Abstract: A photoelectric conversion device includes pixels each including a photoelectric conversion unit for generating charge by photoelectric conversion, first to fourth charge holding portions configured to be transferred charge from the photoelectric conversion unit, and an output unit for outputting a signal corresponding to charge transferred from one of the first to fourth charge holding portions, and a control circuit for controlling the plurality of pixels. The control circuit performs, during one frame, transferring charge in the photoelectric conversion unit to the first or second charge holding portion a plural times for each of the first and second charge holding portions in each of the pixels at the same time, and performs, during the one frame, reading out from each pixel a signal corresponding to charge in the third charge holding portion and a signal corresponding to charge in the fourth charge holding portion.

Abstract: A storage target includes a dielectric storage medium in the form of a relatively rigid sheet of insulating material having high density, such as a single crystal sheet of sapphire. A film electrode is formed, as by vapor deposition of nickel or like conductive material, on one of the surfaces of the storage medium. An array of openings are defined by and extend through the storage medium and film electrode. In some embodiments the collector electrode of a direct-view storage tube is formed on the other surface of the storage medium, also as by vapor deposition of nickel and subsequent etching.

Abstract: A storage target having a collector electrode formed in a striped or latticed pattern on a storage substrate which is fabricated from a single crystal of electrically insulating material. Preferably, the storage substrate is of a single rhombohedral crystal of aluminum oxide or of a single isometric crystal of magnesium oxide, spinel, or calcium fluoride.

Abstract: A charge storage tube includes a target comprising a semiconductor substrate, an insulating layer formed on the semiconductor substrate and a metal electrode formed on the insulating layer, wherein a target potential of the target can be changed so that it becomes not only below a first cross-over potential but also over the first cross-over potential. In the charge storage tube, a signal is written in the target by a signal writing means to generate pairs of electron-hole in the target, a surface potential of the insulating layer with the written signal is changed so as to become over the first cross-over potential, and the written signal is read out by scanning electron beams on the target.