Patents by Inventor Hai Peng Tan

Hai Peng Tan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High performance RF inductors and transformers using bonding technique
    Patent number: 7023315
    Abstract: A method of fabricating an inductor using bonding techniques in the manufacture of integrated circuits is described. Bonding pads are provided over a semiconductor substrate. Input/output connections are made to at least two of the bonding pads. A plurality of wire bond loops are made between each two of the bonding pads wherein the plurality of wire bond loops forms the inductor.
    Type: Grant
    Filed: May 29, 2003
    Date of Patent: April 4, 2006
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Kiat Seng Yeo, Hai Peng Tan, Jianguo Ma, Manh Anh Do, Kok Wai Johnny Chew
  • Integrated helix coil inductor on silicon
    Patent number: 6803848
    Abstract: A new structure and method is provided for the creation of an inductor on the surface of a silicon semiconductor substrate. The inductor is of a helix coil design having upper level and lower level conductors further having an axis whereby the axis of the helix coil of the inductor is parallel to the plane of the underlying substrate. Under the first embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is uniform. Under the second embodiment of the invention the height of the helix coil of the inductor of the invention is uniform while a ferromagnetic core is inserted between the upper and the lower level conductors of the helix coil. Under the third embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is non-uniform.
    Type: Grant
    Filed: October 15, 2002
    Date of Patent: October 12, 2004
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Kiat Seng Yeo, Hai Peng Tan, Jian Guo Ma, Manh Anh Do, Kok Wai Johnny Chew
  • Integrated vertical spiral inductor on semiconductor material
    Patent number: 6800533
    Abstract: A new structure is provided for the creation of an inductor on the surface of a silicon semiconductor substrate. The inductor is of spiral design and perpendicular to the plane of the underlying substrate. Conductor line width can be selected as narrow or wide, ferromagnetic material can be used to fill the spaces between the conductors of the spiral inductor. The spiral inductor of the invention can further by used in series or in series with conventional horizontal inductors.
    Type: Grant
    Filed: March 6, 2000
    Date of Patent: October 5, 2004
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Kiat Seng Yeo, Hai Peng Tan, Jian Guo Ma, Manh Anh Do, Kok Wai Johnny Chew
  • High performance RF inductors and transformers using bonding technique
    Patent number: 6586309
    Abstract: A method of fabricating an inductor using bonding techniques in the manufacture of integrated circuits is described. Bonding pads are provided over a semiconductor substrate. Input/output connections are made to at least two of the bonding pads. A plurality of wire bond loops are made between each two of the bonding pads wherein the plurality of wire bond loops forms the inductor.
    Type: Grant
    Filed: April 24, 2000
    Date of Patent: July 1, 2003
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Kiat Seng Yeo, Hai Peng Tan, Jianguo Ma, Manh Anh Do, Kok Wai Johnny Chew
  • Integrated helix coil inductor on silicon
    Patent number: 6535098
    Abstract: A new structure and method is provided for the creation of an inductor on the surface of a silicon semiconductor substrate. The inductor is of a helix coil design having upper level and lower level conductors further having an axis whereby the axis of the helix coil of the inductor is parallel to the plane of the underlying substrate. Under the first embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is uniform. Under the second embodiment of the invention the height of the helix coil of the inductor of the invention is uniform while a ferromagnetic core is inserted between the upper and the lower level conductors of the helix coil. Under the third embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is non-uniform.
    Type: Grant
    Filed: March 6, 2000
    Date of Patent: March 18, 2003
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Kiat Seng Yeo, Hai Peng Tan, Jian Guo Ma, Manh Anh Do, Kok Wai Johnny Chew
  • Integrated helix coil inductor on silicon
    Publication number: 20030043010
    Abstract: A new structure and method is provided for the creation of an inductor on the surface of a silicon semiconductor substrate. The inductor is of a helix coil design having upper level and lower level conductors further having an axis whereby the axis of the helix coil of the inductor is parallel to the plane of the underlying substrate. Under the first embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is uniform. Under the second embodiment of the invention the height of the helix coil of the inductor of the invention is uniform while a ferromagnetic core is inserted between the upper and the lower level conductors of the helix coil. Under the third embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is non-uniform.
    Type: Application
    Filed: October 15, 2002
    Publication date: March 6, 2003
    Applicant: CHARTERED SEMICONDUCTOR MANUFACTURING LTD.
    Inventors: Kiat Seng Yeo, Hai Peng Tan, Jian Guo Ma, Manh Anh Do, Kok Wai Johnny Chew
  • Integrated vertical spiral inductor on semiconductor material
    Publication number: 20030013264
    Abstract: A new structure is provided for the creation of an inductor on the surface of a silicon semiconductor substrate. The inductor is of spiral design and perpendicular to the plane of the underlying substrate. Conductor line width can be selected as narrow or wide, ferromagnetic material can be used to fill the spaces between the conductors of the spiral inductor. The spiral inductor of the invention can further by used in series or in series with conventional horizontal inductors.
    Type: Application
    Filed: September 3, 2002
    Publication date: January 16, 2003
    Applicant: CHARTERED SEMICONDUCTOR MANUFACTURING LTD.
    Inventors: Kiat Seng Yeo, Hai Peng Tan, Jian Guo Ma, Manh Anh Do, Kok Wai Johnny Chew