Abstract: A method according to an embodiment is for recovering a valuable metal from a waste electrode material of a lithium secondary battery by using lithium carbonate. An anode-cathode mixed electrode material that has been separated by draining, crushing, screening, and sorting a waste lithium secondary battery is preprocessed. A precipitation operation performed by adding lithium carbonate (Li2CO3) to a metal melt acquired by performing sulfuric acid dissolution using sulfuric acid. A valuable metal such as nickel, cobalt, manganese, aluminum, and copper is recovered as a residue in the form of a carbonate composite, and a lithium sulfate (Li2SO4) aqueous solution including lithium is recovered as a filtrate.

Abstract: A semiconductor package includes a first semiconductor chip including a first through-silicon via (TSV), a second semiconductor chip stacked on the first semiconductor chip and including a second TSV, and a non-conductive film formed between the first semiconductor chip and the second semiconductor chip. The non-conductive film includes two layers having different viscosities.

Abstract: A semiconductor package includes a first semiconductor chip including a first through-silicon via (TSV), a second semiconductor chip stacked on the first semiconductor chip and including a second TSV, and a non-conductive film formed between the first semiconductor chip and the second semiconductor chip. The non-conductive film includes two layers having different viscosities.

Abstract: A semiconductor package includes a first semiconductor chip including a first through-silicon via (TSV), a second semiconductor chip stacked on the first semiconductor chip and including a second TSV, and a non-conductive film formed between the first semiconductor chip and the second semiconductor chip. The non-conductive film includes two layers having different viscosities.

Abstract: A semiconductor package includes a substrate, a plurality of semiconductor chips stacked on the substrate, and a plurality of bonding layers bonded to lower surfaces of the plurality of semiconductor chips. The plurality of bonding layers may be divided into a plurality of groups, each having different physical properties depending on a distance from the substrate.

Abstract: A semiconductor package includes a first semiconductor chip including a first through-silicon via (TSV), a second semiconductor chip stacked on the first semiconductor chip and including a second TSV, and a non-conductive film formed between the first semiconductor chip and the second semiconductor chip. The non-conductive film includes two layers having different viscosities.

Abstract: A semiconductor package includes a substrate, a plurality of semiconductor chips stacked on the substrate, and a plurality of bonding layers bonded to lower surfaces of the plurality of semiconductor chips. The plurality of bonding layers may be divided into a plurality of groups, each having different physical properties depending on a distance from the substrate.