Abstract: An apparatus arranged to analyze a multi-layer optical material structure, the apparatus constituted of: a control unit, a light source outputting light; and a light receiver arranged to receive the light from the light source after interaction with the target structure, the control unit arranged to: detect the amplitude of the received light as a function of wavelength; perform a transform of a function of the detected amplitudes to the optical thickness domain; determine, responsive to a planned composition of the target multi-layer structure, optical thickness and amplitude of expected peaks of the performed transform to the optical thickness domain which correspond with interactions with single interface between layers; identify actual peaks of the performed transform to the optical thickness domain which correspond with interfaces between layers; and determine at least one physical characteristic of the target structure responsive to the determined peaks.

Abstract: An apparatus arranged to analyze a multi-layer optical material structure, the apparatus constituted of: a control unit, a light source outputting light; and a light receiver arranged to receive the light from the light source after interaction with the target structure, the control unit arranged to: detect the amplitude of the received light as a function of wavelength; perform a transform of a function of the detected amplitudes to the optical thickness domain; determine, responsive to a planned composition of the target multi-layer structure, optical thickness and amplitude of expected peaks of the performed transform to the optical thickness domain which correspond with interactions with single interface between layers; identify actual peaks of the performed transform to the optical thickness domain which correspond with interfaces between layers; and determine at least one physical characteristic of the target structure responsive to the determined peaks.

Abstract: A device and method are presented for adjusting Quadrupole Stigmation Magnetic Lenses of scanning electron microscope systems and for similar systems requiring high resolution particle beams. The ohmic characteristics of MOSFET devices are changed by electronic commands to calibrate particle beams, with the benefit that the calibration may be performed automatically and remotely. Automatic electronic particle beam adjustment provides flexibility by allowing a system to be universally available for different types of specimens under test requiring inspection under different aperture and acceleration voltages. Additionally, transistors provide a solution to applications which require low resistance remote control where devices such as programmable resistors or potentiometers are problematic.