Patents by Inventor Hadyn N. G. Wadley

Hadyn N. G. Wadley has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatus and method for intra-layer modulation of the material deposition and assist beam and the multilayer structure produced therefrom
    Publication number: 20030054133
    Abstract: A method of producing a multilayer structure by using a physical-vapor deposition apparatus is provided. In general the method includes the steps of: forming a bottom layer having a first material wherein a first plurality of monolayers of the first material is deposited on an underlayer using a low incident adatom energy. Next, a second plurality of monolayers of the first material is deposited on top of the first plurality of monolayers of the first material using a high incident adatom energy. Thereafter, the method further includes forming a second layer having a second material wherein a first plurality of monolayers of the second material is deposited on the second plurality of monolayers of the first material using a low incident adatom energy. Next, a second plurality of monolayers of the second material is deposited on the first plurality of mononlayers of the second material using a high incident adatom energy.
    Type: Application
    Filed: September 18, 2002
    Publication date: March 20, 2003
    Inventors: Hadyn N.G. Wadley, Xiaowang Zhou, Junjie Quan
  • Apparatus and method for intra-layer modulation of the material deposition and assist beam and the multilayer structure produced therefrom
    Patent number: 6478931
    Abstract: A method of producing a multilayer structure that has reduced interfacial roughness and interlayer mixing by using a physical-vapor deposition apparatus. In general the method includes forming a bottom layer having a first material wherein a first plurality of monolayers of the first material is deposited on an underlayer using a low incident adatom energy. Next, a second plurality of monolayers of the first material is deposited on top of the first plurality of monolayers of the first material using a high incident adatom energy. Thereafter, the method further includes forming a second layer having a second material wherein a first plurality of monolayers of the second material is deposited on the second plurality of monolayers of the first material using a low incident adatom energy. Next, a second plurality of monolayers of the second material is deposited on the first plurality of monolayers of the second material using a high incident adatom energy.
    Type: Grant
    Filed: August 7, 2000
    Date of Patent: November 12, 2002
    Assignee: University of Virginia Patent Foundation
    Inventors: Hadyn N. G. Wadley, Xiaowang Zhou, Junjie Quan