Abstract: A solar cell includes a photoelectric conversion layer; and a front electrode on the photoelectric conversion layer, wherein the front electrode includes a plurality of first finger electrodes; a plurality of second finger electrodes; a bus electrode directly connected to at least one of the plurality of first finger electrodes; a plurality of connecting electrodes connected to the plurality of second finger electrodes, the plurality of connecting electrodes forming at least one space therebetween; and an auxiliary electrode formed at the at least one space, wherein the auxiliary electrode connects at least two connecting electrodes of the plurality of connecting electrodes.

Abstract: A solar cell includes a photoelectric conversion layer; and a front electrode on the photoelectric conversion layer, wherein the front electrode includes a plurality of first finger electrodes; a plurality of second finger electrodes; a bus electrode directly connected to at least one of the plurality of first finger electrodes; a plurality of connecting electrodes connected to the plurality of second finger electrodes, the plurality of connecting electrodes forming at least one space therebetween; and an auxiliary electrode formed at the at least one space, wherein the auxiliary electrode connects at least two connecting electrodes of the plurality of connecting electrodes.

Abstract: A post-processing apparatus of a solar cell that carries out a post-processing operation including a main period for heat-treating a solar cell having a semiconductor substrate while providing light to the solar cell, the post-processing apparatus including a main section to carry out the main period, wherein the main section comprises a first heat source unit to provide heat to the semiconductor substrate and a light source unit to provide light to the semiconductor substrate, the first heat source unit and the light source unit being positioned in the main section, and the light source unit comprises a light source constituted by a plasma lighting system (PLS).

Abstract: A post-processing apparatus of a solar cell carries out a post-processing operation including a main period for heat-treating a solar cell including a semiconductor substrate while providing light to the solar cell. The post-processing apparatus includes a main section to carry out the main period. The main section includes a first heat source unit to provide heat to the semiconductor substrate and a light source unit to provide light to the semiconductor substrate. The first heat source unit and the light source unit are positioned in the main section. The light source unit includes a light source constituted by a plasma lighting system (PLS).

Abstract: A solar cell includes a photoelectric conversion layer; and a front electrode on the photoelectric conversion layer, wherein the front electrode includes a plurality of first finger electrodes; a plurality of second finger electrodes; a bus electrode directly connected to at least one of the plurality of first finger electrodes; a plurality of connecting electrodes connected to the plurality of second finger electrodes, the plurality of connecting electrodes forming at least one space therebetween; and an auxiliary electrode formed at the at least one space, wherein the auxiliary electrode connects at least two connecting electrodes of the plurality of connecting electrodes.

Abstract: A method of manufacturing a solar cell is discussed. The method of manufacturing the solar cell includes: forming a conductive region on a semiconductor substrate; forming an electrode connected to the conductive region; and post-processing the semiconductor substrate to passivate the semiconductor substrate. The post-processing of the semiconductor substrate comprises a main processing process for heat-treating the semiconductor substrate while providing light to the semiconductor substrate. A temperature of the main processing process is about 100° C. to about 800° C., and the temperature and light intensity of the main processing process satisfy Equation of 1750?31.8·T+(0.16)·T2?I. Here, T is the temperate (° C.) of the main processing process, and I is the light intensity (mW/cm2) of the main processing process.

Abstract: A solar cell is discussed, which includes a pair of connecting electrodes having a portion having a width smaller than a width of a plurality of bus bar electrodes, and the pair of connecting electrodes connects a plurality of second finger electrodes to both sides of an end of one of the plurality of bus bar electrodes, respectively, wherein the end of the one of the plurality of bus bar electrodes being positioned in a second direction, wherein an area not including the plurality of second finger electrodes is positioned between the pair of connecting electrodes, and wherein an auxiliary electrode not connected to the plurality of second finger electrodes and having a width smaller than the width of the plurality of bus bar electrodes is disposed in the area not including the plurality of second finger electrodes.

Abstract: A silicon solar cell and a method of manufacturing the same are disclosed. The silicon solar cell includes a silicon semiconductor substrate doped with first conductive impurities, an emitter layer doped with second conductive impurities having polarities opposite polarities of the first conductive impurities on the substrate, an anti-reflective layer on an entire surface of the substrate, an upper electrode that passes through the anti-reflective layer and is connected to the emitter layer, and a lower electrode connected to a lower portion of the substrate. The emitter layer includes a first emitter layer heavily doped with the second conductive impurities and a second emitter layer lightly doped with the second conductive impurities. A surface resistance of the second emitter layer is 100 Ohm/sq to 120 Ohm/sq.

Abstract: A silicon solar cell and a method of manufacturing the same are disclosed. The silicon solar cell includes a silicon semiconductor substrate doped with first conductive impurities, an emitter layer doped with second conductive impurities having polarities opposite polarities of the first conductive impurities on the substrate, an anti-reflective layer on an entire surface of the substrate, an upper electrode that passes through the anti-reflective layer and is connected to the emitter layer, and a lower electrode connected to a lower portion of the substrate. The emitter layer includes a first emitter layer heavily doped with the second conductive impurities and a second emitter layer lightly doped with the second conductive impurities. A surface resistance of the second emitter layer is 100 Ohm/sq to 120 Ohm/sq.

Abstract: A post-processing apparatus of a solar cell is discussed. The post-processing apparatus carries out a post-processing operation including a main period for heat-treating a solar cell including a semiconductor substrate while providing light to the solar cell. The post-processing apparatus includes a main section to carry out the main period. The main section includes a first heat source unit to provide heat to the semiconductor substrate and a light source unit to provide light to the semiconductor substrate. The first heat source unit and the light source unit are positioned in the main section. The light source unit includes a light source constituted by a plasma lighting system (PLS).

Abstract: A method of manufacturing a solar cell is discussed. The method of manufacturing the solar cell includes: forming a conductive region on a semiconductor substrate; forming an electrode connected to the conductive region; and post-processing the semiconductor substrate to passivate the semiconductor substrate. The post-processing of the semiconductor substrate comprises a main processing process for heat-treating the semiconductor substrate while providing light to the semiconductor substrate. A temperature of the main processing process is about 100° C. to about 800° C., and the temperature and light intensity of the main processing process satisfy Equation of 1750?31.8·T+(0.16)·T2?I. Here, T is the temperate (° C.) of the main processing process, and I is the light intensity (mW/cm2) of the main processing process.

Abstract: A solar cell is discussed, which includes a pair of connecting electrodes having a portion having a width smaller than a width of a plurality of bus bar electrodes, and the pair of connecting electrodes connects a plurality of second finger electrodes to both sides of an end of one of the plurality of bus bar electrodes, respectively, wherein the end of the one of the plurality of bus bar electrodes being positioned in a second direction, wherein an area not including the plurality of second finger electrodes is positioned between the pair of connecting electrodes, and wherein an auxiliary electrode not connected to the plurality of second finger electrodes and having a width smaller than the width of the plurality of bus bar electrodes is disposed in the area not including the plurality of second finger electrodes.

Abstract: A solar cell includes a photoelectric conversion layer and a front electrode on the photoelectric conversion layer. The front electrode includes a bus bar electrode; at least one first finger electrode directly connected to the bus bar electrode; a plurality of connecting electrodes extending from the bus bar electrode and having a width smaller than a width of the bus bar electrode, wherein the plurality of connecting electrodes includes portions that are spaced apart from each other to form a space therebetween; at least one second finger electrode connected to at least one of the plurality of connecting electrodes; and an auxiliary electrode formed at the space between the portions of the plurality of connecting electrodes.

Abstract: A solar cell includes a silicon semiconductor substrate; an emitter layer formed on a surface of the silicon semiconductor substrate; an antireflection layer formed on the emitter layer: and a front electrode electrically connected to the emitter layer by penetrating the antireflection layer. The front electrode includes a finger line and a busbar electrode electrically connected to the finger line, and the busbar electrode includes at least a first electrode line and a second electrode line electrically connected to each other. The first and second electrode lines have a width same as or larger than a width of the finger line, and the first and second electrode lines have the width of 100 ?m or less.

Abstract: A solar cell and a method for manufacturing the same are discussed. The solar cell includes a substrate of a first conductive type, an emitter layer of a second conductive type opposite the first conductive type, a plurality of first electrodes connected to the emitter layer, at least one first current collector connected to the plurality of first electrodes, and a second electrode connected to the substrate. The emitter layer forms a p-n junction along with the substrate. Each of the plurality of first electrodes has a multi-layered structure, and the at least one first current collector has a single-layered structure.

Abstract: Discussed is a solar cell including a photoelectric conversion portion, and first and second electrodes connected to the photoelectric conversion portion, wherein at least one of the first and second electrodes includes a plurality of finger electrodes, and at least one bus bar electrode formed in a direction crossing the finger electrodes, wherein the bus bar electrode includes a main bus bar, and an auxiliary bus bar formed adjacent to the main bus bar such that the auxiliary bus bar is spaced from the main bus bar by a predetermined spacing area, and wherein the spacing area has a width equal to or less than a pitch of the plurality of finger electrodes.

Abstract: A solar cell, a solar cell manufacturing device, and a method for manufacturing the solar cell are discussed. The solar cell manufacturing device includes a chamber; an ion implantation unit configured to implant ions into a substrate inside the chamber and a mask positioned between the ion implantation unit and the substrate. The mask includes a first opening to form a lightly doped region having a first concentration at one surface of the substrate, a second opening to form a heavily doped region having a second concentration higher than the first concentration at the one surface of the substrate, and at least one connector formed to cross the second opening. The second opening includes finger openings formed in a first direction, and bus openings formed in a second direction crossing the first direction.

Abstract: A solar cell includes a silicon semiconductor substrate; an emitter layer formed on a surface of the silicon semiconductor substrate; an antireflection layer formed on the emitter layer: and a front electrode electrically connected to the emitter layer by penetrating the antireflection layer. The front electrode includes a finger line and a busbar electrode electrically connected to the finger line, and the busbar electrode includes at least a first electrode line and a second electrode line electrically connected to each other. The first and second electrode lines have a width same as or larger than a width of the finger line, and the first and second electrode lines have the width of 100 ?m or less.

Abstract: A solar cell includes a substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type which is positioned at the substrate and has a first sheet resistance, a first heavily doped region which is positioned at the substrate and has a second sheet resistance less than the first sheet resistance, a plurality of first electrodes which are positioned on the substrate, overlap at least a portion of the first heavily doped region, and are connected to the at least a portion of the first heavily doped region, and at least one second electrode which is positioned on the substrate and is connected to the substrate.

Abstract: The present embodiment relates to a solar cell and a method for manufacturing the same. A solar cell according to an embodiment includes a substrate comprising silicon semiconductor material; an emitter region formed on a rear surface of the substrate; a back surface field region formed on the rear surface of the substrate, wherein the back surface field region comprising a first back surface field region and a second the back surface field region; a first electrode electrically connected to the emitter region; and a second electrode electrically that is connected to the first back surface field region, wherein the second electrode that is not electrically connected to the second back surface field region.