Patents by Inventor Haipeng YIN

Haipeng YIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11961930
    Abstract: The present disclosure relates to the technical field of solar cells, and relates to a crystalline silicon solar cell and a preparation method thereof, and a photovoltaic assembly. The crystalline silicon solar cell includes a crystalline silicon substrate, a passivation layer that is disposed on the crystalline silicon substrate and that is provided with through holes, a carrier collection layer that is disposed on the passivation layer, and electrodes that contact the carrier collection layer; the carrier collection layer contacts the crystalline silicon substrate by means of the through holes on the passivation layer. In the described crystalline silicon solar cell, through holes are provided on the passivation layer, and the carrier collection layer contacts the crystalline silicon substrate by means of the through holes on the passivation layer.
    Type: Grant
    Filed: June 28, 2019
    Date of Patent: April 16, 2024
    Assignee: JINGAO SOLAR CO., LTD.
    Inventors: Haipeng Yin, Wei Shan, Kun Tang
  • Patent number: 11444212
    Abstract: A crystalline silicon solar cell includes a gallium oxide layer in direct contact with a P-type silicon layer in the crystalline silicon solar cell. The gallium oxide layer is arranged on the P-type silicon layer of the crystalline silicon solar cell, negative charges of the gallium oxide layer are used to carry out chemical passivation and field passivation on a surface of the P-type silicon layer, and the number of dangling bonds and minority carriers of silicon atoms on the surface of the P-type silicon layer is reduced, so that a minority carrier recombination rate at the surface of the P-type silicon layer is reduced. In addition, the gallium oxide layer has a relatively wide band gap and an appropriate optical refractive index.
    Type: Grant
    Filed: June 21, 2019
    Date of Patent: September 13, 2022
    Assignee: JINGAO SOLAR CO., LTD.
    Inventors: Xiaoye Chen, Wenjuan Xue, Xiulin Jiang, Haipeng Yin
  • Publication number: 20220029040
    Abstract: The present disclosure relates to the technical field of solar cells, and relates to a crystalline silicon solar cell and a preparation method thereof, and a photovoltaic assembly. The crystalline silicon solar cell includes a crystalline silicon substrate, a passivation layer that is disposed on the crystalline silicon substrate and that is provided with through holes, a carrier collection layer that is disposed on the passivation layer, and electrodes that contact the carrier collection layer; the carrier collection layer contacts the crystalline silicon substrate by means of the through holes on the passivation layer. In the described crystalline silicon solar cell, through holes are provided on the passivation layer, and the carrier collection layer contacts the crystalline silicon substrate by means of the through holes on the passivation layer.
    Type: Application
    Filed: June 28, 2019
    Publication date: January 27, 2022
    Applicant: JINGAO SOLAR CO., LTD.
    Inventors: Haipeng YIN, Wei SHAN, Kun TANG
  • Publication number: 20210217907
    Abstract: The disclosure relates to a crystalline silicon solar cell and a preparation method, and a photovoltaic module, belonging to the technical field of solar cells. The crystalline silicon solar cell includes a gallium oxide layer in direct contact with a P-type silicon layer in the crystalline silicon solar cell.
    Type: Application
    Filed: June 21, 2019
    Publication date: July 15, 2021
    Inventors: Xiaoye CHEN, Wenjuan XUE, Xiulin JIANG, Haipeng YIN