Patents by Inventor Hakeem B. S. Akinmade-Yusuff
Hakeem B. S. Akinmade-Yusuff has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8796150Abstract: A method and structure for transferring a lithographic pattern into a substrate includes forming a dielectric hardmask layer over a dielectric substrate. A metal hardmask layer is formed over the dielectric hardmask layer. A protective capping hardmask layer or capping film is formed over the metal hardmask layer, and a lithographic structure for pattern transfer is formed over the capping layer. A pattern is transferred into the dielectric substrate using the defined lithographic structure. The capping hardmask layer can be removed during subsequent processing.Type: GrantFiled: January 24, 2011Date of Patent: August 5, 2014Assignee: International Business Machines CorporationInventors: Hakeem B. S. Akinmade-Yusuff, Samuel Sung Shik Choi, Edward R. Engbrecht, John A. Fitzsimmons
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Patent number: 8771533Abstract: A dielectric material layer is deposited on exposed surfaces of a bonded structure that includes a first substrate and a second substrate. The dielectric material layer is formed on an exposed planar surface of a second substrate and the entirety of peripheral sidewalls of the first and second substrates. The dielectric material layer can be formed by chemical vapor deposition, atomic layer deposition, or plasma induced deposition. Further, the dielectric material layer seals the entire periphery of the interface between the first and second substrates. If a planar portion of the dielectric material layer can be removed by planarization to facilitate thinning of the bonded structure, the remaining portion of the dielectric material layer can form a dielectric ring.Type: GrantFiled: February 28, 2013Date of Patent: July 8, 2014Assignee: International Business Machines CorporationInventors: Mukta G. Farooq, Emily Kinser, Richard S. Wise, Hakeem B. S. Akinmade-Yusuff
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Patent number: 8679611Abstract: A dielectric material layer is deposited on exposed surfaces of a bonded structure that includes a first substrate and a second substrate. The dielectric material layer is formed on an exposed planar surface of a second substrate and the entirety of peripheral sidewalls of the first and second substrates. The dielectric material layer can be formed by chemical vapor deposition, atomic layer deposition, or plasma induced deposition. Further, the dielectric material layer seals the entire periphery of the interface between the first and second substrates. If a planar portion of the dielectric material layer can be removed by planarization to facilitate thinning of the bonded structure, the remaining portion of the dielectric material layer can form a dielectric ring.Type: GrantFiled: July 24, 2012Date of Patent: March 25, 2014Assignee: International Business Machines CorporationInventors: Mukta G. Farooq, Emily Kinser, Richard S. Wise, Hakeem B. S. Akinmade-Yusuff
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Publication number: 20120288687Abstract: A dielectric material layer is deposited on exposed surfaces of a bonded structure that includes a first substrate and a second substrate. The dielectric material layer is formed on an exposed planar surface of a second substrate and the entirety of peripheral sidewalls of the first and second substrates. The dielectric material layer can be formed by chemical vapor deposition, atomic layer deposition, or plasma induced deposition. Further, the dielectric material layer seals the entire periphery of the interface between the first and second substrates. If a planar portion of the dielectric material layer can be removed by planarization to facilitate thinning of the bonded structure, the remaining portion of the dielectric material layer can form a dielectric ring.Type: ApplicationFiled: July 24, 2012Publication date: November 15, 2012Applicant: International Business Machines CorporationInventors: Mukta G. Farooq, Emily Kinser, Richard S. Wise, Hakeem B.S. Akinmade-Yusuff
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Patent number: 8287980Abstract: A dielectric material layer is deposited on exposed surfaces of a bonded structure that includes a first substrate and a second substrate. The dielectric material layer is formed on an exposed planar surface of a second substrate and the entirety of peripheral sidewalls of the first and second substrates. The dielectric material layer can be formed by chemical vapor deposition, atomic layer deposition, or plasma induced deposition. Further, the dielectric material layer seals the entire periphery of the interface between the first and second substrates. If a planar portion of the dielectric material layer can be removed by planarization to facilitate thinning of the bonded structure, the remaining portion of the dielectric material layer can form a dielectric ring.Type: GrantFiled: October 29, 2009Date of Patent: October 16, 2012Assignee: International Business Machines CorporationInventors: Mukta G. Farooq, Emily Kinser, Richard S. Wise, Hakeem B. S. Akinmade-Yusuff
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Publication number: 20120187546Abstract: A method and structure for transferring a lithographic pattern into a substrate includes forming a dielectric hardmask layer over a dielectric substrate. A metal hardmask layer is formed over the dielectric hardmask layer. A protective capping hardmask layer or capping film is formed over the metal hardmask layer, and a lithographic structure for pattern transfer is formed over the capping layer. A pattern is transferred into the dielectric substrate using the defined lithographic structure. The capping hardmask layer can be removed during subsequent processing.Type: ApplicationFiled: January 24, 2011Publication date: July 26, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Hakeem B.S. Akinmade-Yusuff, Samuel Sung Shik Choi, Edward R. Engbrecht, John A. Fitzsimmons
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Patent number: 8138093Abstract: A lithographic material stack including a photo-resist and an organic planarizing layer is combined with an etch process that generates etch residues over a wide region from sidewalls of etched regions. By selecting the etch chemistry that produces deposition of etch residues from the organic planarizing layer over a wide region, the etch residue generated at the sidewalls of the wide trench is deposited over the entire bottom surface of the wide trench. An etch residue portion remains at the bottom surface of the wide trench when the organic planarizing layer is etched through in the first trench region. The etch residue portion is employed in the next step of the etch process to retard the etch rate in the wide trench, thereby producing the same depth for all trenches in the material layer into which the pattern of the lithographic material stack is transferred.Type: GrantFiled: August 12, 2009Date of Patent: March 20, 2012Assignee: International Business Machines CorporationInventors: Hakeem B. S. Akinmade-Yusuff, Samuel S. Choi
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Patent number: 8030157Abstract: A method of forming a trench in a semiconductor device formed of a substrate and a first layer formed over the substrate includes forming an initial trench that passes through the first layer to the substrate, the initial trench having a diameter that decreases from a first diameter to a second diameter, the second diameter being measured at a distance closer to the substrate than the first diameter; exposing the trench to a dopant via an orthogonal ion implant to form doped regions sidewalls of the trench; and etching the trench to remove at least some of the doped regions.Type: GrantFiled: May 18, 2010Date of Patent: October 4, 2011Assignee: International Business Machines CorporationInventors: Habib Hichri, Ahmad D. Katnani, Kaushik A. Kumar, Narender Rana, Richard S. Wise, Hakeem B. S. Akinmade-Yusuff
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Publication number: 20110104426Abstract: A dielectric material layer is deposited on exposed surfaces of a bonded structure that includes a first substrate and a second substrate. The dielectric material layer is formed on an exposed planar surface of a second substrate and the entirety of peripheral sidewalls of the first and second substrates. The dielectric material layer can be formed by chemical vapor deposition, atomic layer deposition, or plasma induced deposition. Further, the dielectric material layer seals the entire periphery of the interface between the first and second substrates. If a planar portion of the dielectric material layer can be removed by planarization to facilitate thinning of the bonded structure, the remaining portion of the dielectric material layer can form a dielectric ring.Type: ApplicationFiled: October 29, 2009Publication date: May 5, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Mukta G. Farooq, Emily Kinser, Richard S. Wise, Hakeem B.S. Akinmade-Yusuff
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Publication number: 20090283912Abstract: Methods for fabricating metal wiring layers of a semiconductor device are provided where damascene interconnect structures are formed in a BEOL process that incorporates a dielectric cap-open-first process to achieve hard mask retention and to control the gouging of a buffer oxide layer to prevent exposure of underlying features protected by the buffer oxide layer.Type: ApplicationFiled: October 1, 2008Publication date: November 19, 2009Inventors: Hakeem B.S. AKINMADE-YUSUFF, Kaushik A. Kumar, Anthony D. Lisi