Patents by Inventor Guy F. Ruse

Guy F. Ruse has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5634260
    Abstract: An improved magnetoresistive device and method for fabricating the same which results in improved Barkhausen noise suppression. A generally coplanar device is described having an MR structure conductive region longitudinally biased by opposing permanent magnet layers separated therefrom by a non-magnetic metal or dielectric separation layer. Significant reduction of the demagnetization energy near the MR-to-permanent magnet junction is achieved, particularly in the use of an elliptically shaped conductive region and the resultant generally coplanar device is readily fabricated and reproducible using a self-aligning process. The longitudinal bias technique described can be used in conjunction with all known transverse bias techniques.
    Type: Grant
    Filed: February 22, 1995
    Date of Patent: June 3, 1997
    Assignee: Quantum Peripherals Colorado, Inc.
    Inventors: James L. Nix, Guy F. Ruse, Paul D. Reinholz, Anthony C. Helms, Daniel J. O'Connor
  • Patent number: 5573809
    Abstract: A soft adjacent layer biased magnetoresistive ("MR") device, and a method for producing the same, which incorporates a natural flux closure design utilizing coplanar thin film permanent magnets to stabilize the device while obviating induced domain walls in the magnetoresistive and soft adjacent layers ("SAL"). The device structure includes an SAL film and overlying magnetic spacer layer ("MSL") in conjunction with an MR film to produce an SAL biased magnetoresistive structure ("MRS") with the MR layer patterned to a shortened length with respect to the SAL and MSL layers. A non-magnetic metal or dielectric separation layer of on the order of 20-300 angstroms (".ANG.") is then deposited over the MSL layer and the sides of the MR layer followed by the deposition of permanent magnet layer portions substantially coplanar with the MR layer to produce a low energy equilibria device with high sensitivity and superior signal output.
    Type: Grant
    Filed: June 5, 1995
    Date of Patent: November 12, 1996
    Assignee: Quantum Peripherals Colorado, Inc.
    Inventors: J. Lamar Nix, Guy F. Ruse
  • Patent number: 5532892
    Abstract: A soft adjacent layer biased magnetoresistive ("MR") device, and a method for producing the same, which incorporates a natural flux closure design utilizing coplanar thin film permanent magnets to stabilize the device while obviating induced domain walls in the magnetoresistive and soft adjacent layers ("SAL"). The device structure includes an SAL film and overlying magnetic spacer layer ("MSL") in conjunction with an MR film to produce an SAL biased magnetoresistive structure ("MRS") with the MR layer patterned to a shortened length with respect to the SAL and MSL layers. A non-magnetic metal or dielectric separation layer of on the order of 20-300 angstroms (".ANG.") is then deposited over the MSL layer and the sides of the MR layer followed by the deposition of permanent magnet layer portions substantially coplanar with the MR layer to produce a low energy equilibria device with high sensitivity and superior signal output.
    Type: Grant
    Filed: June 5, 1995
    Date of Patent: July 2, 1996
    Assignee: Quantum Peripherals Colorado, Inc.
    Inventors: J. Lamar Nix, Guy F. Ruse
  • Patent number: 5485334
    Abstract: An improved magnetoresistive device and method for fabricating the same which results in improved Barkhausen noise suppression. A generally coplanar device is described having an MR structure conductive region longitudinally biased by opposing permanent magnet layers separated therefrom by a non-magnetic metal or dielectric separation layer. significant reduction of the demagnetization energy near the MR-to-permanent magnet junction is achieved, particularly in the use of an elliptically shaped conductive region and the resultant generally coplanar device is readily fabricated and reproducible using a self-aligning process. The longitudinal bias technique described can be used in conjunction with all known transverse bias techniques.
    Type: Grant
    Filed: February 22, 1996
    Date of Patent: January 16, 1996
    Assignee: Quantum Peripherals Colorado, Inc.
    Inventors: James L. Nix, Guy F. Ruse, Paul D. Reinholz, Anthony C. Helms, Daniel J. O'Connor
  • Patent number: 4849250
    Abstract: A method and apparatus is disclosed for permitting a plurality of substrates to be positioned within a magnetic field unique to each substrate so that the plurality of substrates may be placed in a vacuum chamber and concurrently coated with a thin film. A magnetic field unique to and associated with each substrate may be oriented so that all substrates have a uniform magnetic field and magnetic orientation. Alternatively, the magnetic field and orientation of each substrate may be individually tailored to produce a different magnetic characteristic for each substrates.
    Type: Grant
    Filed: January 27, 1988
    Date of Patent: July 18, 1989
    Assignee: Storage Technology Corporation
    Inventors: Richard H. Dee, Laurence L. Rea, Darwin D. King, Guy F. Ruse