Abstract: Disclosed are a leadframe, a bracket and an LED device. The leadframe includes a first photo-etched metal part, having a first electrode and a chip placement layer thereon, which has a greater length for short and long edges than those of the first electrode; and a second photo-etched metal part, composed of a second electrode and a connection layer thereon, which has a greater length for short and long edges than those of the second electrode; wherein a first long edge of the chip placement layer is flush with a first long edge of the first electrode, and a first long edge of the connection layer is flush with a first long edge of the second electrode; and wherein the chip placement layer and the connection layer are provided with L-shaped pins at corners of their first long edges to cover sidewalls of the corresponding corners.

Abstract: An LED device and a bracket thereof. The bracket includes a first photo-etched metal part, composed of a first electrode and a chip placement layer stacked thereon, wherein an area of the chip placement layer is greater than an area of the first electrode; a second photo-etched metal part, composed of a second electrode and a connection layer stacked thereon; wherein a first insulation trench is provided between the first electrode and the second electrode, and a second insulation trench is provided between the chip placement layer and the connection layer. The LED device and the bracket thereof can increase the placement area for placing LED chips, thereby improving the luminance of the LED device.

Abstract: A white LED including red phosphor, at least one blue LED chip and at least one green LED chip, wherein a red light, a blue light and a green light are mixed simultaneously to produce a white light. The red phosphor comprises a first red phosphor and a second red phosphor. The first red phosphor is made from a substance having structure formula M2AX6:Mn4+, wherein the element M is selected from Li, Na, K, Rb or Cs, the element A is selected from Ti, Si, Ge or Zr, and the element X is selected from F, Cl or Br; the ratio of the second red phosphor to the red phosphor ranges from 0.01% to 15%. Further provided is a backlight module. The adjustably colored points of a device comprising M2AX6:Mn4+ are achieved by adding a second red phosphor to the red phosphor comprising M2AX6:Mn4+.

Abstract: A red luminophor, LED device and method for making the LED device. The red luminophor includes one or more materials selected from SrLiAl3N4:Eu2+, CaLiAl3N4:Eu2+, Sr4LiAl11N14:Eu2+ and Li2Ca2(Mg2Si2N6):Eu2+. The LED device includes the red luminophor. The method for making the LED device includes preparing a carrier; installing a blue LED onto the carrier; mixing the red luminophors and the transparent sealant to form a mixture; dispensing the mixture on the blue LED and the carrier to form an integration; and heating and curing the integration. The red luminophor has continuous light radiation in the wavelength range of 600 nm-750 nm, with the emission peak at 650-680 nm and the FWHM of less than 90 nm. Its emission light intensity at the wavelength of 730 nm is not less than 30% of its maximum emission light intensity, which matches the absorption needs of phytochrome of plant.

Abstract: A light emitting device, including a carrier, at least one first light-emitting diode fixed on the carrier for emitting a first color light, at least one second light-emitting diode fixed on the carrier for emitting a second color light, a first light converter coated on at least one first light-emitting diode for converting the first color light into a red light, and a second light converter coated on at least one second light-emitting diode for converting the second color light into a third color light. The first color light, the red light, the second color light and the third color light are mixed into a sunlight-like light. The light emitting device and method effectively enhance the light emission intensity of the red light, and solve the problems of the existing sunlight-like light, e.g. insufficient red light intensity or absence of red light.

Abstract: A red luminophor, LED device and method for making the LED device. The red luminophor includes one or more materials selected from SrLiAl3N4:Eu2+, CaLiAl3N4:Eu2+, Sr4LiAl11N14:Eu2+ and Li2Ca2(Mg2Si2N6):Eu2+. The LED device includes the red luminophor. The method for making the LED device includes preparing a carrier; installing a blue LED onto the carrier; mixing the red luminophors and the transparent sealant to form a mixture; dispensing the mixture on the blue LED and the carrier to form an integration; and heating and curing the integration. The red luminophor has continuous light radiation in the wavelength range of 600 nm-750 nm, with the emission peak at 650-680 nm and the FWHM of less than 90 nm. Its emission light intensity at the wavelength of 730 nm is not less than 30% of its maximum emission light intensity, which matches the absorption needs of phytochrome of plant.

Abstract: A red phosphor comprising a first red phosphor and a second red phosphor having adjustable wavelength. The first red phosphor is made from a substance having structure formula M2AX6:Mn4+, wherein the element M is selected from Li, Na, K, Rb or Cs, the element A is selected from Ti, Si, Ge or Zr, and the element X is selected from F, Cl or Br; the ratio of the second red phosphor to the red phosphor ranges from 0.01% to 15%. Further provided is a white LED and a backlight module. The adjustably colored points of a device including M2AX6:Mn4+ are achieved by adding a second red phosphor having various wavelength to the red phosphor including M2AX6:Mn4+ whose emission wavelength and spectral shape cannot be adjusted. The device can enable full range of colored points with hardly any reduction of the NTSC color gamut.

Abstract: A white LED including red phosphor, at least one blue LED chip and at least one green LED chip, wherein a red light, a blue light and a green light are mixed simultaneously to produce a white light. The red phosphor comprises a first red phosphor and a second red phosphor. The first red phosphor is made from a substance having structure formula M2AX6:Mn4+, wherein the element M is selected from Li, Na, K, Rb or Cs, the element A is selected from Ti, Si, Ge or Zr, and the element X is selected from F, Cl or Br; the ratio of the second red phosphor to the red phosphor ranges from 0.01% to 15%. Further provided is a backlight module. The adjustably colored points of a device comprising M2AX6:Mn4+ are achieved by adding a second red phosphor to the red phosphor comprising M2AX6:Mn4+.

Abstract: The present invention relates to a surface mounted LED structure of integrating functional circuits on a silicon substrate, comprising the silicon substrate and an LED chip. Said silicon substrate has an upper surface of planar structure without grooves. An oxide layer covers the upper surface of the silicon substrate, and metal electrode layers are arranged in the upper surface of the oxide layer. The upper surfaces of said metal electrode layers are arranged with metal bumps, and the LED chip is flip-chip mounted to the silicon substrate. Two conductive metal pads are arranged on the lower surface of said silicon substrate, said conductive metal pads are electrically connected to the metal electrode layers on the upper surface of the silicon substrate by a metal lead arranged on the side wall of the silicon substrate. A heat conduction metal pad is arranged on the corresponding lower, surface of the silicon substrate just below the LED chip.

Abstract: A surface mounted LED packaging structure based on a silicon substrate includes the silicon substrate, an LED chip, an annular convex wall and a lens. The silicon substrate has an upper surface of planar structure and without grooves. An oxide layer covers the upper surface of the silicon substrate. Metal electrode layers are arranged in the upper surface of the oxide layer, and the upper surfaces of the metal electrode layers are arranged with metal bumps. Vias through the silicon substrate are provided under the metal electrode layers. An insulating layer covers the inner wall of the vias and a part of the lower surface of the silicon substrate. A metal connection layer covers the insulating layer surface within the vias. Two conductive metal pads are respectively arranged under the lower surface of the silicon substrate and insulated from the silicon substrate. A heat conduction metal pad is arranged on the lower surface of the silicon substrate. The LED chip is flip-chip mounted on the silicon substrate.

Abstract: The present invention relates to an LED packaging structure and packaging method. Said packaging structure includes a substrate, an LED chip, one or more convex walls and a colloid lens shaped by the restriction of the convex walls. Said convex walls are arranged on the substrate, at least one LED chip is arranged on the substrate within an area surrounded by the convex walls, and the colloid lens enclosing the LED chip is arranged within the area surrounded by the convex walls. The colloid lens is formed with desired colloid shape by placing a liquid colloid within the area confined by the convex walls and utilizing surface tension of the liquid, and is cured. Compared to prior art, the LED packaging structure of the present invention is simple and reasonable, with simple production process and lower costs.

Abstract: The present invention relates to a surface mounted LED structure of integrating functional circuits on a silicon substrate, comprising the silicon substrate and an LED chip. Said silicon substrate has an upper surface of planar structure without grooves. An oxide layer covers the upper surface of the silicon substrate, and metal electrode layers are arranged in the upper surface of the oxide layer. The upper surfaces of said metal electrode layers are arranged with metal bumps, and the LED chip is flip-chip mounted to the silicon substrate. Two conductive metal pads are arranged on the lower surface of said silicon substrate, said conductive metal pads are electrically connected to the metal electrode layers on the upper surface of the silicon substrate by a metal lead arranged on the side wall of the silicon substrate. A heat conduction metal pad is arranged on the corresponding lower, surface of the silicon substrate just below the LED chip.

Abstract: The present invention relates to a light emitting device using AC, comprising: at least one LED chip and an AC driving circuit chip, wherein the AC driving circuit chip comprises a substrate and a rectifying circuit integrated on the substrate. The LED chip is flipped and bonded on the AC driving circuit chip by flip-chip technology and electrically connected to the rectifying circuit, and the AC driving circuit chip converts the AC into DC for supply to the LED chip. The present invention further relates to a method of manufacturing the light emitting device using AC, comprising the following steps of: (1) forming an LED chip; (2) integrating a rectifying circuit on a substrate, forming two power source connecting terminals on the substrate, and forming an AC driving circuit chip; and (3) flip-chip bonding the LED chip on the AC driving circuit chip and in electrical connection with the rectifying circuit on the substrate.

Abstract: A series of improved processes and methods to manufacture solder bumps on the wafer which shrink the space among solder bumps and reduce the cost of manufacturing. A design method and a relevant manufacturing process are introduced to form an organic material or metal material layer, which is called a Bump-Reflow-Control Layer. The pad patterns can be defined by this method. A mechanical part is designed with a hermetic cover to improve the photoresist process. The series of photolithography process including the designing method of related photolithography mask is introduced to achieve the high quality and thick photoresist.

Abstract: A method for the fine-pitch stencil mask design for stencil printing bumping technology for eutectic Sn/Pb and lead-free solder material is described. In the method, a reflowing enhancement layer is introduced to improve the solder quality and reduce the pitch of solder bumps. The method of forming the layer is described as well as the forming method of matching under-bump metallurgy layer. The method of stencil mask design can match various sizes and pitch of the solder bumps. The designed mask is fixed on the stencil printer to deposit the solder materials with the required patterns. This method can increase the solder paste volume to increase the height of solder bumps after the reflowing process.