Patents by Inventor Hakki Ergün Cekli
Hakki Ergün Cekli has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11803127Abstract: A method for determining a root cause affecting yield in a process for manufacturing devices on a substrate, the method including: obtaining yield distribution data including a distribution of a yield parameter across the substrate or part thereof; obtaining sets of metrology data, each set including a spatial variation of a process parameter over the substrate or part thereof corresponding to a different layer of the substrate; comparing the yield distribution data and metrology data based on a similarity metric describing a spatial similarity between the yield distribution data and an individual set out of the sets of the metrology data; and determining a first similar set of metrology data out of the sets of metrology data, being the first set of metrology data in terms of processing order for the corresponding layers, which is determined to be similar to the yield distribution data.Type: GrantFiled: November 4, 2019Date of Patent: October 31, 2023Assignee: ASML NETHERLANDS B.V.Inventors: Chenxi Lin, Cyrus Emil Tabery, Hakki Ergün Cekli, Simon Philip Spencer Hastings, Boris Menchtchikov, Yi Zou, Yana Cheng, Maxime Philippe Frederic Genin, Tzu-Chao Chen, Davit Harutyunyan, Youping Zhang
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Patent number: 11782349Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: GrantFiled: January 24, 2023Date of Patent: October 10, 2023Assignee: ASML NETHERLANDS B.V.Inventors: Weitian Kou, Alexander Ypma, Marc Hauptmann, Michiel Kupers, Lydia Marianna Vergaij-Huizer, Erik Johannes Maria Wallerbos, Erik Henri Adriaan Delvigne, Willem Seine Christian Roelofs, Hakki Ergün Cekli, Stefan Cornelis Theodorus Van Der Sanden, Cédric Désiré Grouwstra, David Frans Simon Deckers, Manuel Giollo, Iryna Dovbush
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Patent number: 11774862Abstract: Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.Type: GrantFiled: October 14, 2021Date of Patent: October 3, 2023Assignee: ASML NETHERLANDS B.V.Inventors: Hakki Ergün Cekli, Masashi Ishibashi, Wendy Johanna Martina Van De Ven, Willem Seine Christian Roelofs, Elliott Gerard McNamara, Rizvi Rahman, Michiel Kupers, Emil Peter Schmitt-Weaver, Erik Henri Adriaan Delvigne
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Patent number: 11714357Abstract: A method and associated computer program for predicting an electrical characteristic of a substrate subject to a process. The method includes determining a sensitivity of the electrical characteristic to a process characteristic, based on analysis of electrical metrology data including electrical characteristic measurements from previously processed substrates and of process metrology data including measurements of at least one parameter related to the process characteristic measured from the previously processed substrates; obtaining process metrology data related to the substrate describing the at least one parameter; and predicting the electrical characteristic of the substrate based on the sensitivity and the process metrology data.Type: GrantFiled: June 30, 2021Date of Patent: August 1, 2023Assignee: ASML NETHERLANDS B.V.Inventors: Alexander Ypma, Cyrus Emil Tabery, Simon Hendrik Celine Van Gorp, Chenxi Lin, Dag Sonntag, Hakki Ergün Cekli, Ruben Alvarez Sanchez, Shih-Chin Liu, Simon Philip Spencer Hastings, Boris Menchtchikov, Christiaan Theodoor De Ruiter, Peter Ten Berge, Michael James Lercel, Wei Duan, Pierre-Yves Jerome Yvan Guittet
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Publication number: 20230168591Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: ApplicationFiled: January 24, 2023Publication date: June 1, 2023Applicant: ASML NETHERLANDS B.V.Inventors: Weitian KOU, Alexander YPMA, Marc Hauptmann, Michiel Kupers, Lydia Marianna Vergaij-Huizer, Erick Johannes Maria Wallerbos, Erick Henri Adriaan Delvigne, Willem Seine Christian Roelofs, Hakki Ergün Cekli, Stefan Cornelis Theodorus Van Der Sanden, Cédric Désiré Grouwstra, David Frans Simon Deckers, Manuel Giollo, Iryna Dovbush
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Patent number: 11592753Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: GrantFiled: April 7, 2022Date of Patent: February 28, 2023Assignee: ASML Netherlands B.V.Inventors: Weitian Kou, Alexander Ypma, Marc Hauptmann, Michiel Kupers, Lydia Marianna Vergaij-Huizer, Erik Johannes Maria Wallerbos, Erik Henri Adriaan Delvigne, Willem Seine Christian Roelofs, Hakki Ergün Cekli, Stefan Cornelis Theodorus Van Der Sanden, Cédric Désiré Grouwstra, David Frans Simon Deckers, Manuel Giollo, Iryna Dovbush
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Publication number: 20230004095Abstract: A device manufacturing method, the method comprising: obtaining a measurement data time series of a plurality of substrates on which an exposure step and a process step have been performed; obtaining a status data time series relating to conditions prevailing when the process step was performed on at least some of the plurality of substrates; applying a filter to the measurement data time series and the status data time series to obtain filtered data; and determining, using the filtered data, a correction to be applied in an exposure step performed on a subsequent substrate.Type: ApplicationFiled: September 9, 2022Publication date: January 5, 2023Applicant: ASML NETHERLANDS B.V.Inventors: Rizvi RAHMAN, Hakki Ergün CEKLI, Cédric Désiré GROUWSTRA
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Patent number: 11493851Abstract: A method includes exposing number of fields on a substrate, obtaining data about a field and correcting exposure of the field in subsequent exposures. The method includes defining one or more sub-fields of the field based on the obtained data. Data relating to each sub-field is processed to produce sub-field correction information. A subsequent exposure of the one or more sub-fields is corrected using the sub-field correction information. By controlling a lithographic apparatus by reference to data of a particular sub-field within a field, overlay error can be reduced or minimized for a critical feature, rather than being averaged over the whole field. By controlling a lithographic apparatus with reference to a sub-field rather than only the whole field, a residual error can be reduced in each sub-field.Type: GrantFiled: September 23, 2021Date of Patent: November 8, 2022Assignee: ASML Netherlands B.V.Inventors: Hakki Ergün Cekli, Xing Lan Liu, Stefan Cornelis Theodorus Van Der Sanden, Richard Johannes Franciscus Van Haren
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Patent number: 11442366Abstract: A device manufacturing method, the method including: obtaining a measurement data time series of a plurality of substrates on which an exposure step and a process step have been performed; obtaining a status data time series relating to conditions prevailing when the process step was performed on at least some of the plurality of substrates; applying a filter to the measurement data time series and the status data time series to obtain filtered data; and determining, using the filtered data, a correction to be applied in an exposure step performed on a subsequent substrate.Type: GrantFiled: May 7, 2018Date of Patent: September 13, 2022Assignee: ASML Netherlands B.V.Inventors: Rizvi Rahman, Hakki Ergün Cekli, Cëdric Dësirë Grouwstra
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Publication number: 20220229373Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: ApplicationFiled: April 7, 2022Publication date: July 21, 2022Applicant: ASML NETHERLANDS B.V.Inventors: Weitian KOU, Alexander YPMA, Marc HAUPTMANN, Michiel KUPERS, Lydia Marianna VERGAIJ-HUIZER, Erik Johannes Maria WALLERBOS, Erik Henri Adriaan DELVIGNE, Willem Seine Christian ROELOFS, Hakki Ergün CEKLI, Stefan Cornelis Theodorus VAN DER SANDEN, Cédric Désiré GROUWSTRA, David Frans Simon DECKERS, Manuel GIOLLO, Iryna DOVBUSH
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Patent number: 11392044Abstract: A method, system and program for determining a position of a feature referenced to a substrate. The method includes measuring a position of the feature, receiving an intended placement of the feature and determining an estimate of a placement error based on knowledge of a relative position of a first reference feature referenced to a first layer on a substrate with respect to a second reference feature referenced to a second layer on a substrate. The updated position may be used to position the layer of the substrate having the feature, or another layer of the substrate, or another layer of another substrate.Type: GrantFiled: January 16, 2020Date of Patent: July 19, 2022Assignee: ASML Netherlands B.V.Inventors: Ralph Timotheus Huijgen, Marc Jurian Kea, Marcel Theodorus Maria Van Kessel, Masashi Ishibashi, Chi-Hsiang Fan, Hakki Ergün Cekli, Youping Zhang, Maurits Van Der Schaar, Liping Ren
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Patent number: 11327407Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: GrantFiled: November 24, 2020Date of Patent: May 10, 2022Assignee: ASML Netherlands B.V.Inventors: Weitian Kou, Alexander Ypma, Marc Hauptmann, Michiel Kupers, Lydia Marianna Vergaij-Huizer, Erik Johannes Maria Wallerbos, Erik Henri Adriaan Delvigne, Willem Seine Christian Roelofs, Hakki Ergün Cekli, Stefan Cornelis Theodorus Van Der Sanden, Cédric Désiré Grouwstra, David Frans Simon Deckers, Manuel Giollo, Iryna Dovbush
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Patent number: 11300886Abstract: A method for correcting values of one or more feed-forward parameters used in a process of patterning substrates, the method including: obtaining measured overlay and/or alignment error data of a patterned substrate; and calculating one or more correction values for the one or more feed-forward parameters in dependence on the measured overlay and/or alignment error data.Type: GrantFiled: July 12, 2018Date of Patent: April 12, 2022Assignee: ASML Netherlands B.V.Inventors: Hadi Yagubizade, Ahmet Koray Erdamar, Hakki Ergün Cekli
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Publication number: 20220035259Abstract: Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.Type: ApplicationFiled: October 14, 2021Publication date: February 3, 2022Applicant: ASML NETHERLANDS B.V.Inventors: Hakki Ergün CEKLI, Masashi ISHIBASHI, Wendy Johanna Martina VAN DE VEN, Willem Seine Christian ROELOFS, Elliott Gerard MC NAMARA, Rizvi RAHMAN, Michiel KUPERS, Emil Peter SCHMITT-WEAVER, Erik Henri Adriaan DELVIGNE
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Publication number: 20220011681Abstract: A method includes exposing number of fields on a substrate, obtaining data about a field and correcting exposure of the field in subsequent exposures. The method includes defining one or more sub-fields of the field based on the obtained data. Data relating to each sub-field is processed to produce sub-field correction information. A subsequent exposure of the one or more sub-fields is corrected using the sub-field correction information. By controlling a lithographic apparatus by reference to data of a particular sub-field within a field, overlay error can be reduced or minimized for a critical feature, rather than being averaged over the whole field. By controlling a lithographic apparatus with reference to a sub-field rather than only the whole field, a residual error can be reduced in each sub-field.Type: ApplicationFiled: September 23, 2021Publication date: January 13, 2022Applicant: ASML Netherlands B.V.Inventors: Hakki Ergün CEKLI, Xing Lan Liu, Stefan Cornelis Theodorus VAN DER SANDEN, Richard Johannes Franciscus VAN HAREN
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Publication number: 20210389677Abstract: A method for determining a root cause affecting yield in a process for manufacturing devices on a substrate, the method including: obtaining yield distribution data including a distribution of a yield parameter across the substrate or part thereof; obtaining sets of metrology data, each set including a spatial variation of a process parameter over the substrate or part thereof corresponding to a different layer of the substrate; comparing the yield distribution data and metrology data based on a similarity metric describing a spatial similarity between the yield distribution data and an individual set out of the sets of the metrology data; and determining a first similar set of metrology data out of the sets of metrology data, being the first set of metrology data in terms of processing order for the corresponding layers, which is determined to be similar to the yield distribution data.Type: ApplicationFiled: November 4, 2019Publication date: December 16, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Chenxi LIN, Cyrus Emil TABERY, Hakki Ergün CEKLI, Simon Philip Spencer HASTINGS, Boris MENCHTCHIKOV, Yi ZOU, Yana CHENG, Maxime Philippe Frederic GENIN, Tzu-Chao CHEN, Davit HARUTYUNYAN, Youping ZHANG
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Patent number: 11181829Abstract: A method for determining a control parameter for an apparatus used in a semiconductor manufacturing process, the method including: obtaining performance data associated with a substrate subject to the semiconductor manufacturing process; obtaining die specification data including values of an expected yield of one or more dies on the substrate based on the performance data and/or a specification for the performance data; and determining the control parameter in dependence on the performance data and the die specification data. Advantageously, the efficiency and/or accuracy of processes is improved by determining how to perform the processes in dependence on dies within specification.Type: GrantFiled: July 30, 2018Date of Patent: November 23, 2021Assignee: ASML Netherlands B.V.Inventors: Cyrus Emil Tabery, Hakki Ergün Cekli, Simon Hendrik Celine Van Gorp, Chenxi Lin
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Patent number: 11175591Abstract: Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.Type: GrantFiled: April 21, 2017Date of Patent: November 16, 2021Assignee: ASML Netherlands B.V.Inventors: Hakki Ergün Cekli, Masashi Ishibashi, Wendy Johanna Martina Van De Ven, Willem Seine Christian Roelofs, Elliott Gerard McNamara, Rizvi Rahman, Michiel Kupers, Emil Peter Schmitt-Weaver, Erik Henri Adriaan Delvigne
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Patent number: 11156923Abstract: A method includes exposing number of fields on a substrate, obtaining data about a field and correcting exposure of the field in subsequent exposures. The method includes defining one or more sub-fields of the field based on the obtained data. Data relating to each sub-field is processed to produce sub-field correction information. A subsequent exposure of the one or more sub-fields is corrected using the sub-field correction information. By controlling a lithographic apparatus by reference to data of a particular sub-field within a field, overlay error can be reduced or minimized for a critical feature, rather than being averaged over the whole field. By controlling a lithographic apparatus with reference to a sub-field rather than only the whole field, a residual error can be reduced in each sub-field.Type: GrantFiled: December 10, 2015Date of Patent: October 26, 2021Assignee: ASML Netherlands B.V.Inventors: Hakki Ergün Cekli, Xing Lan Liu, Stefan Cornelis Theodorus Van Der Sanden, Richard Johannes Franciscus Van Haren
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Publication number: 20210325788Abstract: A method and associated computer program for predicting an electrical characteristic of a substrate subject to a process. The method includes determining a sensitivity of the electrical characteristic to a process characteristic, based on analysis of electrical metrology data including electrical characteristic measurements from previously processed substrates and of process metrology data including measurements of at least one parameter related to the process characteristic measured from the previously processed substrates; obtaining process metrology data related to the substrate describing the at least one parameter; and predicting the electrical characteristic of the substrate based on the sensitivity and the process metrology data.Type: ApplicationFiled: June 30, 2021Publication date: October 21, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Alexander YPMA, Cyrus Emil TABERY, Simon Hendrik Celine VAN GORP, Chenxi LIN, Dag SONNTAG, Hakki Ergün CEKLI, Ruben ALVAREZ SANCHEZ, Shih-Chin LIU, Simon Philip Spencer HASTINGS, Boris MENCHTCHIKOV, Christiaan Theodoor DE RUITER, Peter TEN BERGE, Michael James LERCEL, Wei DUAN, Pierre-Yves Jerome Yvan GUITTET