Patents by Inventor Hakuba KITAGAWA

Hakuba KITAGAWA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Substrate treatment apparatus and manufacturing method of semiconductor device
    Patent number: 11784064
    Abstract: According to an embodiment, a substrate treatment apparatus includes a hair member including a noble metal, and a liquid chemical supply member to supply a liquid chemical. While a tip part of the hair member is contact with a predetermined surface of a metal, the liquid chemical is supplied onto the surface of the metal, and the metal is removed with etching.
    Type: Grant
    Filed: November 17, 2020
    Date of Patent: October 10, 2023
    Assignee: Kioxia Corporation
    Inventors: Yasuhito Yoshimizu, Yuya Akeboshi, Fuyuma Ito, Hakuba Kitagawa
  • SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE
    Publication number: 20230207616
    Abstract: A semiconductor substrate includes a surface having a groove. The groove includes an inner bottom surface and an inner wall surface. The inner wall surface has a depression. The depression has a depth from a direction along a surface of the inner wall surface to a width direction of the groove. The substrate being exposed to the inner wall surface.
    Type: Application
    Filed: February 20, 2023
    Publication date: June 29, 2023
    Applicant: Kioxia Corporation
    Inventors: Fuyuma ITO, Tatsuhiko Koide, Hiroki Nakajima, Naomi Yanai, Tomohiko Sugita, Hakuba Kitagawa, Takaumi Morita
  • Semiconductor substrate, method of manufacturing semiconductor device, and method of manufacturing semiconductor substrate
    Patent number: 11616120
    Abstract: A semiconductor substrate includes a surface having a groove. The groove includes an inner bottom surface and an inner wall surface. The inner wall surface has a depression. The depression has a depth from a direction along a surface of the inner wall surface to a width direction of the groove. The substrate being exposed to the inner wall surface.
    Type: Grant
    Filed: March 9, 2021
    Date of Patent: March 28, 2023
    Assignee: Kioxia Corporation
    Inventors: Fuyuma Ito, Tatsuhiko Koide, Hiroki Nakajima, Naomi Yanai, Tomohiko Sugita, Hakuba Kitagawa, Takaumi Morita
  • CHEMICAL SOLUTION, ETCHING METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    Publication number: 20220310401
    Abstract: According to one embodiment, a chemical solution comprises a mixed acid including an inorganic acid, an oxidizing agent, a carboxylic acid, and water; and polyethyleneimine of a concentration in the chemical solution in a range of 0.05 wt % to 10 wt %.
    Type: Application
    Filed: September 3, 2021
    Publication date: September 29, 2022
    Applicant: Kioxia Corporation
    Inventors: Hakuba KITAGAWA, Tatsuhiko KOIDE, Hiroshi FUJITA
  • Substrate treatment device, substrate treatment method, and semiconductor device manufacturing method
    Patent number: 11342182
    Abstract: According to an embodiment, the substrate treatment device includes a dilutor configured to dilute a first liquid containing a metal ion and exhibiting acidity. The device further includes a pH changer configured to change a pH of the first liquid before or after being diluted by the dilutor. The device further includes a substrate conditioner configured to treat the substrate using the first liquid, which is diluted by the dilutor and with the pH changed by the pH changer.
    Type: Grant
    Filed: September 3, 2019
    Date of Patent: May 24, 2022
    Assignee: KIOXIA CORPORATION
    Inventors: Yasuhito Yoshimizu, Fuyuma Ito, Hakuba Kitagawa, Yohei Yamamoto, Hisashi Okuchi, Yuji Yamada
  • SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE
    Publication number: 20220085153
    Abstract: A semiconductor substrate includes a surface having a groove. The groove includes an inner bottom surface and an inner wall surface. The inner wall surface has a depression. The depression has a depth from a direction along a surface of the inner wall surface to a width direction of the groove. The substrate being exposed to the inner wall surface.
    Type: Application
    Filed: March 9, 2021
    Publication date: March 17, 2022
    Applicant: Kioxia Corporation
    Inventors: Fuyuma ITO, Tatsuhiko KOIDE, Hiroki NAKAJIMA, Naomi YANAI, Tomohiko SUGITA, Hakuba KITAGAWA, Takaumi MORITA
  • Substrate processing apparatus and substrate processing method
    Patent number: 11211267
    Abstract: According to one embodiment, a substrate processing apparatus includes a table configured to place a substrate thereon and to connect the substrate to a positive electrode, an counter electrode located opposite to the table, having a plurality of holes, and connected to a negative electrode, and a holding unit located opposite to the table across the counter electrode and configured to supply a chemical liquid to the counter electrode while holding the counter electrode.
    Type: Grant
    Filed: August 29, 2019
    Date of Patent: December 28, 2021
    Assignee: Toshiba Memory Corporation
    Inventors: Yasuhito Yoshimizu, Hakuba Kitagawa, Takaumi Morita
  • Substrate treatment apparatus and method of manufacturing semiconductor device
    Patent number: 11171022
    Abstract: In one embodiment, a substrate treatment apparatus includes a supporter configured to support and rotate a substrate, and a liquid supplier configured to supply a liquid to the substrate. The apparatus further includes a wall provided separately from the supporter and at least partially surrounding the supporter, and a detector provided between the supporter and the wall and configured to detect a change in the liquid.
    Type: Grant
    Filed: February 19, 2019
    Date of Patent: November 9, 2021
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Hakuba Kitagawa, Yasuhito Yoshimizu, Fuyuma Ito, Hiroyuki Tanizaki
  • SUBSTRATE TREATMENT APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    Publication number: 20210090913
    Abstract: According to an embodiment, a substrate treatment apparatus includes a hair member including a noble metal, and a liquid chemical supply member to supply a liquid chemical. While a tip part of the hair member is contact with a predetermined surface of a metal, the liquid chemical is supplied onto the surface of the metal, and the metal is removed with etching.
    Type: Application
    Filed: November 17, 2020
    Publication date: March 25, 2021
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Yasuhito YOSHIMIZU, Yuya AKEBOSHI, Fuyuma ITO, Hakuba KITAGAWA
  • Substrate treatment apparatus and manufacturing method of semiconductor device
    Patent number: 10879087
    Abstract: According to an embodiment, a substrate treatment apparatus includes a hair member including a noble metal, and a liquid chemical supply member to supply a liquid chemical. While a tip part of the hair member is contact with a predetermined surface of a metal, the liquid chemical is supplied onto the surface of the metal, and the metal is removed with etching.
    Type: Grant
    Filed: March 14, 2018
    Date of Patent: December 29, 2020
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Yasuhito Yoshimizu, Yuya Akeboshi, Fuyuma Ito, Hakuba Kitagawa
  • Substrate treatment apparatus, method of manufacturing semiconductor device and workpiece substrate
    Patent number: 10804221
    Abstract: In one embodiment, a substrate treatment apparatus includes a substrate holder configured to hold a substrate provided with a film. The apparatus further includes a film treatment module configured to treat the film in accordance with warpage of the substrate such that the film includes a first region having a first film quality or a first film thickness and a second region having a second film quality or a second film thickness different from the first film quality or the first film thickness.
    Type: Grant
    Filed: February 28, 2019
    Date of Patent: October 13, 2020
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Fuyuma Ito, Yasuhito Yoshimizu, Hakuba Kitagawa
  • SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
    Publication number: 20200211864
    Abstract: According to one embodiment, a substrate processing apparatus includes a table configured to place a substrate thereon and to connect the substrate to a positive electrode, an counter electrode located opposite to the table, having a plurality of holes, and connected to a negative electrode, and a holding unit located opposite to the table across the counter electrode and configured to supply a chemical liquid to the counter electrode while holding the counter electrode.
    Type: Application
    Filed: August 29, 2019
    Publication date: July 2, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Yasuhito YOSHIMIZU, Hakuba KITAGAWA, Takaumi MORITA
  • SUBSTRATE TREATMENT DEVICE, SUBSTRATE TREATMENT METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
    Publication number: 20200185221
    Abstract: According to an embodiment, the substrate treatment device includes a dilutor configured to dilute a first liquid containing a metal ion and exhibiting acidity. The device further includes a pH changer configured to change a pH of the first liquid before or after being diluted by the dilutor. The device further includes a substrate conditioner configured to treat the substrate using the first liquid, which is diluted by the dilutor and with the pH changed by the pH changer.
    Type: Application
    Filed: September 3, 2019
    Publication date: June 11, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Yasuhito YOSHIMIZU, Fuyuma ITO, Hakuba KITAGAWA, Yohei YAMAMOTO, Hisashi OKUCHI, Yuji YAMADA
  • SUBSTRATE TREATMENT APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND WORKPIECE SUBSTRATE
    Publication number: 20200091092
    Abstract: In one embodiment, a substrate treatment apparatus includes a substrate holder configured to hold a substrate provided with a film. The apparatus further includes a film treatment module configured to treat the film in accordance with warpage of the substrate such that the film includes a first region having a first film quality or a first film thickness and a second region having a second film quality or a second film thickness different from the first film quality or the first film thickness.
    Type: Application
    Filed: February 28, 2019
    Publication date: March 19, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Fuyuma Ito, Yasuhito Yoshimizu, Hakuba Kitagawa
  • SUBSTRATE TREATMENT APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    Publication number: 20200066550
    Abstract: In one embodiment, a substrate treatment apparatus includes a supporter configured to support and rotate a substrate, and a liquid supplier configured to supply a liquid to the substrate. The apparatus further includes a wall provided separately from the supporter and at least partially surrounding the supporter, and a detector provided between the supporter and the wall and configured to detect a change in the liquid.
    Type: Application
    Filed: February 19, 2019
    Publication date: February 27, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Hakuba KITAGAWA, Yasuhito YOSHIMIZU, Fuyuma ITO, Hiroyuki TANIZAKI
  • SUBSTRATE TREATMENT APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    Publication number: 20180269082
    Abstract: According to an embodiment, a substrate treatment apparatus includes a hair member including a noble metal, and a liquid chemical supply member to supply a liquid chemical. While a tip part of the hair member is contact with a predetermined surface of a metal, the liquid chemical is supplied onto the surface of the metal, and the metal is removed with etching.
    Type: Application
    Filed: March 14, 2018
    Publication date: September 20, 2018
    Applicant: Toshiba Memory Corporation
    Inventors: Yasuhito Yoshimizu, Yuya Akeboshi, Fuyuma Ito, Hakuba Kitagawa
  • SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD
    Publication number: 20180265989
    Abstract: According to an embodiment, a substrate treatment apparatus includes a noble metal-containing member having a concave-convex surface including a noble metal, and a liquid chemical supply member to supply a liquid chemical. While convex portions of the concave-convex surface are contact with a predetermined surface of a metal, the liquid chemical is supplied onto the surface of the metal to remove the metal with etching.
    Type: Application
    Filed: September 11, 2017
    Publication date: September 20, 2018
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Yasuhito YOSHIMIZU, Yuya AKEBOSHI, Fuyuma ITO, Hakuba KITAGAWA