Abstract: Exemplary Embodiments of the invention address the problem of providing semiconductor single-layer carbon nanotubes in which the light emission energy thereof is lowered by approximately 300 meV, and a method for manufacturing the same. In one embodiment of the invention, by applying a method for directly irradiating semiconductor single-layer carbon nanotubes with ultraviolet light in atmospheric air, ozone is generated in the atmosphere, a gram amount of oxygen atoms is introduced to the semiconductor single-layer carbon nanotubes, and semiconductor single-layer carbon nanotubes in which the light emission energy thereof is lowered by approximately 300 meV.

Abstract: To provide a method and apparatus for production of a nitrogen compound film by a plasma, wherein the method and apparatus are suitable for area enlargement by a process at a higher pressure with lower power consumption, without applying a voltage to a base material, and without using a large chamber. In nitrogen compound production for producing a nitrogen compound by generating a microwave plasma, in a step of jetting a material gas containing a nitrogen-based gas onto a surface of a base material from a nozzle under flow rate control while applying a microwave to the material gas to thereby irradiate the surface of the base material with a plasma containing nitrogen-based reactive species generated from the material gas, the pressure is set higher than a pressure at which the mean free path of ions in the plasma is shorter than the Debye length.

Abstract: [Problem] To provide a microwave plasma treatment apparatus that is not provided with complicated, long gas flow paths inside a dielectric substrate, to stabilize generation and retention of a plasma, and can generate a highly uniform, high-density, stable low-temperature plasma not only at low atmospheric pressures but also at middle atmospheric pressures and high atmospheric pressures. [Solution] In a micro plasma treatment apparatus including a dielectric substrate, a microwave introducing section, a microstrip line, an earth conductor, a gas inlet, a plasma generating section, and a nozzle for blowing out a plasma, the gas inlet is provided at the earth conductor or the microstrip line, and the gas inlet is provided with a diameter preferably smaller than a cut-off wavelength determined depending on a cross-section of the gas inlet, to prevent leakage of a microwave.

Abstract: Exemplary Embodiments of the invention address the problem of providing semiconductor single-layer carbon nanotubes in which the light emission energy thereof is lowered by approximately 300 meV, and a method for manufacturing the same. In one embodiments of the invention, by applying a method for directly irradiating semiconductor single-layer carbon nanotubes with ultraviolet light in atmospheric air, ozone is generated in the atmosphere, a gram amount of oxygen atoms is introduced to the semiconductor single-layer carbon nanotubes, and semiconductor single-layer carbon nanotubes in which the light emission energy thereof is lowered by approximately 300 meV.

Abstract: A plasma treatment equipment includes: a plasma starting and stabilizing unit (A) having an insulating material such as a dielectric material having an elongated hole connecting to a plasma ejection portion, a triggering and discharge-stabilizing electrode, and an intense electric field electrode mounted thereon; and a plasma generating unit (B) including the insulating material having the elongated hole and a plasma generating electrode configured to perform main plasma generation at the time of operation, wherein the triggering and discharge-stabilizing electrode, the intense electric field electrode, and the plasma generating electrode are provided in such a manner that all the electrodes are not exposed and covered with the dielectric material for the entire space of one or more of the elongated hole which allows passage of gas from the upstream, starting of the plasma and generation of the plasma, and ejection of the plasma jet.

Abstract: This technique provides a protein film production method which can form a protein film, with denaturation of protein being prevented. The protein film production method includes mixing a protein with an aqueous solvent, to thereby form an aqueous protein solution PAS1, and treating the aqueous protein solution PAS1 with plasma generated by a plasma generator 100. The plasma generated by the plasma generator 100 has a plasma density of 1×1013 cm?3 to 1×1015 cm?3.

Abstract: To provide microwave excitation plasma processing device capable of generating wide-width plasma jet having high uniformity, high density, and low temperature even under intermediate pressure and high pressure. The microwave plasma processing device includes: dielectric substrate; tapered portion provided in one end portion of the dielectric substrate, the tapered portion being shaped so that thickness of the dielectric substrate becomes gradually smaller; microstrip line; ground conductor; microwave input portion; gas input port configured to input gas into the dielectric substrate; plasma generating portion; gas flow widening portion provided inside the dielectric substrate and configured to supply wide-width gas flow having uniform flow velocity to the plasma generating portion, the gas flow widening portion being formed to make a gas flow width wider as the gas flow advances; gas flow channel configured to supply the gas to the gas flow widening portion; and nozzle for blowing plasma.

Abstract: The present invention provides a plasma evaluation system and method for evaluating plasma, including: a treatment target material and a weak current measurement unit including a resistor unit and a differential amplifier, wherein the treatment target material is connected to the weak current measurement unit via a treatment target side measurement terminal, the resistor unit of the weak current measurement unit is connected to a ground side of a plasma generation current source, and the system and method evaluate plasma by receiving plasma generated by a plasma treatment equipment with the treatment target material, measuring a current by measuring a voltage across resistors of the resistor unit through the differential amplifier, and measuring an output voltage of the plasma generation power source.

Abstract: [Problem] To provide a system and a method for objectively evaluating plasma by easily measuring a current generated by a plasma treatment equipment for medical purposes, etc., and a current flowing through a living body, etc. [Solution] A plasma evaluation system and method for evaluating plasma, including: a treatment target material; and a weak current measurement unit including a resistor unit and a differential amplifier, wherein the treatment target material is connected to the weak current measurement unit via a treatment target side measurement terminal, the resistor unit of the weak current measurement unit is connected to a ground side of a plasma generation current source, and the system and method evaluate plasma by receiving plasma generated by a plasma treatment equipment with the treatment target material, measuring a current by measuring a voltage across resistors of the resistor unit through the differential amplifier, and measuring an output voltage of the plasma generation power source.

Abstract: A plasma treatment equipment includes: a plasma starting and stabilizing unit (A) having an insulating material such as a dielectric material having an elongated hole connecting to a plasma ejection portion, a triggering and discharge-stabilizing electrode, and an intense electric field electrode mounted thereon; and a plasma generating unit (B) including the insulating material having the elongated hole and a plasma generating electrode configured to perform main plasma generation at the time of operation, wherein the triggering and discharge-stabilizing electrode, the intense electric field electrode, and the plasma generating electrode are provided in such a manner that all the electrodes are not exposed and covered with the dielectric material for the entire space of one or more of the elongated hole which allows passage of gas from the upstream, starting of the plasma and generation of the plasma, and ejection of the plasma jet.