Abstract: Provided are a detection method and a detection device, the detection method includes: in a first writing stage, providing an active voltage to each data line, each power supply terminal, both ends of a first gate line to-be-detected, an absolute value of the active voltage of each data line is smaller than that of the active voltage of the power supply terminal, an absolute value of the active voltage of the first gate line to-be-detected is smaller than that of the active voltage of each data line; in a first detection stage, maintaining the active voltage of the power supply terminal, providing an inactive voltage to the first gate line to-be-detected and providing an active voltage to the data line, detecting voltages at second electrodes of storage capacitors corresponding to the first gate line to-be-detected, determining whether the first gate line to-be-detected has breakpoint according to the detected voltages.

Abstract: A recombinant fusion protein comprising a human erythropoietin peptide portion linked to an immunoglobulin peptide portion is described. The fusion protein has a prolonged half-life in vivo in comparison to naturally occurring or recombinant native human erythropoietin. In one embodiment of the invention, the protein has a half-life in vivo at least three fold higher than native human erythropoietin. The fusion protein also exhibits enhanced erythropoietic bioactivity in comparison to native human erythropoietin. In one embodiment, the fusion protein comprises the complete peptide sequence of a human erythropoietin (EPO) molecule and the peptide sequence of an Fc fragment of human immunoglobulin IgG1. The Fc fragment in the fusion protein includes the hinge region, CH2 and CH3 domains of human immunoglobulin IgG1. The EPO molecule may be linked directly to the Fc fragment to avoid extraneous peptide linkers and lessen the risk of an immunogenic response when administered in vivo.

Abstract: The disclosure provides a display substrate, a method for fabricating the same, a display device. The display substrate includes a base and a display function layer on the base. The display function layer includes pixel circuits arranged in first and second directions, and data lines in the second direction. Each pixel circuit includes a driving capacitor and a driving transistor, a first electrode of the driving capacitor is in a same layer as the data lines; at least one data line includes at least one first sub-data line segment and at least one second sub-data line segment, a width of the first sub-data line segment is less than that of the second sub-data line segment, an orthographic projection of the first sub-data line on a virtual straight line in the second direction at least partially overlaps with that of the first electrode closest thereto on the virtual straight line.

Abstract: An authentication server may not support all types of user credentials. For example, an on-premise authentication server may support credentials based on user secrets (i.e. username and password) and certificate-based credentials, but not hardware-key based credentials. A client device may use an un-supported type of credential to access resources managed by the on-premise authentication server by authenticating with a web-based authentication server. The web-based authentication server may support any type of credential, and the supported types of credentials may change over time. The web-based authentication server returns an authenticated user token indicating the user has been authenticated, but without authorizing access to any resources. The client device uses the on-premise authentication server to exchange the authenticated user token for an authorized user token. The client device then uses the authorized user token to access resources on the on-premise network.

Abstract: The present application provides a BJT device structure and a method for making the same, the structure comprising an N+ region located on a P-well; a barrier layer structure located on the N+ region, the barrier layer structure being a frame structure surrounding the periphery of the N+ region, wherein a region in the barrier layer structure is an emitter region, a plurality of mutually spaced STI regions are provided on the N+ region of the emitter region; a base region located at the periphery of the emitter region; and a collector region located at the periphery of the base region. The STI region of the emitter region of the BJT device structure of the present application is a discontinuous structure, which can significantly reduce a recombination current of the emitter region and the base region, thereby effectively increasing the amplification factor of the BJT device.

Abstract: Methods and apparatus for dechucking a wafer from a surface of an electrostatic chuck (ESC). In some embodiments, a method comprises reducing a pressure of a gas applied to a backside of the wafer to approximately zero psi; reducing a downward pressure in a cylinder bore of a lifting actuator to approximately atmospheric pressure while a processing volume of the processing chamber is in a vacuum state to create a constant upward force on the wafer, the constant upward force less than a breaking force of the wafer; and sweeping a voltage applied to the ESC to dechuck the wafer; and monitoring a sensor on the lifting actuator that is interposed between a chucking position of the lifting actuator and a transfer position of the lifting actuator to detect when the wafer is dechucked.

Abstract: Embodiments of the present disclosure provide a method and a device for detecting a threshold voltage drift of a transistor in a pixel circuit, which are used for detecting the threshold voltage drift of the transistor to be detected in the pixel circuit. The transistor to be detected is at least one of the driving transistor and the detection transistor. The detection method comprises: inputting, during an inputting stage, a first turning-on voltage to the second scanning terminal, so as to turn on the detection transistor, enabling writing a first voltage into the second node through the detection signal terminal; inputting, during a detection stage, a first turning-off voltage to the second scanning terminal, so as to turn off the detection transistor, thereby detecting an actual voltage at the second node; and determining a state of the threshold voltage drift of the transistor to be detected according to the actual voltage and the first voltage.

Abstract: The present disclosure provides a display substrate, a method for preparing the same, and a display device including the display substrate. The method includes: forming a conductive layer; forming a first photoresist pattern and a second photoresist pattern on the conductive layer, in which the adhesion between the first photoresist pattern and the conductive layer is less than the adhesion between the second photoresist pattern and the conductive layer; and etching the conductive layer by using the first photoresist pattern and the second photoresist pattern as masks to form a first conductive pattern and a second conductive pattern, respectively, in which a line width difference between the first conductive pattern and the first photoresist pattern is greater than a line width difference between the second conductive pattern and the second photoresist pattern.

Abstract: Disclosed is a folding device, comprising: a first folding part, configured to fold, for a first time in a first direction, a folded object in half; a second folding part, configured to fold for a second time in a second direction in half, the folded object that has been folded in half for the first time, wherein the first direction is opposite to the second direction; a third folding part, configured to fold, for a third time in a third direction, one end of the folded object that has been folded in half for the second time, wherein the third direction is perpendicular to the second direction; a fourth folding part, configured to fold, for a fourth time in a fourth direction, the other end of the folded object that has been folded in half for the second time, where the fourth direction is opposite to the third direction.

Abstract: A workpiece carrier suitable for high power processes is described. It may include a puck to carry the workpiece, a plate bonded to the puck by an adhesive, a mounting ring surrounding the puck and the cooling plate, and a gasket between the mounting ring and the plate, the gasket configured to protect the adhesive.

Abstract: The present disclosure provides a display substrate, a method for manufacturing the display substrate, and a display device. The display substrate includes a first conductive line extending in a first direction on a base substrate, a second conductive line extending in a second direction crossing the first direction on the base substrate, and an insulation layer arranged between the first conductive line and the second conductive line. The display substrate further includes a buffer layer arranged between the first conductive line and the base substrate, a groove extending in the first direction is formed in the buffer layer, the first conductive line is arranged in the groove, and a surface of the first conductive line away from the base substrate is flush with a surface of the buffer layer away from the base substrate.

Abstract: Disclosed are an electrical penetration assembly, a manufacturing method thereof, and an electrical penetration device, which relate to the technical field of electrical penetration.

Abstract: A method of detecting threshold voltage shift and a threshold voltage shift detection device are provided. The method is applied to a pixel driving circuit which I is electrically coupled to a control line, a voltage line and a detection node, respectively. The method includes: in a detection cycle including a setting phase and a detection phase, in the setting phase, controlling a transistor included in the pixel driving circuit to be in a biased state; in the detection phase, providing a preset control voltage signal to the control line, providing a preset voltage signal to the voltage line, and determining a threshold voltage shift state of the transistor according to an electric potential of the detection node.

Abstract: An authentication server may not support all types of user credentials. For example, an on-premise authentication server may support credentials based on user secrets (i.e. username and password) and certificate-based credentials, but not hardware-key based credentials. A client device may use an un-supported type of credential to access resources managed by the on-premise authentication server by authenticating with a web-based authentication server. The web-based authentication server may support any type of credential, and the supported types of credentials may change over time. The web-based authentication server returns an authenticated user token indicating the user has been authenticated, but without authorizing access to any resources. The client device uses the on-premise authentication server to exchange the authenticated user token for an authorized user token. The client device then uses the authorized user token to access resources on the on-premise network.

Abstract: A display substrate, a method for manufacturing the display substrate, and a display device are provided. The display substrate includes a display area and a fanout area at the periphery of the display area. The fanout area includes a data line layer, a first power line layer, and at least two insulation layers between the data line layer and the first power line layer. In a direction perpendicular to a base substrate of the display substrate, the first power line layer overlaps the data line layer. At least one of the at least two insulation layers includes a portion which insulates the first power line layer and the data line layer from each other.

Abstract: A thin film transistor, a display panel and a preparation method thereof and a display apparatus are provided. The thin film transistor includes: a substrate; a gate metal located on a side of the substrate; a gate insulating layer located on a side of the gate metal away from the substrate; an active layer located on a side of the gate insulating layer away from the substrate; a first metal oxide and a second metal oxide which are located on a side of the active layer away from the substrate and are arranged on a same layer; and a source metal and a drain metal which are located on sides of the first metal oxide and the second metal oxide away from the substrate and are arranged in a same layer.

Abstract: A fusion protein having a non-immunoglobulin polypeptide having a cysteine residue proximal to the C terminal thereof, and an immunoglobulin component with a mutated hinge region is provided. The mutation comprises a point mutated site corresponding in position to the position in a native hinge region of the cysteine residue located nearest the cysteine residue of the non-Ig component. The distance from the cysteine residue of the non-immunoglobulin polypeptide and any remaining cysteine residues of the mutated hinge region is sufficient to prevent the formation of a disulphide bond therebetween.

Abstract: Methods and devices for using candidate accounts on a computer device may include creating on the computer device, a candidate account representing a blank user profile for use on the computer device. The methods and devices may include automatically logging in the candidate account and locking the computer device. The methods and devices may include creating a user specific isolated environment on the computer device for the candidate account.

Abstract: The present disclosure provides a thin film transistor, a thin film transistor array, and a method for detecting an object to be detected, wherein the thin film transistor is configured to detect a parameter of an object to be detected bound with a metal ion and includes an active layer, wherein: a carrier of the active layer without a metal element contained in the metal ion bound is of a first mobility, and a carrier of the active layer with the metal element bound is of a second mobility different from the first mobility.