Patents by Inventor Gwang-Ha Na

Gwang-Ha Na has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10385472
    Abstract: The embodiments of the present invention provides a diameter controlling system of the single crystal ingot for controlling a diameter deviation of a silicon ingot during the growth of silicon ingot by a Czochralski method, it may include a seed chuck for supporting a silicon ingot combined with a seed crystal and grown; a measuring part connected to an upper surface of the seed chuck with a cable and configured to measure a load applied to the seed chuck; a load adjusting part for moving a position of the seed chuck vertically while the seed chuck is connected to the cable to change a load applied to the silicon ingot; and a controlling part for controlling the load applied to the silicon ingot by driving the load adjusting part according to the load value measured from the measuring part. Therefore, shaking of the seed during the growth process of the single crystal ingot is prevented, and thus the diameter deviation of the growing single crystal ingot may be reduced.
    Type: Grant
    Filed: December 31, 2015
    Date of Patent: August 20, 2019
    Assignee: SK Siltron Co., Ltd.
    Inventors: Yun-Goo Kim, Gwang-Ha Na, Yun-Ha An
  • Publication number: 20180171507
    Abstract: The embodiments of the present invention provides a diameter controlling system of the single crystal ingot for controlling a diameter deviation of a silicon ingot during the growth of silicon ingot by a Czochralski method, it may include a seed chuck for supporting a silicon ingot combined with a seed crystal and grown; a measuring part connected to an upper surface of the seed chuck with a cable and configured to measure a load applied to the seed chuck; a load adjusting part for moving a position of the seed chuck vertically while the seed chuck is connected to the cable to change a load applied to the silicon ingot; and a controlling part for controlling the load applied to the silicon ingot by driving the load adjusting part according to the load value measured from the measuring part. Therefore, shaking of the seed during the growth process of the single crystal ingot is prevented, and thus the diameter deviation of the growing single crystal ingot may be reduced.
    Type: Application
    Filed: December 31, 2015
    Publication date: June 21, 2018
    Inventors: Yun-Goo KIM, Gwang-Ha NA, Yun-Ha AN
  • Patent number: 9994969
    Abstract: A view port for observing ingot growth process of the present embodiment is as a view port for observing the inside of a chamber providing a space in which a growth process of an ingot is performed includes a body part disposed on the a side of the chamber and having a hole connected to the inside of the chamber; a window being inserted into the hole of the body part to maintain a sealing state of the chamber and through which light being transmitted from the inside of the chamber; and, a window purge being disposed on the side of the body part an forms air curtain. The view port of the present invention proposed has an advantage of prevention of the glass contamination as well as self-cleaning of the contaminated glass of the view port. The ingot that grows in the inside of the chamber may be clearly observed through such a view port and then the process condition is determined through the process data accurately observed.
    Type: Grant
    Filed: August 1, 2014
    Date of Patent: June 12, 2018
    Assignee: SK Siltron Co., Ltd.
    Inventors: Seong-Hyeok Kim, Gwang-Ha Na, Hyun-Su Jang
  • Publication number: 20160319458
    Abstract: A view port for observing ingot growth process of the present embodiment is as a view port for observing the inside of a chamber providing a space in which a growth process of an ingot is performed includes a body part disposed on the a side of the chamber and having a hole connected to the inside of the chamber; a window being inserted into the hole of the body part to maintain a sealing state of the chamber and through which light being transmitted from the inside of the chamber; and, a window purge being disposed on the side of the body part an forms air curtain. The view port of the present invention proposed has an advantage of prevention of the glass contamination as well as self-cleaning of the contaminated glass of the view port. The ingot that grows in the inside of the chamber may be clearly observed through such a view port and then the process condition is determined through the process data accurately observed.
    Type: Application
    Filed: August 1, 2014
    Publication date: November 3, 2016
    Applicant: LGSILTRON INC.
    Inventors: Seong-Hyeok KIM, Gwang-Ha NA, Hyun-Su JANG
  • Publication number: 20120000416
    Abstract: Provided are a single crystal cooling apparatus and a single crystal grower including the same. The single crystal cooling apparatus includes an upper flange having a circular shape and a lower flange extending downward from the upper flange, the lower flange having a diameter less than that of the upper flange.
    Type: Application
    Filed: March 2, 2011
    Publication date: January 5, 2012
    Inventors: Hak-Eui Wang, Gwang-Ha Na