Abstract: An image sensor comprises an array comprising rows and columns of pixels, a first number N of connection lines connected to a first number N of pixels of the array, a voltage regulating circuit having an output, a first terminal, and a driver circuit. The driver circuit has a first number N of switches coupled to the first number N of connection lines and to the output of the voltage regulating circuit, and a first number N of further switches coupled to the first number N of connection lines and to the first terminal. The first number N is at least two.

Abstract: A pixel cell includes a pixel set with a plurality of pixels, with each pixel of the pixel set being configured to capture optical information incident upon the respective pixel and generate electrical information representative of the optical information. The pixel cell further includes a readout circuit which is configured to manage collection and output of the electrical information from each pixel of the pixel set and to operate the pixel set in a global shutter mode and in a rolling shutter mode of operation. In the global shutter mode, the electrical information from each pixel is combined for generating a global shutter output signal, while in the rolling shutter mode, the electrical information from each pixel is used to generate individual rolling shutter output signals.

Abstract: An image sensor arrangement for determining a three-dimensional image comprises an image sensor comprising an array of global shutter pixels and a control unit which is configured to drive the image sensor in an imaging mode and in a time-of-flight mode. In the imaging mode, the control unit drives the pixels according to an imaging timing sequence. In the time-of-flight mode, the control unit drives the pixels according to a time-of-flight, TOF, timing sequence. At least a first subset of pixels are operated with a phase delay with respect to at least a second subset of pixels according to a first phase and a second phase, respectively.

Abstract: An image sensor system has a pixel array with a plurality of pixels, each of the pixels comprising a photodiode, a pixel buffer and a transfer gate coupled between the photodiode and an input of the pixel buffer. A voltage supply block is configured to generate a pixel supply voltage from an input voltage based on a first reference voltage and to provide the pixel supply voltage to the pixel array. A calibration processing block is configured to determine an average pixel signal based on an average of individual pixel signals at outputs of the pixels of the pixel array and to determine a correction value based on the average pixel signal and a reference pixel signal. A correction processing block is configured to determine the first reference voltage based on a combination of a second reference voltage and the correction value.

Abstract: A photodetector in semiconductor material is provided with a first transfer gate between the photodetector and a first diffusion region in the semiconductor material, a second transfer gate between the photodetector and a second diffusion region in the semiconductor material, a capacitor connected between the first diffusion region and the second diffusion region, a first switch connected between the first diffusion region and a first reference voltage, and a second switch connected between the second diffusion region and a second reference voltage.

Abstract: A photodetector in semiconductor material is provided with a first transfer gate between the photodetector and a first diffusion region in the semiconductor material, a second transfer gate between the photodetector and a second diffusion region in the semiconductor material, a capacitor connected between the first diffusion region and the second diffusion region, a first switch connected between the first diffusion region and a first reference voltage, and a second switch connected between the second diffusion region and a second reference voltage.

Abstract: The backside illuminated image sensor comprises a substrate of semiconductor material, detector elements arranged at a main surface, a dielectric layer on or above the main surface, a first capacitor layer and a second capacitor layer above the main surface, the capacitor layers forming a capacitor (C1, C2). A peripheral circuit is integrated in the substrate apart from the detector elements, the peripheral circuit being configured for one or more operations of the group consisting of voltage regulation, charge pump operation and stabilization of clock generation, and the capacitor layers are electrically connected with contact regions of the peripheral circuit.

Abstract: An image sensor system has a pixel array with a plurality of pixels, each of the pixels comprising a photodiode, a pixel buffer and a transfer gate coupled between the photodiode and an input of the pixel buffer. A voltage supply block is configured to generate a pixel supply voltage from an input voltage based on a first reference voltage and to provide the pixel supply voltage to the pixel array. A calibration processing block is configured to determine an average pixel signal based on an average of individual pixel signals at outputs of the pixels of the pixel array and to determine a correction value based on the average pixel signal and a reference pixel signal. A correction processing block is configured to determine the first reference voltage based on a combination of a second reference voltage and the correction value.

Abstract: A pixel with enhanced quantum efficiency comprises a semiconductor body that has a first surface configured as an entrance surface and a light capturing region configured for capturing light that is incident on the first surface. The pixel further comprises a structured interface, isolation layers on at least two surfaces of the semiconductor body that are perpendicular to the first surface, and a filter element that is arranged at a distance from the first surface such that light that is incident on the first surface at an angle of incidence smaller than a critical angle impinges on the filter element.

Abstract: The package comprises a carrier, an electronic device arranged on the carrier, a shield arranged on the electronic device on a side facing away from the carrier, and an absorber film comprising nanomaterial applied on or above the shield.

Abstract: The semiconductor device comprises a substrate of semiconductor material having a main surface, an integrated circuit in the substrate, a photodetector element or array of photodetector elements arranged at or above the main surface, and at least one nanomaterial film arranged above the main surface. At least part of the nanomaterial film has a scintillating property. The method of production includes the use of a solvent to apply the nanomaterial film, in particular by inject printing, by silk-screen printing, by spin coating or by spray coating.

Abstract: An image sensor comprises an array comprising rows and columns of pixels, a first number N of connection lines connected to a first number N of pixels of the array, a voltage regulating circuit having an output, a first terminal, and a driver circuit. The driver circuit has a first number N of switches coupled to the first number N of connection lines and to the output of the voltage regulating circuit, and a first number N of further switches coupled to the first number N of connection lines and to the first terminal. The first number N is at least two.

Abstract: The semiconductor image sensor device comprises a semiconductor layer having a main surface and an opposite rear surface, and a charge carrier generating component at the main surface. The charge carrier generating component is arranged between a top reflecting layer and a bottom reflecting layer, which are arranged outside the semiconductor layer.

Abstract: A pixel cell includes a pixel set with a plurality of pixels, with each pixel of the pixel set being configured to capture optical information incident upon the respective pixel and generate electrical information representative of the optical information. The pixel cell further includes a readout circuit which is configured to manage collection and output of the electrical information from each pixel of the pixel set and to operate the pixel set in a global shutter mode and in a rolling shutter mode of operation. In the global shutter mode, the electrical information from each pixel is combined for generating a global shutter output signal, while in the rolling shutter mode, the electrical information from each pixel is used to generate individual rolling shutter output signals.

Abstract: An image sensor arrangement for determining a three-dimensional image comprises an image sensor comprising an array of global shutter pixels and a control unit which is configured to drive the image sensor in an imaging mode and in a time-of-flight mode. In the imaging mode, the control unit drives the pixels according to an imaging timing sequence. In the time-of-flight mode, the control unit drives the pixels according to a time-of-flight, TOF, timing sequence. At least a first subset of pixels are operated with a phase delay with respect to at least a second subset of pixels according to a first phase and a second phase, respectively.

Abstract: A photodetector in semiconductor material is provided with a first transfer gate between the photodetector and a first diffusion region in the semiconductor material, a second transfer gate between the photodetector and a second diffusion region in the semiconductor material, a capacitor connected between the first diffusion region and the second diffusion region, a first switch connected between the first diffusion region and a first reference voltage, and a second switch connected between the second diffusion region and a second reference voltage.

Abstract: The system comprises an array of addressable light sources, which is configured for an activation of the light sources individually or in groups, an image sensor comprising pixels, which are configured for the detection of a predefined light pattern, and a rolling shutter of the image sensor. The array of addressable light sources is configured for a consecutive activation of the light sources according to the predefined light pattern or part of the predefined light pattern, and the rolling shutter is configured to expose areas of the image sensor in accordance with the activation of the light sources, so that the pixels in an exposed area are illuminated and the pixels that are outside the exposed area are shielded from illumination.

Abstract: The semiconductor image sensor device comprises a semiconductor layer having a main surface and an opposite rear surface, and a charge carrier generating component at the main surface. The charge carrier generating component is arranged between a top reflecting layer and a bottom reflecting layer, which are arranged outside the semiconductor layer.

Abstract: The package comprises a carrier, an electronic device arranged on the carrier, a shield arranged on the electronic device on a side facing away from the carrier, and an absorber film comprising nanomaterial applied on or above the shield.

Abstract: The backside illuminated image sensor comprises a substrate of semiconductor material, detector elements arranged at a main surface, a dielectric layer on or above the main surface, a first capacitor layer and a second capacitor layer above the main surface, the capacitor layers forming a capacitor (C1, C2). A peripheral circuit is integrated in the substrate apart from the detector elements, the peripheral circuit being configured for one or more operations of the group consisting of voltage regulation, charge pump operation and stabilization of clock generation, and the capacitor layers are electrically connected with contact regions of the peripheral circuit.