Abstract: Efficient and convenient storage systems and methods are presented. In one embodiment, a fractured erase process is performed in which a pre-program process, erase process and soft program process are initiated independently. Memory cells can be pre-programmed and conditioned independent of an erase command. The initiation of the independent pre-programming is partitioned from an erase command which is partitioned from initiation of a soft-programming command. A cell is erased wherein the erasing includes erase operations that are partitioned from the pre-preprogramming process. In one embodiment, the independent pre-program process is run in the background.

Abstract: Efficient and convenient storage systems and methods are presented. In one embodiment, a fractured erase process is performed in which a pre-program process, erase process and soft program process are initiated independently. Memory cells can be pre-programmed and conditioned independent of an erase command. The initiation of the independent pre-programming is partitioned from an erase command which is partitioned from initiation of a soft-programming command. A cell is erased wherein the erasing includes erase operations that are partitioned from the pre-preprogramming process. In one embodiment, the independent pre-program process is run in the background.

Abstract: Efficient and convenient storage systems and methods are presented. In one embodiment, a fractured erase process is performed in which a pre-program process, erase process and soft program process are initiated independently. Memory cells can be pre-programmed and conditioned independent of an erase command. The initiation of the independent pre-programming is partitioned from an erase command which is partitioned from initiation of a soft-programming command. A cell is erased wherein the erasing includes erase operations that are partitioned from the pre-preprogramming process. In one embodiment, the independent pre-program process is run in the background.

Abstract: Systems, methods, and devices that employ deterministic programming techniques to facilitate efficient programming of memory elements in a memory are presented. A memory component comprises an optimized program component that can divide a group of memory elements selected for programming into a desired number of subgroups based in part on respective current threshold voltage levels (Vt) of the memory elements; apply respective program pulses to each memory element in respective subgroups; measure respective Vt levels of memory elements after the pulse; and verify as passed memory elements that meet a target Vt. The optimized program component can divide a subset of memory elements that do not meet the target Vt into a desired number of subgroups based in part on respective current Vt levels of the memory elements and can continue to perform this deterministic programming process until all memory elements are verified as passing for the target Vt.

Abstract: Efficient and convenient storage systems and methods are presented. In one embodiment, a fractured erase process is performed in which a pre-program process, erase process and soft program process are initiated independently. Memory cells can be pre-programmed and conditioned independent of an erase command. The initiation of the independent pre-programming is partitioned from an erase command which is partitioned from initiation of a soft-programming command. A cell is erased wherein the erasing includes erase operations that are partitioned from the pre-preprogramming process. In one embodiment, the independent pre-program process is run in the background.

Abstract: Systems, methods, and devices that employ deterministic programming techniques to facilitate efficient programming of memory elements in a memory are presented. A memory component comprises an optimized program component that can divide a group of memory elements selected for programming into a desired number of subgroups based in part on respective current threshold voltage levels (Vt) of the memory elements; apply respective program pulses to each memory element in respective subgroups; measure respective Vt levels of memory elements after the pulse; and verify as passed memory elements that meet a target Vt. The optimized program component can divide a subset of memory elements that do not meet the target Vt into a desired number of subgroups based in part on respective current Vt levels of the memory elements and can continue to perform this deterministic programming process until all memory elements are verified as passing for the target Vt.