Patents by Inventor Guoqing Zhan

Guoqing Zhan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetoresistive random access memory with improved layout design and process thereof
    Patent number: 7910969
    Abstract: A MRAM memory and process thereof is described. A GMR magnetic layer is patterned to form a memory bit layer and an intermediate conductive layer. The intermediate conductive layer is disposed between two conductive layers such that shallow metal plugs can be utilized to interconnect the intermediate conductive layer and the conductive layers. Thus, a conventional deep tungsten plug process, interconnecting two conductive layers, is eliminated.
    Type: Grant
    Filed: August 31, 2010
    Date of Patent: March 22, 2011
    Assignee: Northern Lights Semiconductor Corp.
    Inventors: Vicki Wilson, Guoqing Zhan, James Chyi Lai
  • Magnetoresistive Random Access Memory with Improved Layout Design and Process Thereof
    Publication number: 20100320551
    Abstract: A MRAM memory and process thereof is described. A GMR magnetic layer is patterned to form a memory bit layer and an intermediate conductive layer. The intermediate conductive layer is disposed between two conductive layers such that shallow metal plugs can be utilized to interconnect the intermediate conductive layer and the conductive layers. Thus, a conventional deep tungsten plug process, interconnecting two conductive layers, is eliminated.
    Type: Application
    Filed: August 31, 2010
    Publication date: December 23, 2010
    Applicant: NORTHERN LIGHTS SEMICONDUCTOR CORP.
    Inventors: Vicki Wilson, Guoqing Zhan, James Chyi Lai
  • Interconnect for a GMR memory cells and an underlying conductive layer
    Patent number: 7816718
    Abstract: A conductive plug located in a planar dielectric layer, under GMR memory cells, are used to directly connect the lower ferromagnetic layer of one of the GMR memory cell and a conductive layer under the planar dielectric layer.
    Type: Grant
    Filed: April 3, 2009
    Date of Patent: October 19, 2010
    Assignee: Northern Lights Semiconductor Corp.
    Inventors: Vicki Wilson, Guoqing Zhan, Ray Buske, James Chyi Lai
  • Magnetoresistive random access memory with improved layout design and process thereof
    Patent number: 7807492
    Abstract: A MRAM memory and process thereof is described. A GMR magnetic layer is patterned to form a memory bit layer and an intermediate conductive layer. The intermediate conductive layer is disposed between two conductive layers such that shallow metal plugs can be utilized to interconnect the intermediate conductive layer and the conductive layers. Thus, a conventional deep tungsten plug process, interconnecting two conductive layers, is eliminated.
    Type: Grant
    Filed: September 19, 2006
    Date of Patent: October 5, 2010
    Assignee: Northern Lights Semiconductor Corp.
    Inventors: Vicki Wilson, Guoqing Zhan, James Chyi Lai
  • Interconnect For a GMR Memory Cells And An Underlying Conductive Layer
    Publication number: 20090233381
    Abstract: A conductive plug located in a planar dielectric layer, under GMR memory cells, are used to directly connect the lower ferromagnetic layer of one of the GMR memory cell and a conductive layer under the planar dielectric layer.
    Type: Application
    Filed: April 3, 2009
    Publication date: September 17, 2009
    Applicant: Northern Lights Semiconductor Corp.
    Inventors: Vicki Wilson, Guoqing Zhan, Ray Buske, James Chyi Lai
  • Interconnect connecting a diffusion metal layer and a power plane metal and fabricating method thereof
    Patent number: 7579196
    Abstract: A giant magnetoresistance (GMR) pad on the same level of GMR memory bit layer is used as an intermediate connection for plugs between the GMR pad and an underlying diffusion metal layer. A single large power metal plug is used to connect the GMR pad and the overlying power plane metal.
    Type: Grant
    Filed: September 19, 2006
    Date of Patent: August 25, 2009
    Assignee: Northern Lights Semiconductor Corp.
    Inventors: Vicki Wilson, Guoqing Zhan, Ray Buske, James Chyi Lai
  • Method and structure for contacting two adjacent GMR memory bit
    Patent number: 7396750
    Abstract: A method and a structure are provided for improving the contact of two adjacent GMR memory bits. Two adjacent bit ends are connected by utilizing a single via.
    Type: Grant
    Filed: September 19, 2006
    Date of Patent: July 8, 2008
    Assignee: Northern Lights Semiconductor Corp.
    Inventors: Vicki Wilson, Guoqing Zhan, Ray Buske, James Chyi Lai
  • Magnetoresistive Random Access Memory with Improved Layout Design and Process Thereof
    Publication number: 20070069314
    Abstract: A MRAM memory and process thereof is described. A GMR magnetic layer is patterned to form a memory bit layer and an intermediate conductive layer. The intermediate conductive layer is disposed between two conductive layers such that shallow metal plugs can be utilized to interconnect the intermediate conductive layer and the conductive layers. Thus, a conventional deep tungsten plug process, interconnecting two conductive layers, is eliminated.
    Type: Application
    Filed: September 19, 2006
    Publication date: March 29, 2007
    Applicant: NORTHERN LIGHTS SEMICONDUCTOR CORP.
    Inventors: Vicki Wilson, Guoqing Zhan, James Lai
  • Interconnect Connecting a Diffusion Metal Layer and a Power Plane Metal and Fabricating Method Thereof
    Publication number: 20070072312
    Abstract: A giant magnetoresistance (GMR) pad on the same level of GMR memory bit layer is used as an intermediate connection for plugs between the GMR pad and an underlying diffusion metal layer. A single large power metal plug is used to connect the GMR pad and the overlying power plane metal.
    Type: Application
    Filed: September 19, 2006
    Publication date: March 29, 2007
    Applicant: NORTHERN LIGHTS SEMICONDUCTOR CORP.
    Inventors: Vicki Wilson, Guoqing Zhan, Ray Buske, James Lai
  • Method and Structure for Contacting Two Adjacent GMR Memory Bit
    Publication number: 20070070555
    Abstract: A method and a structure are provided for improving the contact of two adjacent GMR memory bits. Two adjacent bit ends are connected by utilizing a single via.
    Type: Application
    Filed: September 19, 2006
    Publication date: March 29, 2007
    Applicant: Northern Lights Semiconductor Corp.
    Inventors: Vicki Wilson, Guoqing Zhan, Ray Buske, James Lai
  • Interconnect for a GMR Stack Layer and an Underlying Conducting Layer
    Publication number: 20070072311
    Abstract: Metal plugs located in a planar dielectric layer, under a GMR stack layer, are used to connect the nonmagnetic conducting layer of the GMR stack layer and a conducting layer under the planar dielectric layer.
    Type: Application
    Filed: September 19, 2006
    Publication date: March 29, 2007
    Applicant: NORTHERN LIGHTS SEMICONDUCTOR CORP.
    Inventors: Vicki Wilson, Guoqing Zhan, Ray Buske, James Lai