Abstract: Interaction of acoustic waves in a piezoelectric-semiconductor resonant cavity with the charge carriers in the semiconductor layer can be directed toward amplification of the acoustic waves; such amplification scheme can be applied in building unilateral amplifiers, zero loss filters, oscillators, high detection range circuit-less wireless sensors, isolators, duplexers, circulators and other acoustic devices. An apparatus for acoustoelectric amplification is described. The apparatus includes a semiconductor layer and a thin piezoelectric layer bonded (or deposited) onto the semiconductor layer forming an acoustic cavity. Two or more tethers forming a current conduction path through the semiconductor layer and two or more access pads to silicon are positioned on two ends of the acoustic cavity and configured to inject a DC current in the semiconductor layer.

Abstract: A micro-mechanical resonator die includes: micro-mechanical resonator die layers; a cavity formed in at least one of the micro-mechanical resonator die layers; and a micro-mechanical resonator suspended in the cavity. The micro-mechanical resonator includes: a base; a first resonator portion extending from the base along a first plane; and a second resonator portion extending from the base along a second plane. The first resonator portion is configured to operate in an out-of-plane flexural mode that displaces at least part of the first resonator portion out of the first plane. The second resonator portion is configured to operate in an out-of-plane flexural mode that displaces at least part of the second resonator portion out of the second plane and out-of-phase relative to the first resonator portion.

Abstract: A circuit includes: integrated circuit (IC) layers; a cavity formed in at least one of the IC layers; and a micro-acoustic resonator suspended in the cavity by an anchor. The anchor includes: a bridge portion coupled to the micro-acoustic resonator and extending over the cavity; a first acoustic reflector portion adjacent the bridge portion, extending over the cavity, and oriented differently than the bridge portion; and a second acoustic reflector portion adjacent the first acoustic reflector portion, extending over the cavity, and oriented differently than the first acoustic reflector portion.

Abstract: Interaction of acoustic waves in a piezoelectric-semiconductor resonant cavity with the charge carriers in the semiconductor layer can be directed toward amplification of the acoustic waves; such amplification scheme can be applied in building unilateral amplifiers, zero loss filters, oscillators, high detection range circuit-less wireless sensors, isolators, duplexers, circulators and other acoustic devices. An apparatus for acoustoelectric amplification is described. The apparatus includes a semiconductor layer and a thin piezoelectric layer bonded (or deposited) onto the semiconductor layer forming an acoustic cavity. Two or more tethers forming a current conduction path through the semiconductor layer and two or more access pads to silicon are positioned on two ends of the acoustic cavity and configured to inject a DC current in the semiconductor layer.

Abstract: A system and method for converting a radio frequency (RF) to a direct current (DC) signal by generating acoustic phonons from the received RF signal utilizing a piezoelectric material. The acoustic phonons of the RF signal interact with the electrons of a semiconductive material to generate a DC signal that is proportional to the power of the RF signal. The DC signal can be used to power devices or can be interpreted as a measure of a local RF frequency spectrum.

Abstract: A microelectromechanical system (MEMS) sensor includes a substrate having a piezoelectric layer thereon; a MEMS piezoelectric resonator including a reference electrode on a first side of the piezoelectric layer, a first port (port 1) including a capacitor coupling electrode on a side of the piezoelectric layer opposite the first side, and a second port (port 2) for excitation signal coupling including another electrode on the side opposite the first side. The MEMS piezoelectric resonator has a natural resonant frequency. A variable capacitor on the substrate is positioned lateral to the MEMS piezoelectric resonator having a first and a second plate are connected to port 1. An antenna or an oscillator circuit is connected to port 2. Responsive to a physical parameter a capacitance of the variable capacitor changes which changes a frequency of the MEMS piezoelectric resonator relative to the natural resonant frequency to generate a frequency shift.

Abstract: A microelectromechanical system (MEMS) sensor includes a substrate having a piezoelectric layer thereon; a MEMS piezoelectric resonator including a reference electrode on a first side of the piezoelectric layer, a first port (port 1) including a capacitor coupling electrode on a side of the piezoelectric layer opposite the first side, and a second port (port 2) for excitation signal coupling including another electrode on the side opposite the first side. The MEMS piezoelectric resonator has a natural resonant frequency. A variable capacitor on the substrate is positioned lateral to the MEMS piezoelectric resonator having a first and a second plate are connected to port 1. An antenna or an oscillator circuit is connected to port 2. Responsive to a physical parameter a capacitance of the variable capacitor changes which changes a frequency of the MEMS piezoelectric resonator relative to the natural resonant frequency to generate a frequency shift.