Abstract: A non-destructive testing method for an elastic modulus of fine ceramic, an apparatus, and a storage medium, including controlling intact fine ceramic to enter a first testing position, fixing the test sample, controlling an ultrasonic testing instrument to be adjusted to a position of the sample, performing ultrasonic testing e, and collecting testing data; adjusting the sample to a second testing position, performing resilience testing on the sample, and collecting resilience data; building a data model according to the testing data, or substituting the testing data into the pre-built data model to obtain elastic modulus characterization data of the test sample. The test sample does not need to be cut into small-size test samples and is not destroyed, and the intact fine ceramic is subjected to non-destructive testing. The accuracy of tested data is improved, damage to the test sample is also avoided, and reuse of the sample is realized.

Abstract: Methods for performing network configuration on apparatus and network configuration systems are provided. The method includes: receiving a network configuration request sent by a network configuration application, wherein the network configuration request includes hotspot information of an online hotspot; generating a hotspot switching command based on the network configuration request; and sending the hotspot switching command to an apparatus needing network configuration through a network configuration hotspot, to make the apparatus switch a hotspot that the apparatus currently connects to from the network configuration hotspot to the online hotspot.

Abstract: A display panel configured to display images is provided, each image including a plurality of image pixels and each image pixel including a plurality of sub-pixels of different colors, respectively, the display panel including: a base substrate; and a plurality of sub-beam generation components on the base substrate, each sub-beam generation component being configured to generate at least one sub-pixel in at least one image pixel of the image pixels and including: a group of light-emitting units comprising at least one light-emitting unit and corresponding to at least one sub-pixel; and a beam-expanding layer, which is arranged on a light emergent side of the group of light-emitting units and configured to expand light beams emitted from the group of light-emitting units; an orthogonal projection of the beam-expanding layer on the base substrate at least partially overlapping with an orthogonal projection of the group of light-emitting units on the base substrate.

Abstract: The invention provides a composite-coated nano-tin negative electrode material, which comprises a tin-based nanomaterial, a nano-copper layer coated on the surface of the tin-based nanomaterial and a conductive protective layer coated on the surface of the nano-copper layer. The nano-copper layer can inhibit the volume expansion of nano-tin, keep the nano-tin material from cracking, avoid direct contact between nano-tin and electrolyte to form stable SEI and increase the conductivity of the electrode. Coating a conductive layer on the surface of the nano-copper layer can effectively inhibit the oxidation of nano-copper, thus improving its electrochemical performance. The composite-coated nano-tin negative electrode material according to the invention is used as a negative electrode material of a lithium-ion battery, has excellent electrochemical performance, and has potential application prospects in portable mobile devices and electric vehicles.

Abstract: This invention relates to a double layer composite-coated nano-silicon negative electrode material, and its preparation methods and use, the negative electrode material comprising: a silicon-based nanoparticle, a copper layer coated on the surface of the silicon-based nanoparticle, and a conductive protective layer coated on the surface of the copper layer. Nano-copper has superplastic ductility and conductivity, and the prior art has proved that lithium ions can penetrate nano-copper; therefore, the copper coating layer has effects of inhibiting the volume expansion of the silicon-based nanoparticle and keeping the silicon-based nanoparticle from cracking so that direct contact between the silicon-based nanoparticle and an electrolyte is effectively avoided and a stable SEI is formed, and increasing the conductivity of the electrode.

Abstract: Provided are a display method, display optimization apparatus, electronic device and storage medium. The display method includes: obtaining position information of N user eyes and original grayscale data of an image to be displayed, wherein N is a positive integer greater than 1; determining N pixel correspondences corresponding to the position information of N user eyes one-to-one based on the position information of N user eyes, wherein a pixel correspondence corresponding to position information of each user eye is a correspondence between pixels in a light control panel and pixels in a liquid crystal display panel under an angle of view corresponding to the position information of the user eye; adjusting original grayscale data according to N pixel correspondences to obtain target grayscale data; and outputting original grayscale data to the liquid crystal display panel and the target grayscale data to the light control panel to perform display.

Abstract: Methods for performing network configuration on apparatus and network configuration systems are provided. The method includes connecting, by an apparatus, to a network configuration hotspot provided by a router; sending first apparatus information of the apparatus to a server through the network configuration hotspot; receiving a hotspot switching command sent by the server according to the first apparatus information, wherein the hotspot switching command includes hotspot information of an online hotspot; and when a designated network configuration condition is met, connecting to the online hotspot based on the hotspot switching command to complete the network configuration of the apparatus.

Abstract: An apparatus for controlling a degradation rate of an artificial bone in vitro, a degradation method, and an artificial bone are disclosed. The apparatus includes: a variable resistor; and a wearable component, comprising: a metal wire electrically connected in series with the variable resistor and configured to generate an alternating magnetic field; and an insulating textile layer by which the outside of the metal wire is covered.

Abstract: A semiconductor structure and a fabrication method of the semiconductor structure are provided. The method includes providing a substrate, forming a first dielectric layer and a plurality of gate structures, forming source-drain doped regions, and forming a source-drain plug. The first dielectric layer covers surfaces of the gate structure, the source-drain doped region and the source-drain plug. The method also includes forming a first plug in the first dielectric layer, and forming a second dielectric layer on the first dielectric layer. The first plug is in contact with a top surface of one of the source-drain plug and the gate structure. The second dielectric layer covers the first plug. Further, the method includes forming a second plug material film in the first and second dielectric layers. The second plug material film is in contact with the top surface of one of the source-drain plug and the gate structure.

Abstract: A backlight assembly and a display device including the backlight assembly are provided. The backlight assembly includes a light source unit, a peep-proof layer on a light emitting side of the light source unit, a light adjustment layer on a side of the peep-proof layer distal to the light source unit, and a plurality of first microstructures between the peep-proof layer and the light adjustment layer and spaced apart from each other.

Abstract: The present invention provides a sulfur-based positive electrode active material for use in a solid-state battery, comprising: 30-80 wt % of Li2S, 10-40 wt % of one or more second lithium compounds selected from LiI, LiBr, LiNO3, and LiNO2, and 0-30 wt % of a conductive carbon material; a method for preparing the sulfur-based positive electrode active material, a positive electrode including the sulfur-based positive electrode active material, and a solid-state battery including the positive electrode. The sulfur-based positive electrode active material and the positive electrode provide a high specific capacity and an increased discharge voltage.

Abstract: The embodiments of the resent disclosure provide a display pane, a manufacturing method thereof, and a display device. The display panel includes a first substrate and a second substrate cell-assembled to each other, a light emitting member layer disposed between the first substrate and the second substrate and a light diffusion layer disposed on a light exiting side of the light emitting member layer, the light emitting member layer includes a plurality of light emitting units and imaging holes disposed on at least two sides of each of the light emitting units, the light diffusion layer includes a reflective member configured to reflect a light ray emitted by the light emitting unit and reaching the reflective member, and the reflected light ray reflected by the reflective member exits from the imaging holes.

Abstract: A semiconductor structure and its fabrication method are provided. The method includes: providing a substrate and a first metal layer in the substrate; forming a dielectric layer with a first opening exposing a portion of a top surface of the first metal layer on the substrate; bombarding the portion of the top surface of the first metal layer exposed by the first opening, by using a first sputtering treatment, to make metal materials on the top surface of the first metal layer be sputtered onto sidewalls of the first opening to form a first adhesion layer; and forming a second metal layer on a surface of the first adhesion layer and on the exposed portion of the top surface of the first metal layer using a first metal selective growth process.

Abstract: A semiconductor device and method for forming same are provided. The method for forming a semiconductor device includes: providing a base; forming an interlayer dielectric layer over the base; forming contact holes by etching the interlayer dielectric layer; forming a barrier layer over the base in the contact holes; and forming a metal layer over the barrier layer. The contact holes exposed a portion of a surface of the base. The metal layer fully filled the contact hole.

Abstract: A method for forming a semiconductor structure includes providing an initial semiconductor structure formed in a substrate; forming a dielectric layer on the substrate; forming a first opening in the dielectric layer to expose a portion of the initial semiconductor structure; etching the portion of the initial semiconductor structure exposed at a bottom of the first opening to form a second opening in the initial semiconductor structure; and forming a contact layer in the second opening and a third opening in the contact layer. The contact layer has a concave top surface, and the third opening is located above the concave top surface of the contact layer and under the first opening. The method further includes forming a conductive structure in the first opening and the third opening.

Abstract: A method for genetic transformation of edible mushrooms is provided relating to the technical field of genetic transformation of Agaricus bisporus, enoki mushroom and shiitake. The disclosed method for genetic transformation of Agaricus bisporus includes: inoculating Agaricus bisporus liquid mycelia into a foxtail-millet-grain culture medium, and pre-culturing them at 20-25° C. until Agaricus bisporus mycelia grow on surfaces of foxtail millet grains. This method uses the foxtail millet grains as an attachment matrix, and during the pre-culturing and co-culturing, the culture substrate is shaken up every day. The method for genetic transformation of enoki mushroom or shiitake includes: inoculation of enoki mushroom mycelia or shiitake mycelia, activated culturing of agrobacterium, and agrobacterium infecting a foxtail millet grain-enoki mushroom mycelium matrix or a foxtail millet grain-shiitake mycelium matrix.

Abstract: Methods for performing network configuration on apparatus and network configuration systems are provided. The method includes connecting, by an apparatus, to a network configuration hotspot provided by a router; sending first apparatus information of the apparatus to a server through the network configuration hotspot; receiving a hotspot switching command sent by the server according to the first apparatus information, wherein the hotspot switching command includes hotspot information of an online hotspot; and when a designated network configuration condition is met, connecting to the online hotspot based on the hotspot switching command to complete the network configuration of the apparatus.

Abstract: A display panel which is configured to display images is provided in embodiments of the disclosure, each image including a plurality of image pixels and each image pixel including a plurality of sub-pixels of different colors, respectively, the display panel including: a base substrate; and a plurality of sub-beam generation components on the base substrate, each sub-beam generation component being configured to generate at least one sub-pixel in at least one image pixel of the plurality of image pixels and including: a group of light-emitting units comprising at least one light-emitting unit and corresponding to at least one sub-pixel; and a beam-expanding layer, which is arranged on a light emergent side of the group of light-emitting units and configured to expand light beams emitted from the group of light-emitting units; an orthogonal projection of the beam-expanding layer on the base substrate at least partially overlapping with an orthogonal projection of the group of light-emitting units on the base s

Abstract: Disclosed herein is an ingestible composition comprising a sphingan and its use as a prebiotic.

Abstract: This invention relates to a double layer composite-coated nano-silicon negative electrode material, and its preparation methods and use, the negative electrode material comprising: a silicon-based nanoparticle, a copper layer coated on the surface of the silicon-based nanoparticle, and a conductive protective layer coated on the surface of the copper layer. Nano-copper has superplastic ductility and conductivity, and the prior art has proved that lithium ions can penetrate nano-copper; therefore, the copper coating layer has effects of inhibiting the volume expansion of the silicon-based nanoparticle and keeping the silicon-based nanoparticle from cracking so that direct contact between the silicon-based nanoparticle and an electrolyte is effectively avoided and a stable SEI is formed, and increasing the conductivity of the electrode.