Abstract: The present invention discloses an improved method for detecting an analyte. The present invention may be used for sensing devices which have a higher sensitivity and which can be used to detect very low concentration of analyte. In one embodiment, the method comprises the steps of providing a substrate, said substrate comprising a conductive region and a recognition layer, said conductive region having at least a first surface and a second surface, wherein said first surface is operatively associated with said recognition layer; subjecting said substrate to said analyte such that an interaction occurs between said analyte and said recognition layer; directing radiation through said substrate such that said radiation incidents on said conductive region and said recognition layer; and measuring the intensity of said radiation absorbed or transmitted by said substrate as a function of the wavelength in order to determine the presence of an analyte.

Abstract: The present invention is related to the localised/patterned deposition and/or desorption of (bio)molecules using microelectronic structures. Often pre-existing structures needed for proper functioning of the device (e.g. sensors, . . . ) can be used as individually addressable control structures to achieve localised deposition through thermal and/or electrochemical spotting, thereby reducing the need for and simplifying additional processing steps to achieve localised/patterned deposition. If these multi-purpose structures are not available, additional control structures can be implemented, using microelectronic VLSI production technology.

Abstract: The present invention is related to a device comprising a substrate comprising a silicon substrate having a porous top layer, a second layer on said top layer, said second layer made of a material comprising Ge, and a further layer of a Group III-nitride material on the second layer. The present invention further is related to methods of production and to intermediate or template devices highly suitable for the epitaxial growth of a high quality Group III-nitride layer.

Abstract: A method is disclosed for producing Group III-N field-effect devices, such as HEMT, MOSHFET, MISHFET or MESFET devices, comprising two active layers, e.g. a GaN/AlGaN layer. The method produces an enhancement mode device of this type, i.e. a normally-off device, by providing a passivation layer on the AlGaN layer, etching a hole in the passivation layer and not in the layers underlying the passivation layer, and depositing the gate contact in the hole, while the source and drain are deposited directly on the passivation layer. The characteristics of the active layers and/or of the gate are chosen such that no two-dimensional electron gas layer is present underneath the gate, when a zero voltage is applied to the gate. A device with this behavior is also disclosed.

Abstract: A device emits radiation at a predetermined wavelength. The device includes a light-emitting structure which generates the radiation. The device further includes at least one reflective edge in radiative communication with the light-emitting structure, the reflective edge having a dielectric portion. The device further includes at least one electrical contact extending through the dielectric portion of the reflective edge, the contact in electrical communication with the light-emitting structure.

Abstract: Certain inventive aspects provide local field imaging with high spatial, time and field resolution by using an array of Hall effect sensors that can be individually read out. The design combines semiconductor Hall sensors and switches that isolate the addressed Hall sensor from the rest of the array. The compact design allows for large and very dense Hall sensor arrays that can be read out in a straightforward way.

Abstract: A water soluble functional polyethylene glycol-grafted polysiloxane polymer comprising a polysiloxane backbone and polyethylene glycol side chains is provided having the general formula: wherein A is selected from the group consisting of hydrogen, methyl, methoxy and functional polyethylene glycol based chains, B is a functional group for binding biologically-sensitive materials, D is a functional group for binding to a substrate, m is from 3 to 5, v is from 0 to 5, w is from 4 to 11, x is from 0 to 35 and z is from 1 to 33. In order to be water soluble, the polysiloxane polymer h the following properties: x+y+z is from 8 to 40, n is from 8 to 30, and y is from 7 to 35.

Abstract: The present invention is related to a device comprising a substrate comprising a silicon substrate having a porous top layer, a second layer on said top layer, said second layer made of a material comprising Ge, and a further layer of a Group III-nitride material on the second layer. The present invention further is related to methods of production and to intermediate or template devices highly suitable for the epitaxial growth of a high quality Group III-nitride layer.

Abstract: A device emits radiation at a predetermined wavelength. The device includes a light-emitting diode (LED) which generates the radiation. The device further includes at least one edge having a substantially random diffraction grating structure in radiative communication with the LED.

Abstract: A sensing device and method of making and using the sensing device. The device comprises a sensing gate layer of multifunctional organic sensing molecules having at least one functional group that binds to the semiconductor layer and at least another functional group that serves as a sensor. The device further comprises a semiconductor channel layer, a drain electrode, a source electrode, and a biasing gate. The source and drain electrodes and biasing gate are situated on the same side of the device and simultaneously on the opposite side of the sensing gate layer. The sensing gate layer may be directly in contact with the intermediate layer or the semiconductor channel layer.

Abstract: A method of texturing a surface of a substrate, includes providing a substrate, and distributing separate particles of an overlayer material in a substantially random pattern over at least a part of a surface of the substrate. The substantially random pattern of separate particles is used as a mask for a subsequent processing of the substrate.

Abstract: A device for emitting radiation at a predetermined wavelength is disclosed. The device has a cavity comprising a first bulk region and a second bulk region of opposite conductivity type wherein a barrier is provided for spatially separating the charge carriers of the first and the second region substantially at the antinode of the standing wave pattern of said cavity. The recombination of the charge carriers at the barrier create radiation, the emission wavelength of the radiation being determined by the cavity.

Abstract: It is an object of the present invention to disclose a socket that is easy in use for optoelectrical interconnection. The socket of the invention can be handled as a compact device that allows the interconnection between electrical signals and external apparatus for transmitting the optical signals, preferably via a high density of optical channels. The socket of the invention has features and markers for attachment and alignment of optical transfer media such as optical fibers, optical fiber bundles and optical imaging fiber bundles. The alignment features and markers allow to align the optical transfer media to the connection for electrical signals. The markers can be integrated in or can be provided on a fiber optic face plate substrate forming part of the socket.

Abstract: The present invention relates to radiation, preferably light emitting, devices with a high radiation emission efficiency and to fabricating these as small devices in an array of such devices. In one embodiment, the emitting devices can be placed in dense arrays. In another embodiment, outcoupling efficiency of the devices is improved, which leads to a reduced power consumption for a given radiation output power. In another embodiment, the speed of the radiation is increased, hence the serial bandwidth per optical channel is increased. The invention further relates to light emitting devices that exhibit uniform radiation emission characteristics.

Abstract: A device for emitting radiation at a predetermined wavelength is presented. This device has a cavity with an active layer in which said radiation is generated by charge carrier recombination. The edges of the device define the region or space for radiation and/or charge carrier confinement. At least one of the edges of this cavity has a substantially random grating structure. The edge of the device has substantially random grating structure and can extend as at least one edge of a waveguide forming part of this radiation emitting device. The radiation emitting device of the present invention can have a cavity comprising a radiation confinement space that includes confinement features for the charge carriers confining the charge carriers to a subspace being smaller than the radiation confinement space within the cavity. The emitting device can comprise at least two edges forming, in cross-section, a substantially triangular shape. The angle between these two edges is smaller than 45°.

Abstract: It is an object of the present invention to disclose a socket that is easy in use for optoelectrical interconnection. The socket of the invention can be handled as a compact device that allows the interconnection between electrical signals and external apparatus for transmitting the optical signals, preferably via a high density of optical channels.

Abstract: A device for emitting radiation at a predetermined wavelength is disclosed. The device has a cavity comprising a first bulk region and a second bulk region of opposite conductivity type wherein a barrier is provided for spatially separating the charge carriers of the first and the second region substantially at the antinode of the standing wave pattern of said cavity. The recombination of the charge carriers at the barrier create radiation, the emission wavelength of the radiation being determined by the cavity.

Abstract: It is an object of the present invention to disclose a socket that is easy in use for optoelectrical interconnection. The socket of the invention can be handled as a compact device that allows the interconnection between electrical signals and external apparatus for transmitting the optical signals, preferably via a high density of optical channels. The socket of the invention has features and markers for attachment and alignment of optical transfer media such as optical fibers, optical fiber bundles and optical imaging fiber bundles. The alignment features and markers allow to align the optical transfer media to the connection for electrical signals. The markers can be integrated in or can be provided on a fiber optic face plate substrate forming part of the socket.

Abstract: A device for emitting radiation it a predetermined wavelength is disclosed. The device has a cavity comprising a first bulk region and a second bulk region of opposite conductivity type wherein a barrier is provided for spatially separating the charge carriers of the first and the second region substantially at the antinode of the standing wave pattern of said cavity. The recombination of the charge carriers at the barrier create radiation, the emission wavelength of the radiation being determined by the cavity.

Abstract: A method of forming refractive microlenses which includes the steps of depositing or growing a first transparent layer on a substrate; depositing or growing a second transparent layer on the first transparent layer; forming a columnar structure in the second transparent layer; forming a pillar in the first transparent layer using the columnar structure as a mask, whereby the pillar is self-aligned under the columnar structure and the pillar has a cross-sectional area smaller than or equal to the cross-sectional area of the columnar structure; thereafter reflowing the second transparent layer of the columnar structure while the pillar remains essentially unaltered, whereby a structure is formed on top of the pillar, the structure having a ground plane with an area smaller than or equal to the original cross-sectional area of the columnar structure; and solidifying said structure.