Abstract: Embodiments of substrate supports and process chambers equipped with the same are provided. In some embodiments, a substrate support includes: a support body having a first surface; one or more receptacles extending through the first surface and into the support body; and one or more protrusions respectively disposed within corresponding ones of the one or more receptacles and projecting from the first surface, wherein the one or more protrusions at least partially define a substantially planar support surface above the first surface. Methods of eliminating backside wafer damage are also disclosed.

Abstract: Embodiments of lift pin assemblies and substrate supports having such lift pin assemblies are provided herein. In some embodiments, a lift pin assembly includes a body with a first end including a flange and an opposing second end; a bore through the body from the first end to the second end; a profile on an outer surface proximate a second end; and a collar, wherein the profile is configured to removably lock the collar onto the second end.

Abstract: Apparatus for improving substrate temperature uniformity in a substrate processing chamber are provided herein. In some embodiments, a substrate support processing chamber may include a chamber body having a bottom portion and a sidewall having a slit valve opening to load and unload substrates, a pin lift mechanism, disposed in a pin lift mechanism opening formed in the bottom portion of the chamber body, having a plurality of substrate support pins coupled to the pin lift mechanism, a movable substrate support heater having substrate support portion and a shaft, and a cover plate disposed about the shaft of the movable substrate support, wherein the cover plate covers the pin lift mechanism and pin lift mechanism opening.

Abstract: Embodiments of the disclosure generally relate to apparatuses for processing substrates. In one embodiment, a substrate processing system is provided and includes a lid having an upper lid surface opposed to a lower lid surface, a plurality of gas inlet passages extending from the upper lid surface to the lower lid surface, a gas manifold disposed on the lid, at least one valve coupled with the gas manifold and configured to control a gas flow through one of the gas inlet passages, wherein the at least one valve is configured to provide an open and close cycle having a time period of less than about 1 second during a gas delivery cycle for enabling an atomic layer deposition process. The substrate processing system further contains a gas reservoir fluidly connected between the gas manifold and at least one precursor source.

Abstract: Embodiments of substrate supports and process chambers equipped with the same are provided. In some embodiments, a substrate support includes: a support body having a first surface; one or more receptacles extending through the first surface and into the support body; and one or more protrusions respectively disposed within corresponding ones of the one or more receptacles and projecting from the first surface, wherein the one or more protrusions at least partially define a substantially planar support surface above the first surface. Methods of eliminating backside wafer damage are also disclosed.

Abstract: Apparatus for improving substrate temperature uniformity in a substrate processing chamber are provided herein. In some embodiments, a substrate support processing chamber may include a chamber body having a bottom portion and a sidewall having a slit valve opening to load and unload substrates, a pin lift mechanism, disposed in a pin lift mechanism opening formed in the bottom portion of the chamber body, having a plurality of substrate support pins coupled to the pin lift mechanism, a movable substrate support heater having substrate support portion and a shaft, and a cover plate disposed about the shaft of the movable substrate support, wherein the cover plate covers the pin lift mechanism and pin lift mechanism opening.

Abstract: Apparatus for improving substrate temperature uniformity in a substrate processing chamber are provided herein. In some embodiments, a substrate support processing chamber may include a chamber body having a bottom portion and a sidewall having a slit valve opening to load and unload substrates, a pin lift mechanism, disposed in a pin lift mechanism opening formed in the bottom portion of the chamber body, having a plurality of substrate support pins coupled to the pin lift mechanism, a movable substrate support heater having substrate support portion and a shaft, and a cover plate disposed about the shaft of the movable substrate support, wherein the cover plate covers the pin lift mechanism and pin lift mechanism opening.

Abstract: Embodiments of substrate supports and sealing rings for use in a substrate support are provided herein. In some embodiments, a substrate support structure includes an arcuate sealing piece having a first side including a generally planar support surface; a first arcuate portion; a second arcuate portion disposed radially inward of the first arcuate portion; a first end portion comprising a first arcuate extension extending from the first arcuate portion; and a second end portion comprising a second arcuate extension extending from the second arcuate portion.

Abstract: In some embodiments, an apparatus for variable substrate temperature control may include a heater moveable along a central axis of a substrate support; a seal ring disposed about the heater, the seal ring configured to interface with a shadow ring disposed above the heater to form a seal; a plurality of spacer pins configured to support a substrate and disposed within a plurality of through holes formed in the heater, the plurality of spacer pins moveable parallel to the central axis, wherein the plurality of spacer pins control a first distance between the substrate and the heater and a second distance between the substrate and the shadow ring; and a resilient element disposed beneath the seal ring to bias the seal ring toward a backside surface of the heater.

Abstract: Embodiments of the disclosure generally relate to apparatuses for processing substrates. In one embodiment, a substrate processing system is provided and includes a lid having an upper lid surface opposed to a lower lid surface, a plurality of gas inlet passages extending from the upper lid surface to the lower lid surface, a gas manifold disposed on the lid, at least one valve coupled with the gas manifold and configured to control a gas flow through one of the gas inlet passages, wherein the at least one valve is configured to provide an open and close cycle having a time period of less than about 1 second during a gas delivery cycle for enabling an atomic layer deposition process. The substrate processing system further contains a gas reservoir fluidly connected between the gas manifold and at least one precursor source.

Abstract: Substrate supports are provided herein, In some embodiments, a substrate support includes a first plate; a plurality of vacuum passages disposed through the first plate; a plurality of vertical passages formed partially into the first plate; a plurality of horizontal passages disposed in the first plate, each of the plurality of horizontal passages beginning proximate a perimeter of the first plate and terminating proximate one of the plurality of vertical passages such that the horizontal passages and the vertical passages are in fluid communication; a second plate coupled to the first plate at an interface; an elongate shaft having a vacuum line and an edge purge line internal to the shaft; a vacuum channel formed at the interface fluidly coupling the vacuum line to the plurality of vacuum passages; and an edge purge channel formed at the interface fluidly coupling the edge purge line to the plurality of vertical passages.

Abstract: Embodiments of the invention generally relate to apparatuses for processing substrates. In one embodiment, a substrate processing system is provided and includes a lid having an upper lid surface opposed to a lower lid surface, a plurality of gas inlet passages extending from the upper lid surface to the lower lid surface, a gas manifold disposed on the lid, at least one valve coupled with the gas manifold and configured to control a gas flow through one of the gas inlet passages, wherein the at least one valve is configured to provide an open and close cycle having a time period of less than about 1 second during a gas delivery cycle for enabling an atomic layer deposition process. The substrate processing system further contains a gas reservoir fluidly connected between the gas manifold and at least one precursor source.

Abstract: Embodiments of substrate supports are provided herein. In some embodiments, a substrate support may include a support plate having a support surface to support a substrate, a support ring to support a substrate at a perimeter of the support surface; and a plurality of first support elements disposed in the support ring, wherein an end portion of each of the first support elements is raised above an upper surface of the support ring to define a gap between the upper surface of the support ring and an imaginary plane disposed on the end portions of the plurality of first support elements.

Abstract: Embodiments of substrate supports are provided herein. In some embodiments, a substrate support may include a first aluminum plate for supporting a substrate, the first aluminum plate having a plurality of heating elements embedded therein to provide a plurality of heating zones; a second aluminum plate disposed beneath and supporting the first aluminum plate; a third aluminum plate disposed beneath and supporting the second aluminum plate; a non-metallic ring disposed atop the first aluminum plate; and a plurality of spacers having an upper portion disposed above a surface of the first aluminum plate, wherein the non-metallic ring and the plurality of spacers support the substrate above the first aluminum plate.

Abstract: Embodiments of substrate supports having a wire mesh plasma containment are provided herein. In some embodiments, a substrate support may include a plate comprising a first surface, an opposing second surface, a thickness bounded by the first and second surfaces, and a first perimetrical surface; a first heater element disposed between the first and second surfaces; a wire mesh disposed between the first and second surfaces; a ground connector mounted to a surface of the plate; at least one electrical connection between the wire mesh and the ground connector; and an elongate shaft comprising a first end and an opposite second end, wherein the plate second surface is mounted to the first end of the shaft.

Abstract: Apparatus for improving substrate temperature uniformity in a substrate processing chamber are provided herein. In some embodiments, a substrate support processing chamber may include a chamber body having a bottom portion and a sidewall having a slit valve opening to load and unload substrates, a pin lift mechanism, disposed in a pin lift mechanism opening formed in the bottom portion of the chamber body, having a plurality of substrate support pins coupled to the pin lift mechanism, a movable substrate support heater having substrate support portion and a shaft, and a cover plate disposed about the shaft of the movable substrate support, wherein the cover plate covers the pin lift mechanism and pin lift mechanism opening.

Abstract: A substrate support may include a body; an inner ring disposed about the body; an outer ring disposed about the inner ring forming a first opening therebetween; a first seal ring disposed above the first opening; a shadow ring disposed above the inner ring, extending inward from the outer ring and forming a second opening between the shadow and outer rings; a second seal ring disposed above the second opening; a space at least partially defined by the body and the inner, outer, first, second, and shadow rings; a first gap defined between a processing surface of a substrate when present and the shadow ring; and a plurality of second gaps fluidly coupled to the space; wherein the first gap and the plurality of second gaps are configured such that, when a substrate is present, a gas provided to the space flows out of the space through the first gap.

Abstract: Embodiments of lift pin assemblies and substrate supports having such lift pin assemblies are provided herein. In some embodiments, a lift pin assembly includes a body with a first end including a flange and an opposing second end; a bore through the body from the first end to the second end; a profile on an outer surface proximate a second end; and a collar, wherein the profile is configured to removably lock the collar onto the second end.

Abstract: Substrate supports are provided herein, In some embodiments, a substrate support includes a first plate; a plurality of vacuum passages disposed through the first plate; a plurality of vertical passages formed partially into the first plate; a plurality of horizontal passages disposed in the first plate, each of the plurality of horizontal passages beginning proximate a perimeter of the first plate and terminating proximate one of the plurality of vertical passages such that the horizontal passages and the vertical passages are in fluid communication; a second plate coupled to the first plate at an interface; an elongate shaft having a vacuum line and an edge purge line internal to the shaft; a vacuum channel formed at the interface fluidly coupling the vacuum line to the plurality of vacuum passages; and an edge purge channel formed at the interface fluidly coupling the edge purge line to the plurality of vertical passages.

Abstract: Embodiments of substrate supports and sealing rings for use in a substrate support are provided herein. In some embodiments, a substrate support structure includes an arcuate sealing piece having a first side including a generally planar support surface; a first arcuate portion; a second arcuate portion disposed radially inward of the first arcuate portion; a first end portion comprising a first arcuate extension extending from the first arcuate portion; and a second end portion comprising a second arcuate extension extending from the second arcuate portion.