Abstract: A semiconductor memory device includes a first substrate including a first region and a second region, a stacked structure only on the first region of the first substrate among the first region and the second region of the first substrate, the stacked structure including word lines, an interlayer insulating film covering the stacked structure, a dummy conductive structure inside the interlayer insulating film, the dummy conductive structure extending through the stacked structure to contact the first substrate, and a plate contact plug inside the interlayer insulating film, the plate contact plug being connected to the second region of the first substrate, and a height of an upper surface of the dummy conductive structure being greater than a height of an upper surface of the plate contact plug relative to an upper surface of the first substrate.

Abstract: Disclosed is a method for manufacturing the polysilsesquioxane (PSSQ) within the carbon dioxide solvent through the control of the pressure and temperature within a reactor by the state changes, e.g., a liquid state or supercritical state, of carbon dioxide as a solvent which is environmentally friendly and pollution-free, that is to say, by making use of the fact that the solubility of reactant and product is changed according to the pressure and temperature in manufacturing the polysilsesquioxane (PSSQ).

Abstract: Disclosed is a method for manufacturing the polysilsesquioxane (PSSQ) within the carbon dioxide solvent through the control of the pressure and temperature within a reactor by the state changes, e.g., a liquid state or supercritical state, of carbon dioxide as a solvent which is environmentally friendly and pollution-free, that is to say, by making use of the fact that the solubility of reactant and product is changed according to the pressure and temperature in manufacturing the polysilsesquioxane (PSSQ).

Abstract: Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.

Abstract: A method for preparing a superhydrophobic random copolymer using a carbon dioxide solvent, and more particularly, to a method for preparing a surface coating copolymer having a superhydrophobic performance by radical copolymerization of a hydrocarbon monomer, and a silicone monomer or a fluorinated monomer using a supercritical carbon dioxide solvent as a copolymerization solvent.

Abstract: Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.

Abstract: Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.

Abstract: Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.

Abstract: Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.