Patents by Inventor Hakeem Akinmade Yusuff

Hakeem Akinmade Yusuff has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and structure for reworking antireflective coating over semiconductor substrate
    Patent number: 8835307
    Abstract: A method and a structure for reworking an antireflective coating (ARC) layer over a semiconductor substrate. The method includes providing a substrate having a material layer, forming a planarization layer on the material layer, forming an organic solvent soluble layer on the planarization layer, forming an ARC layer on the organic solvent soluble layer, forming a pattern in the ARC layer, and removing the organic solvent soluble layer and the ARC layer with an organic solvent while leaving the planarization layer unremoved. The structure includes a substrate having a material layer, a planarization layer on the material layer, an organic solvent soluble layer on the planarization layer, and an ARC layer on the organic solvent soluble layer.
    Type: Grant
    Filed: May 10, 2012
    Date of Patent: September 16, 2014
    Assignee: International Business Machines Corporation
    Inventors: Hakeem Akinmade-Yusuff, John A. Fitzsimmons, Ranee Wai-Ling Kwong
  • Method for reworking antireflective coating over semiconductor substrate
    Patent number: 8288271
    Abstract: A method and a structure for reworking an antireflective coating (ARC) layer over a semiconductor substrate. The method includes providing a substrate having a material layer, forming a planarization layer on the material layer, forming an organic solvent soluble layer on the planarization layer, forming an ARC layer on the organic solvent soluble layer, forming a pattern in the ARC layer, and removing the organic solvent soluble layer and the ARC layer with an organic solvent while leaving the planarization layer unremoved. The structure includes a substrate having a material layer, a planarization layer on the material layer, an organic solvent soluble layer on the planarization layer, and an ARC layer on the organic solvent soluble layer.
    Type: Grant
    Filed: November 2, 2009
    Date of Patent: October 16, 2012
    Assignee: International Business Machines Corporation
    Inventors: Hakeem Akinmade Yusuff, John A. Fitzsimmons, Ranee Wai-Ling Kwong
  • METHOD AND STRUCTURE FOR REWORKING ANTIREFLECTIVE COATING OVER SEMICONDUCTOR SUBSTRATE
    Publication number: 20120231554
    Abstract: A method and a structure for reworking an antireflective coating (ARC) layer over a semiconductor substrate. The method includes providing a substrate having a material layer, forming a planarization layer on the material layer, forming an organic solvent soluble layer on the planarization layer, forming an ARC layer on the organic solvent soluble layer, forming a pattern in the ARC layer, and removing the organic solvent soluble layer and the ARC layer with an organic solvent while leaving the planarization layer unremoved. The structure includes a substrate having a material layer, a planarization layer on the material layer, an organic solvent soluble layer on the planarization layer, and an ARC layer on the organic solvent soluble layer.
    Type: Application
    Filed: May 10, 2012
    Publication date: September 13, 2012
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Hakeem Akinmade Yusuff, John A. Fitzsimmons, Ranee Wai-Ling Kwong
  • METHOD AND STRUCTURE FOR REWORKING ANTIREFLECTIVE COATING OVER SEMICONDUCTOR SUBSTRATE
    Publication number: 20120205786
    Abstract: A method and a structure for reworking an antireflective coating (ARC) layer over a semiconductor substrate. The method includes providing a substrate having a material layer, forming a planarization layer on the material layer, forming an organic solvent soluble layer on the planarization layer, forming an ARC layer on the organic solvent soluble layer, forming a pattern in the ARC layer, and removing the organic solvent soluble layer and the ARC layer with an organic solvent while leaving the planarization layer unremoved. The structure includes a substrate having a material layer, a planarization layer on the material layer, an organic solvent soluble layer on the planarization layer, and an ARC layer on the organic solvent soluble layer.
    Type: Application
    Filed: April 25, 2012
    Publication date: August 16, 2012
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Hakeem Akinmade-Yusuff, John A. Fitzsimmons, Ranee Wai-Ling Kwong
  • METHOD AND STRUCTURE FOR REWORKING ANTIREFLECTIVE COATING OVER SEMICONDUCTOR SUBSTRATE
    Publication number: 20110101507
    Abstract: A method and a structure for reworking an antireflective coating (ARC) layer over a semiconductor substrate. The method includes providing a substrate having a material layer, forming a planarization layer on the material layer, forming an organic solvent soluble layer on the planarization layer, forming an ARC layer on the organic solvent soluble layer, forming a pattern in the ARC layer, and removing the organic solvent soluble layer and the ARC layer with an organic solvent while leaving the planarization layer unremoved. The structure includes a substrate having a material layer, a planarization layer on the material layer, an organic solvent soluble layer on the planarization layer, and an ARC layer on the organic solvent soluble layer.
    Type: Application
    Filed: November 2, 2009
    Publication date: May 5, 2011
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Hakeem Akinmade Yusuff, John A. Fitzsimmons, Ranee Wai-Ling Kwong
  • METHOD FOR FORMING TRENCHES HAVING DIFFERENT WIDTHS AND THE SAME DEPTH
    Publication number: 20110039413
    Abstract: A lithographic material stack including a photo-resist and an organic planarizing layer is combined with an etch process that generates etch residues over a wide region from sidewalls of etched regions. By selecting the etch chemistry that produces deposition of etch residues from the organic planarizing layer over a wide region, the etch residue generated at the sidewalls of the wide trench is deposited over the entire bottom surface of the wide trench. An etch residue portion remains at the bottom surface of the wide trench when the organic planarizing layer is etched through in the first trench region. The etch residue portion is employed in the next step of the etch process to retard the etch rate in the wide trench, thereby producing the same depth for all trenches in the material layer into which the pattern of the lithographic material stack is transferred.
    Type: Application
    Filed: August 12, 2009
    Publication date: February 17, 2011
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Hakeem Akinmade-Yusuff, Samuel S. Choi