Abstract: In an ultraviolet LED chip, an epitaxial structure can be isolated into two insulated structures, i.e. a first and a second epitaxial structures by growing the epitaxial structure on a surface of a substrate, and arranging an insulating layer and a groove contacting layer in the middle of the epitaxial structure. The N-type AlGaN layer is stretched out through the groove contacting layer. In the ultraviolet LED chip, through the cooperation among the N electrode, P electrode and intermediate electrode on the base plate along with the first and second epitaxial structures, an LED and an ESD are formed respectively. The ESD is connect to the ends of LED in anti-parallel for providing an electrostatic discharging channel, so as to reduce the direct damage of the ultraviolet LED chip caused by electrostatic discharging, and increase a forward voltage of the LED and the antistatic intensity.

Abstract: In an ultraviolet LED chip, an epitaxial structure can be isolated into two insulated structures, i.e. a first and a second epitaxial structures by growing the epitaxial structure on a surface of a substrate, and arranging an insulating layer and a groove contacting layer in the middle of the epitaxial structure. The N-type AlGaN layer is stretched out through the groove contacting layer. In the ultraviolet LED chip, through the cooperation among the N electrode, P electrode and intermediate electrode on the base plate along with the first and second epitaxial structures, an LED and an ESD are formed respectively. The ESD is connect to the ends of LED in anti-parallel for providing an electrostatic discharging channel, so as to reduce the direct damage of the ultraviolet LED chip caused by electrostatic discharging, and increase a forward voltage of the LED and the antistatic intensity.