Patents by Inventor H. Peter W. Hey
H. Peter W. Hey has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7427338Abstract: An apparatus comprising an electrolyte cell, an anode, and a porous rigid diffuser. The electrolyte cell is configured to receive a substrate to have a metal film deposited thereon. An anode is contained within the electrolyte cell. A porous rigid diffuser is connected to the electrolyte cell and extends across the electrolyte cell. The diffuser is positioned between a location that the substrate is to be positioned when the metal film is deposited thereon and the anode.Type: GrantFiled: June 30, 2003Date of Patent: September 23, 2008Assignee: Applied Materials, Inc.Inventors: Yezdi N. Dordi, Joseph J. Stevens, H. Peter W. Hey, Donald J. K. Olgado
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Patent number: 6881318Abstract: A method for depositing a metal on a substrate is provided. The metal is deposited by sequentially applying a electrodeposition pulse followed by an electrodissolution pulse to the substrate. After each electrodissolution pulse an before the next electrodeposition pulse there is provided at least one time interval of zero electrical voltage or current, also known as an “off-time”, between the pulses. The first two electrodeposition pulses should preferably have the same time durations. Thereafter, the time durations of subsequent electrodeposition pulses are gradually decreased to provide a void-free and seam-free deposition of metal in high aspect ratio features.Type: GrantFiled: July 26, 2001Date of Patent: April 19, 2005Assignee: Applied Materials, Inc.Inventors: H. Peter W. Hey, Yezdi Dordi
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Patent number: 6837978Abstract: A method and associated apparatus for electro-chemically depositing a metal film on a substrate having a metal seed layer. The apparatus comprises a substrate holder that holds the substrate. The electrolyte cell receives the substrate in a processing position. The actuator is connected to the substrate holder and adjustably positions the substrate relative to the electrolyte cell. The method involves electro-chemically depositing a metal film on a substrate having a metal seed layer comprising disposing the substrate in an electrolyte cell that is configured to receive the substrate. The method comprises adjustably positioning the substrate relative to the electrolyte cell.Type: GrantFiled: October 12, 2000Date of Patent: January 4, 2005Assignee: Applied Materials, Inc.Inventors: H. Peter W. Hey, Yezdi N. Dordi, Donald J. K. Olgado, Mark Denome
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Publication number: 20040035695Abstract: An apparatus comprising an electrolyte cell, an anode, and a porous rigid diffuser. The electrolyte cell is configured to receive a substrate to have a metal film deposited thereon. An anode is contained within the electrolyte cell. A porous rigid diffuser is connected to the electrolyte cell and extends across the electrolyte cell. The diffuser is positioned between a location that the substrate is to be positioned when the metal film is deposited thereon and the anode.Type: ApplicationFiled: June 30, 2003Publication date: February 26, 2004Applicant: APPLIED MATERIALS, INC.Inventors: Yezdi N. Dordi, Joseph J. Stevens, H. Peter W. Hey, Donald J. K. Olgado
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Publication number: 20040020780Abstract: A method for immersing a substrate into a processing solution. The method includes connecting a power supply between a conductive layer on the substrate and an electrode positioned in the processing solution, immersing the substrate into the processing solution, and applying an electrical bias to the conductive layer during the immersion.Type: ApplicationFiled: April 21, 2003Publication date: February 5, 2004Inventors: H. Peter W. Hey, Yezdi N. Dordi
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Publication number: 20030168346Abstract: An electroplating system that includes a wet area comprising one or more electrochemical processing cells for processing one or more semiconductor substrates in an electrolyte solution, a dry area for transferring the semiconductor substrates to the wet area prior to processing the semiconductor substrates and for receiving the semiconductor substrates from the wet area after processing the semiconductor substrates, and a cleaning module for removing unwanted deposits from the semiconductor substrates after processing the semiconductor substrates in the wet area but prior to transferring the semiconductor substrates to the dry area.Type: ApplicationFiled: March 13, 2003Publication date: September 11, 2003Applicant: Applied Materials, Inc.Inventors: H. Peter W. Hey, Michael N. Sugarman, Mark Denome
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Patent number: 6585876Abstract: An apparatus comprising an electrolyte cell, an anode, and a porous rigid diffuser. The electrolyte cell is configured to receive a substrate to have a metal film deposited thereon. An anode is contained within the electrolyte cell. A porous rigid diffuser is connected to the electrolyte cell and extends across the electrolyte cell. The diffuser is positioned between a location that the substrate is to be positioned when the metal film is deposited thereon and the anode.Type: GrantFiled: December 5, 2000Date of Patent: July 1, 2003Assignee: Applied Materials Inc.Inventors: Yezdi N. Dordi, Joseph J. Stevens, H. Peter W. Hey, Donald J. K. Olgado
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Publication number: 20030092266Abstract: A system for supplying processing fluid to a substrate processing chamber. The system consists of a number of fluid storages each which stores a separate processing fluid; at least two fluid conduits along which processing fluid flows from the fluid storages to the processing apparatus; and a fluid inlet which connects the fluid conduits to the processing chamber. The inlet has a separate fluid passage, corresponding to each of the fluid conduits, formed along it. Each fluid passage opens at or near an inner surface of a wall of the chamber into a mixing zone, so that fluid moving along one fluid passage is prevented from mixing with fluid moving along any other passage until reaching the mixing zone. Typically at least two of the fluid passages are vertically displaced from one another to, at least partially, define upper and lower fluid flow paths.Type: ApplicationFiled: January 3, 2003Publication date: May 15, 2003Inventors: Roger N. Anderson, H. Peter W. Hey, David K. Carlson, Mahalingam Venkatesan, Norma Riley
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Patent number: 6551488Abstract: A method and apparatus for processing a substrate is described. In one aspect, a processing system is provided which includes a wet area and a dry area. In another aspect, a method comprises processing the substrate in the process cell. The substrate is transferred from the process cell to a dry module and then transferring the substrate to a drying area.Type: GrantFiled: September 8, 2000Date of Patent: April 22, 2003Assignee: Applied Materials, Inc.Inventors: H. Peter W. Hey, Michael N. Sugarman, Mark Denome
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Patent number: 6551484Abstract: A method of immersing a substrate into electrolyte solution for electroplating, the method comprising connecting an electric source between an anode immersed in the electrolyte solution and a seed layer formed on the substrate. A first voltage level of the seed layer is biased to be equal to, or more positive than, a second voltage level of the anode. The substrate is then immersed into the electrolyte solution.Type: GrantFiled: January 18, 2001Date of Patent: April 22, 2003Assignee: Applied Materials, Inc.Inventors: H. Peter W. Hey, Yezdi N. Dordi
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Publication number: 20030034250Abstract: A method of immersing a substrate into electrolyte solution for electroplating, the method comprising connecting an electric source between an anode immersed in the electrolyte solution and a seed layer formed on the substrate. A first voltage level of the seed layer is biased to be equal to, or more positive than, a second voltage level of the anode. The substrate is then immersed into the electrolyte solution.Type: ApplicationFiled: January 18, 2001Publication date: February 20, 2003Applicant: Applied Materials, Inc.Inventors: H. Peter W. Hey, Yezdi N. Dordi
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Patent number: 6514671Abstract: The present invention provides integrated circuit fabrication methods and devices wherein dual damascene structures (332 and 334) are formed in consecutive dielectric layers (314 and 316) having dissimilar etching characteristics. The present invention also provides for such methods and devices wherein these dielectric layers have different dielectric constants. Additional embodiments of the present invention include the use of single layer masks, such as silicon-based photosensitive materials which form a hard mask (622) upon exposure to radiation. In additional embodiments, manufacturing systems (710) are provided for fabricating IC structures. These systems include a controller (700) which is adapted for interacting with a plurality of fabrication stations (720, 722, 724, 726, 728 and 730).Type: GrantFiled: September 29, 2000Date of Patent: February 4, 2003Assignee: Applied Materials, Inc.Inventors: Suketu A. Parikh, Mehul B. Naik, Samuel Broydo, H. Peter W. Hey
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Publication number: 20030019755Abstract: A method for depositing a metal on a substrate is provided. The metal is deposited by sequentially applying a electrodeposition pulse followed by an electrodissolution pulse to the substrate. After each electrodissolution pulse an before the next electrodeposition pulse there is provided at least one time interval of zero electrical voltage or current, also known as an “off-time”, between the pulses. The first two electrodeposition pulses should preferably have the same time durations. Thereafter, the time durations of subsequent electrodeposition pulses are gradually decreased to provide a void-free and seam-free deposition of metal in high aspect ratio features.Type: ApplicationFiled: July 26, 2001Publication date: January 30, 2003Applicant: Applied Materials, Inc.Inventors: H. Peter W. Hey, Yezdi Dordi
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Publication number: 20020020358Abstract: A method and apparatus for depositing a film on a substrate. According to the present invention a prewafer reaction layer is deposited onto a susceptor placed in the reaction chamber to form a prewafer reaction layer coated susceptor prior to film deposition. A deposition gas is then fed into the reaction chamber so that it flows over the prewafer reaction layer coated susceptor and the substrate to form a film on the prewafer reaction layer coated susceptor and the substrate.Type: ApplicationFiled: November 11, 1999Publication date: February 21, 2002Inventors: H. PETER W. HEY, VEDAPURAM S. ACHUTHARAMAN, JOHANES F. N. SWENBERG
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Publication number: 20010052465Abstract: An apparatus comprising an electrolyte cell, an anode, and a porous rigid diffuser. The electrolyte cell is configured to receive a substrate to have a metal film deposited thereon. An anode is contained within the electrolyte cell. A porous rigid diffuser is connected to the electrolyte cell and extends across the electrolyte cell. The diffuser is positioned between a location that the substrate is to be positioned when the metal film is deposited thereon and the anode.Type: ApplicationFiled: December 5, 2000Publication date: December 20, 2001Applicant: Applied Materials, Inc.Inventors: Yezdi N. Dordi, Joseph J. Stevens, H. Peter W. Hey, Donald J. K. Olgado
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Patent number: 6130105Abstract: The present invention is a method and apparatus for depositing a film on a substrate. According to the present invention a characteristic of a substrate is determined. The substrate is then heated by heat from an upper heat source and heat from a lower heat source wherein the ratio of heat supplied from the upper heat source relative to the lower heat source is dependent upon the determined wafer characteristic.Type: GrantFiled: August 28, 1997Date of Patent: October 10, 2000Assignee: Applied Materials, Inc.Inventors: Gregory F. Redinbo, H. Peter W. Hey
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Patent number: 6022587Abstract: A method and apparatus for depositing a film on a substrate. According to the present invention a prewafer reaction layer is deposited onto a susceptor placed in the reaction chamber to form a prewafer reaction layer coated susceptor prior to film deposition. A deposition gas is then fed into the reaction chamber so that it flows over the prewafer reaction layer coated susceptor and the substrate to form a film on the prewafer reaction layer coated susceptor and the substrate.Type: GrantFiled: May 13, 1997Date of Patent: February 8, 2000Assignee: Applied Materials, Inc.Inventors: H. Peter W. Hey, Vedapuram S. Achutharaman, Johanes F. N. Swenberg
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Patent number: 5899752Abstract: A method of in-situ cleaning a native oxide layer from the surface of a silicon wafer positioned in a vacuum chamber that is substantially free of oxidizing species by passing at least one non-oxidizing gas over the native oxide layer at a wafer cleaning temperature between about 650.degree. C. to about 1025.degree. C. for a sufficient length of time until such native oxide layer is removed.Type: GrantFiled: April 26, 1995Date of Patent: May 4, 1999Assignee: Applied Materials, Inc.Inventors: H. Peter W Hey, David Carlson
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Patent number: 5834059Abstract: The present disclosure is directed to a process of depositing a layer of a material on a wafer, which comprises depositing a layer of the same material to be deposited on the wafer on the back surface of a susceptor.Type: GrantFiled: March 27, 1996Date of Patent: November 10, 1998Assignee: Applied Materials, Inc.Inventors: Roger N. Anderson, H. Peter W. Hey, Israel Beinglass, Mahalingam Venkatesan
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Patent number: 5725673Abstract: The present disclosure is directed to an apparatus for depositing a layer of a material on a wafer. The apparatus includes a deposition chamber having an upper dome, a lower dome and a side wall between the upper and lower domes. A susceptor plate is in and extends across the deposition chamber to divide the deposition chamber into an upper portion above the susceptor plate and a lower portion below the susceptor plate. An exhaust passage formed through the side wall and is coupled to an upper passage which extends to the upper portion of the deposition chamber and is coupled to a lower passage which extends to the lower portion of the deposition chamber.Type: GrantFiled: September 25, 1996Date of Patent: March 10, 1998Assignee: Applied Materials Inc.Inventors: Roger N. Anderson, H. Peter W. Hey, Israel Beinglass, Mahalingam Venkatesan