor, or a pressure of a reaction to tune a work function of a p-metal work function nitride film to a desired p-work function, and contacting the substrate with temporally separated vapor phase pulses of the tungsten precursor, the titanium precursor, and a reactive gas to form a p-metal work function nitride film thereon having the desired p-work function.Type: ApplicationFiled: April 11, 2019Publication date: October 24, 2019Inventors: Guoqiang JIAN, WEI TANG, CHI-CHOU LIN, PAUL MA, YIXIONG YANG, MEI CHANG, WENYI LIU
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Publication number: 20190157102Abstract: Methods and apparatus for reducing and eliminating defects in tungsten film are disclosed herein. In the present disclosure, reducing or eliminating oxidation of a first surface of a tungsten film having a predetermined first thickness disposed upon a substrate and within a plurality of trenches is disclosed. The plurality of trenches include a predetermined depth, and a width of less than 20 nanometers. The predetermined first thickness of the tungsten film is substantially uniform throughout the plurality of trenches such that the predetermined first thickness of the tungsten film does not substantially change to a second thickness when the first surface is contacted with air or oxygen.Type: ApplicationFiled: November 20, 2018Publication date: May 23, 2019Inventors: GUOQIANG JIAN, WEI TANG, CHI-CHOU LIN, PAUL F. MA, KAI WU, VIKASH BANTHIA, MEI CHANG, JIA YE, WENYU ZHANG, JING ZHOU
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Publication number: 20190080904Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. A layer is selectively formed on the second surface and defects of the layer are formed on the blocking layer. The defects are removed from the blocking layer on the first surface.Type: ApplicationFiled: September 12, 2018Publication date: March 14, 2019Inventors: Jeffrey W. Anthis, Chang Ke, Pratham Jain, Benjamin Schmiege, Guoqiang Jian, Michael S. Jackson, Lei Zhou, Paul F. Ma, Liqi Wu
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Patent number: 10199230Abstract: Methods for selectively depositing a metal silicide layer are provided herein.Type: GrantFiled: July 2, 2015Date of Patent: February 5, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Seshadri Ganguli, Yixiong Yang, Bhushan N. Zope, Xinyu Fu, Avgerinos V. Gelatos, Guoqiang Jian, Bo Zheng
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Patent number: 9947578Abstract: Methods for forming metal contacts having tungsten liner layers are provided herein. In some embodiments, a method of processing a substrate includes: exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate; transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.Type: GrantFiled: November 22, 2016Date of Patent: April 17, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Yu Lei, Vikash Banthia, Kai Wu, Xinyu Fu, Yi Xu, Kazuya Daito, Feiyue Ma, Pulkit Agarwal, Chi-Chou Lin, Dien-Yeh Wu, Guoqiang Jian, Wei V. Tang, Jonathan Bakke, Mei Chang, Sundar Ramamurthy
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Publication number: 20170148670Abstract: Methods for forming metal contacts having tungsten liner layers are provided herein. In some embodiments, a method of processing a substrate includes: exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate; transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.Type: ApplicationFiled: November 22, 2016Publication date: May 25, 2017Inventors: YU LEI, VIKASH BANTHIA, KAI WU, XINYU FU, YI XU, KAZUYA DAITO, FEIYUE MA, PULKIT AGARWAL, CHI-CHOU LIN, DIEN-YEH WU, GUOQIANG JIAN, WEI V. TANG, JONATHAN BAKKE, MEI CHANG, SUNDAR RAMAMURTHY
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Patent number: 9595466Abstract: Methods for etching a substrate are provided herein. In some embodiments, a method for etching a substrate disposed within a processing volume of a process chamber includes: (a) exposing a first layer disposed atop the substrate to a first gas comprising tungsten chloride (WClx) for a first period of time and at a first pressure, wherein x is 5 or 6; (b) purging the processing volume of the first gas using an inert gas for a second period of time; (c) exposing the substrate to a hydrogen-containing gas for a third period of time to etch the first layer after purging the processing volume of the first gas; and (d) purging the processing volume of the hydrogen-containing gas using the inert gas for a fourth period of time.Type: GrantFiled: May 20, 2015Date of Patent: March 14, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Xinyu Fu, Srinivas Gandikota, Mei Chang, Seshadri Ganguli, Guoqiang Jian, Yixiong Yang, Vikash Banthia, Jonathan Bakke
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Publication number: 20160322229Abstract: Methods for selectively depositing a metal silicide layer are provided herein.Type: ApplicationFiled: July 2, 2015Publication date: November 3, 2016Inventors: Seshadri GANGULI, Yixiong YANG, Bhushan N. ZOPE, Xinyu FU, Avgerinos V. GELATOS, Guoqiang JIAN, Bo ZHENG
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ATOMIC LAYER DEPOSITION CHAMBER WITH FUNNEL-SHAPED GAS DISPERSION CHANNEL AND GAS DISTRIBUTION PLATE
Publication number: 20160312360Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a substrate processing chamber includes: a chamber body; a chamber lid assembly having a housing enclosing a central channel that extends along a central axis and has an upper portion and a lower portion; a lid plate coupled to the housing and having a contoured bottom surface that extends downwardly and outwardly from a central opening coupled to the lower portion of the central channel to a peripheral portion of the lid plate; and a gas distribution plate disposed below the lid plate and having a plurality of apertures disposed through the gas distribution plate.Type: ApplicationFiled: June 9, 2015Publication date: October 27, 2016Inventors: Muhammad M. RASHEED, Srinivas GANDIKOTA, Mario Dan SANCHEZ, Guoqiang JIAN, Yixiong YANG, Deepak JADHAV, Ashutosh AGARWAL -
Publication number: 20160276214Abstract: Methods for etching a substrate are provided herein. In some embodiments, a method for etching a substrate disposed within a processing volume of a process chamber includes: (a) exposing a first layer disposed atop the substrate to a first gas comprising tungsten chloride (WCIx) for a first period of time and at a first pressure, wherein x is 5 or 6; (b) purging the processing volume of the first gas using an inert gas for a second period of time; (c) exposing the substrate to a hydrogen-containing gas for a third period of time to etch the first layer after purging the processing volume of the first gas; and (d) purging the processing volume of the hydrogen-containing gas using the inert gas for a fourth period of time.Type: ApplicationFiled: May 20, 2015Publication date: September 22, 2016Inventors: Xinyu FU, Srinivas GANDIKOTA, Mei CHANG, Seshadri GANGULI, Guoqiang JIAN, Yixiong YANG, Vikash BANTHIA, Jonathan BAKKE