Abstract: An image sensor may include: a photoelectric conversion layer suitable for converting light into an electrical signal; a spacer layer formed over the photoelectric conversion layer, and suitable for preventing light reflection while adjusting a focus; and a first condensing layer formed at the inner bottom of the spacer layer, and suitable for condensing incident light.

Abstract: An image sensor may include: a photoelectric conversion layer; an anti-reflection layer formed over the photoelectric conversion layer so as to minimize reflectance of light; a guide layer formed over the anti-reflection layer, and suitable for guiding the light to the photoelectric conversion layer; and a first condensing layer buried at the inner top of the guide layer, and suitable for condensing incident light.

Abstract: An image sensor may include: a photoelectric conversion layer suitable for converting light into an electrical signal; a spacer layer formed over the photoelectric conversion layer, and suitable for preventing light reflection while adjusting a focus; and a first condensing layer formed at the inner bottom of the spacer layer, and suitable for condensing incident light.

Abstract: An image sensor includes a color filter configured to pass a specific color of light; a micro lens formed under the color filter and configured with a plurality of layers in which an upper layer has a smaller area than a lower layer; and a photo device formed under the micro lens and configured to receive light passing through the micro lens and convert the received light into an electrical signal.

Abstract: The present invention is provided to remove scattering from other parts, except for an end part of a nano-probe, in a near-field microscope, and to enable a spectral analysis by delaying the generation of multiple reflections caused through the shaft of the nano-probe. A first characteristic of the present invention is to temporally delay generation of multiple reflections by manufacturing a probe portion to have a predetermined length or more in a tuning-fork based near-field probe. A second characteristic of the present invention is to provide a near-field microscope which includes a tuning-fork based near-field probe having a structure as above, and can measure a time-domain transient reaction of a scattered wave. A third characteristic of the present invention is to provide a method for performing a spectral analysis on a time-domain signal measured by the near-field microscope.

Abstract: An image sensor includes a color filter configured to pass a specific color of light; a micro lens formed under the color filter and configured with a plurality of layers in which an upper layer has a smaller area than a lower layer; and a photo device formed under the micro lens and configured to receive light passing through the micro lens and convert the received light into an electrical signal.

Abstract: The present invention is provided to remove scattering from other parts, except for an end part of a nano-probe, in a near-field microscope, and to enable a spectral analysis by delaying the generation of multiple reflections caused through the shaft of the nano-probe. A first characteristic of the present invention is to temporally delay generation of multiple reflections by manufacturing a probe portion to have a predetermined length or more in a tuning-fork based near-field probe. A second characteristic of the present invention is to provide a near-field microscope which includes a tuning-fork based near-field probe having a structure as above, and can measure a time-domain transient reaction of a scattered wave. A third characteristic of the present invention is to provide a method for performing a spectral analysis on a time-domain signal measured by the near-field microscope.

Abstract: A CMOS image sensor includes an active pixel structure suitable for sensing light incident from outside and converting a sensed light into an electrical signal, and an optical block structure suitable for blocking a visible light and passing a UV light to check and evaluate an electrical characteristic of the active pixel area. The UV pass filter includes first and second insulation layers comprising an insulator, and a metal layer formed between the first and second insulation layers.

Abstract: A CMOS image sensor includes an active pixel structure suitable for sensing light incident from outside and converting a sensed light into an electrical signal, and an optical block structure suitable for blocking a visible light and passing a UV light to check and evaluate an electrical characteristic of the active pixel area. The UV pass filter includes first and second insulation layers comprising an insulator, and a metal layer formed between the first and second insulation layers.

Abstract: The present invention provides a color mixing lens which can improve color reproducibility, be made slim and adjust an emission pattern; and a liquid crystal display device having the same. The color mixing lens includes a light receiving portion having at least two light emission diodes positioned at a side for emitting color lights different from each other and light receiving recesses for placing the light emission diodes therein respectively, a color mixing portion formed on the light receiving portion for mixing the lights from the light emission diodes into a white color light, and a light emission portion formed on the color mixing portion for emitting the white light from the color mixing portion through a side thereof.

Abstract: The present invention provides a color mixing lens which can improve color reproducibility, be made slim and adjust an emission pattern; and a liquid crystal display device having the same. The color mixing lens includes a light receiving portion having light receiving recesses which respectively house light emission diodes formed at a side surface thereof for positioning at least two light emission diodes at the side surface for producing color lights different from each other, a color mixing portion formed on the light receiving portion for mixing the lights from the light emission diodes into a white color light, and a light emission portion formed on the color mixing portion for emitting the white light from the color mixing portion through a top surface thereof.

Abstract: The present invention relates to a plastic photonic crystal fiber for terahertz wave transmission and a method for the manufacturing thereof. More particularly, the present invention is directed to a plastic photonic crystal fiber that can be easily manufactured and has low loss characteristics to be used as a waveguide of terahertz waves. The plastic photonic crystal fiber includes a crystal defect component having a longitudinal axis and a photonic crystal component surrounding the crystal defect component. The photonic crystal component has an array of a plurality of plastic elements having longitudinal axes and forming a 2-dimensional photonic crystal structure with a predetermined lattice constant. Further, the plastic photonic crystal fiber of the present invention can be used as a preform from which a plastic photonic crystal fiber for an optical communication (400-800 nm) can be drawn.

Abstract: The present invention relates to a plastic photonic crystal fiber for terahertz wave transmission and a method for the manufacturing thereof. More particularly, the present invention is directed to a plastic photonic crystal fiber that can be easily manufactured and has low loss characteristics to be used as a waveguide of terahertz waves. The plastic photonic crystal fiber includes a crystal defect component having a longitudinal axis and a photonic crystal component surrounding the crystal defect component. The photonic crystal component has an array of a plurality of plastic elements having longitudinal axes and forming a 2-dimensional photonic crystal structure with a predetermined lattice constant. Further, the plastic photonic crystal fiber of the present invention can be used as a preform from which a plastic photonic crystal fiber for an optical communication (400-800 nm) can be drawn.

Abstract: The present invention provides a color mixing lens which can improve color reproducibility, be made slim and adjust an emission pattern; and a liquid crystal display device having the same. The color mixing lens includes a light receiving portion having light receiving recesses which respectively house light emission diodes formed at a side surface thereof for positioning at least two light emission diodes at the side surface for producing color lights different from each other, a color mixing portion formed on the light receiving portion for mixing the lights from the light emission diodes into a white color light, and a light emission portion formed on the color mixing portion for emitting the white light from the color mixing portion through a top surface thereof.

Abstract: The present invention provides a color mixing lens which can improve color reproducibility, be made slim and adjust an emission pattern; and a liquid crystal display device having the same. The color mixing lens includes a light receiving portion having at least two light emission diodes positioned at a side for emitting color lights different from each other and light receiving recesses for placing the light emission diodes therein respectively, a color mixing portion formed on the light receiving portion for mixing the lights from the light emission diodes into a white color light, and a light emission portion formed on the color mixing portion for emitting the white light from the color mixing portion through a side thereof.

Abstract: The present invention relates to a plastic photonic crystal fiber for terahertz wave transmission and a method for the manufacturing thereof. More particularly, the present invention is directed to a plastic photonic crystal fiber that can be easily manufactured and has low loss characteristics to be used as a waveguide of terahertz waves. The plastic photonic crystal fiber includes a crystal defect component having a longitudinal axis and a photonic crystal component surrounding the crystal defect component. The photonic crystal component has an array of a plurality of plastic elements having longitudinal axes and forming a 2-dimensional photonic crystal structure with a predetermined lattice constant. Further, the plastic photonic crystal fiber of the present invention can be used as a preform from which a plastic photonic crystal fiber for an optical communication (400-800 nm) can be drawn.

Abstract: The present invention relates to a plastic photonic crystal fiber for terahertz wave transmission and a method for the manufacturing thereof. More particularly, the present invention is directed to a plastic photonic crystal fiber that can be easily manufactured and has low loss characteristics to be used as a waveguide of terahertz waves. The plastic photonic crystal fiber includes a crystal defect component having a longitudinal axis and a photonic crystal component surrounding the crystal defect component. The photonic crystal component has an array of a plurality of plastic elements having longitudinal axes and forming a 2-dimensional photonic crystal structure with a predetermined lattice constant. Further, the plastic photonic crystal fiber of the present invention can be used as a preform from which a plastic photonic crystal fiber for an optical communication (400-800 nm) can be drawn.

Abstract: The present invention relates to a plastic photonic crystal fiber for terahertz wave transmission and a method for the manufacturing thereof. More particularly, the present invention is directed to a plastic photonic crystal fiber that can be easily manufactured and has low loss characteristics to be used as a waveguide of terahertz waves. The plastic photonic crystal fiber includes a crystal defect component having a longitudinal axis and a photonic crystal component surrounding the crystal defect component. The photonic crystal component has an array of a plurality of plastic elements having longitudinal axes and forming a 2-dimensional photonic crystal structure with a predetermined lattice constant. Further, the plastic photonic crystal fiber of the present invention can be used as a preform from which a plastic photonic crystal fiber for an optical communication (400–800 nm) can be drawn.

Abstract: The present invention relates to a plastic photonic crystal fiber for terahertz wave transmission and a method for the manufacturing thereof. More particularly, the present invention is directed to a plastic photonic crystal fiber that can be easily manufactured and has low loss characteristics to be used as a waveguide of terahertz waves. The plastic photonic crystal fiber includes a crystal defect component having a longitudinal axis and a photonic crystal component surrounding the crystal defect component. The photonic crystal component has an array of a plurality of plastic elements having longitudinal axes and forming a 2-dimensional photonic crystal structure with a predetermined lattice constant. Further, the plastic photonic crystal fiber of the present invention can be used as a preform from which a plastic photonic crystal fiber for an optical communication (400-800 nm) can be drawn.