Abstract: Discussed is an electroluminescence display device including a substrate having a display area and a non-display area, a light emitting diode in the display area, an encapsulation layer on the light emitting diode, the encapsulation layer including a first inorganic encapsulation layer, and a second inorganic encapsulation layer, an upper passivation film on the second inorganic encapsulation layer, a through-hole inside the display area to penetrate the substrate, an inner dam surrounding the through-hole, a trench between the inner dam and the through-hole, a buffer layer, and a thin film transistor electrically connected to the light emitting diode. The buffer layer is on the display area except at the through-hole and passes below the dam and the trench. The first and second inorganic encapsulation layers cover the inner dam and the trench. The trench includes a recessed portion, and the light emitting diode includes a light emitting layer.

Abstract: An electroluminescence display device including a substrate having a display area and a non-display area arranged near the display area, a light emitting diode in the display area, an encapsulation layer on the light emitting diode, the encapsulation layer including a first inorganic encapsulation layer, a second inorganic encapsulation layer and an organic encapsulation layer disposed between the first and second inorganic encapsulation layers, a through-hole arranged inside the display area to penetrate the substrate, an inner dam surrounding the through-hole, a trench arranged between the inner dam and the through-hole, and an etch-stopper arranged between the trench and the through-hole, wherein the first inorganic encapsulation layer and the second inorganic encapsulation layer are disposed on the display area and covering the inner dam and the trench.

Abstract: An electroluminescence display device including a substrate having a display area and a non-display area arranged near the display area, a light emitting diode in the display area, an encapsulation layer on the light emitting diode, the encapsulation layer including a first inorganic encapsulation layer, a second inorganic encapsulation layer and an organic encapsulation layer disposed between the first and second inorganic encapsulation layers, a through-hole arranged inside the display area to penetrate the substrate, an inner dam surrounding the through-hole, a trench arranged between the inner dam and the through-hole, and an etch-stopper arranged between the trench and the through-hole, wherein the first inorganic encapsulation layer and the second inorganic encapsulation layer are disposed on the display area and covering the inner dam and the trench.

Abstract: An electroluminescence display device comprising a through-hole in a display area is discussed. The electroluminescence display device according to one embodiment of the present disclosure comprises a substrate having a display area and a non-display area arranged near the display area; a light emitting diode in the display area; an encapsulation layer on the light emitting diode; a through-hole arranged inside the display area to penetrate the substrate; an inner dam surrounding the through-hole; a trench arranged between the inner dam and the through-hole; and an etch-stopper arranged between the trench and the through-hole on the an insulating layer.

Abstract: An electroluminescence display device comprising a through-hole in a display area is discussed. The electroluminescence display device according to one embodiment of the present disclosure comprises a substrate having a display area and a non-display area arranged near the display area; a light emitting diode in the display area; an encapsulation layer on the light emitting diode; a through-hole arranged inside the display area to penetrate the substrate; an inner dam surrounding the through-hole; a trench arranged between the inner dam and the through-hole; and an etch-stopper arranged between the trench and the through-hole on the an insulating layer.

Abstract: Disclosed is a display device which is capable of preventing an encapsulation film from being formed in a scribing line, and a method for manufacturing the same. The display device includes a substrate having a display area provided with pixels, a non-display area surrounding the display area, an encapsulation film including an inorganic film which covers the display area, and a buffer layer. The buffer layer is provided at a predetermined interval from the display area in the non-display area and is brought into contact with the edge of the inorganic film.

Abstract: An electroluminescence display device comprising a through-hole in a display area is discussed. The electroluminescence display device according to one embodiment of the present disclosure comprises a substrate having a display area and a non-display area arranged near the display area; a light emitting diode in the display area; an encapsulation layer on the light emitting diode; a through-hole arranged inside the display area to penetrate the substrate; an inner dam surrounding the through-hole; a trench arranged between the inner dam and the through-hole; and an etch-stopper arranged between the trench and the through-hole on the an insulating layer.

Abstract: Provided is a flexible organic light emitting display device including a pixel area and a bezel area that includes a first inorganic encapsulation layer on an organic light emitting element of the pixel area; a second inorganic encapsulation layer that is relatively flatter than the first inorganic encapsulation layer and encapsulates a plurality of foreign matter compensation layers by contacting the first inorganic encapsulation layer in the bezel area; and a foreign matter compensation layer structure in which the plurality of foreign matter compensation layers are stacked between the first inorganic encapsulation layer and the second inorganic encapsulation layer.

Abstract: Disclosed is a display device which is capable of preventing an encapsulation film from being formed in a scribing line, and a method for manufacturing the same. The display device includes a substrate having a display area provided with pixels, a non-display area surrounding the display area, an encapsulation film including an inorganic film which covers the display area, and a buffer layer. The buffer layer is provided at a predetermined interval from the display area in the non-display area and is brought into contact with the edge of the inorganic film.

Abstract: The present disclosure provides an organic light emitting display that may comprise: an organic light emitting device (OLED) including a first electrode, an organic layer including a light-emitting layer, and a second electrode, which are sequentially formed on a substrate having a Thin Film Transistor (TFT) formed on the substrate; and an upper encapsulation layer, which is formed of an aluminum oxide-based material, is formed in a single layer, and is disposed on the substrate on which the organic light emitting device (OLED) is formed, wherein a Water Vapor Transmission Rate (WVTR) of the upper encapsulation layer is smaller than or equal to 10?2 g/m2/day.

Abstract: Provided is a flexible organic light emitting display device including a pixel area and a bezel area that includes a first inorganic encapsulation layer on an organic light emitting element of the pixel area; a second inorganic encapsulation layer that is relatively flatter than the first inorganic encapsulation layer and encapsulates a plurality of foreign matter compensation layers by contacting the first inorganic encapsulation layer in the bezel area; and a foreign matter compensation layer structure in which the plurality of foreign matter compensation layers are stacked between the first inorganic encapsulation layer and the second inorganic encapsulation layer.

Abstract: The present disclosure provides an organic light emitting display that may comprise: an organic light emitting device (OLED) including a first electrode, an organic layer including a light-emitting layer, and a second electrode, which are sequentially formed on a substrate having a Thin Film Transistor (TFT) formed on the substrate; and an upper encapsulation layer, which is formed of an aluminum oxide-based material, is formed in a single layer, and is disposed on the substrate on which the organic light emitting device (OLED) is formed, wherein a Water Vapor Transmission Rate (WVTR) of the upper encapsulation layer is smaller than or equal to 10?2 g/m2/day.