Abstract: This invention involves structure and fabrication method of a black silicon-based MEMS thermopile IR detector. The high-performance black silicon-based MEMS thermopile IR detector includes a substrate; a releasing barrier band on the substrate; a thermal isolation cavity constructed by the releasing barrier band; a black silicon-based IR absorber located right above the thermal isolation cavity; a number of thermocouples are set around the lateral sides of the black silicon-based IR absorber. The thermopiles around the black silicon-based IR absorber are electrically connected in series thus to form a thermopile. Metallic electrodes are located beside the electrically-connected thermopiles for signal output. The cold junctions of the thermopile are connected to the substrate through the first thermal-conductive-electrical-isolated structures, the heat conductor is located at the lateral sides of the thermal isolation cavity.

Abstract: The invention involves structure and fabrication method of a high performance IR detector. The structure comprises a substrate; a releasing barrier band on the substrate; a thermal isolation chamber constructed by the releasing barrier band; a black silicon-based IR absorber located right above the thermal isolation chamber and the black silicon-based IR absorber is set on the releasing barrier band; a number of thermocouples are set around the lateral sides of the black silicon-based IR absorber. The thermopiles around the black silicon-based IR absorber are electrically connected in series. The cold junctions of the thermopile are connected to the substrate through the first thermal-conductive-electrical-isolated structures as well as the heat conductor under the first thermal-conductive-electrical-isolated structures.

Abstract: This invention involves structure and fabrication method of a black silicon-based MEMS thermopile IR detector. The high-performance black silicon-based MEMS thermopile IR detector includes a substrate; a releasing barrier band on the substrate; a thermal isolation cavity constructed by the releasing barrier band; a black silicon-based IR absorber located right above the thermal isolation cavity; a number of thermocouples are set around the lateral sides of the black silicon-based IR absorber. The thermopiles around the black silicon-based IR absorber are electrically connected in series thus to form a thermopile. Metallic electrodes are located beside the electrically-connected thermopiles for signal output. The cold junctions of the thermopile are connected to the substrate through the first thermal-conductive-electrical-isolated structures, the heat conductor is located at the lateral sides of the thermal isolation cavity.

Abstract: The invention involves structure and fabrication method of a high performance IR detector. The structure comprises a substrate; a releasing barrier band on the substrate; a thermal isolation chamber constructed by the releasing barrier band; a black silicon-based IR absorber located right above the thermal isolation chamber and the black silicon-based IR absorber is set on the releasing barrier band; a number of thermocouples are set around the lateral sides of the black silicon-based IR absorber. The thermopiles around the black silicon-based IR absorber are electrically connected in series. The cold junctions of the thermopile are connected to the substrate through the first thermal-conductive-electrical-isolated structures as well as the heat conductor under the first thermal-conductive-electrical-isolated structures.