Patents by Inventor Haena YIM

Haena YIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9704610
    Abstract: Disclosed is a manganese tin oxide-based transparent conducting oxide (TCO) with an optimized composition, which has low surface roughness, low sheet resistance and high transmittance even when deposited at room temperature, a multilayer transparent conductive film using the same and a method for fabricating the same. The manganese tin oxide-based transparent conducting oxide has a composition of MnxSn1-xO (0<x?0.055), and the multilayer transparent conductive film includes: a manganese tin oxide-based transparent conducting oxide having a composition of MnxSn1-xO (0<x?0.055); a metal thin film deposited on the manganese tin oxide-based transparent conducting oxide; and a manganese tin oxide-based transparent conducting oxide having a composition of MnxSn1-xO (0<x?0.055) deposited on the metal thin film.
    Type: Grant
    Filed: February 3, 2016
    Date of Patent: July 11, 2017
    Assignee: Korea Institute of Science and Technology
    Inventors: Ji-Won Choi, Won-Kook Choi, Jin Sang Kim, Haena Yim
  • Publication number: 20160225479
    Abstract: Disclosed is a manganese tin oxide-based transparent conducting oxide (TCO) with an optimized composition, which has low surface roughness, low sheet resistance and high transmittance even when deposited at room temperature, a multilayer transparent conductive film using the same and a method for fabricating the same. The manganese tin oxide-based transparent conducting oxide has a composition of MnxSn1-xO (0<x?0.055), and the multilayer transparent conductive film includes: a manganese tin oxide-based transparent conducting oxide having a composition of MnxSn1-xO (0<x?0.055); a metal thin film deposited on the manganese tin oxide-based transparent conducting oxide; and a manganese tin oxide-based transparent conducting oxide having a composition of MnxSn1-x(0<x?0.055) deposited on the metal thin film.
    Type: Application
    Filed: February 3, 2016
    Publication date: August 4, 2016
    Applicant: Korea Institute of Science and Technology
    Inventors: Ji-Won CHOI, Won-Kook CHOI, Jin Sang KIM, Haena YIM
  • Publication number: 20160133917
    Abstract: A method of fabricating a cathode for a thin film battery includes depositing a cathode active material on a substrate, and crystallizing the cathode active material by irradiating laser onto the cathode active material. The cathode active material may be deposited on the substrate at normal temperature, and a light and easily processable polymer substrate may be used by crystallizing the cathode active material at low temperature using laser. A thin film battery including the cathode fabricated by the above method has excellent charging/discharging characteristics such as high discharge capacity.
    Type: Application
    Filed: July 17, 2015
    Publication date: May 12, 2016
    Applicant: Korea Institute of Science and Technology
    Inventors: Ji-Won CHOI, Seok Jin YOON, Jin Sang KIM, Chong Yun KANG, Seung Hyub BAEK, Seong Keun KIM, Beomjin KWON, Haena YIM