Patents by Inventor Hal Emmer

Hal Emmer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11695052
    Abstract: This disclosure describes the structure of a transistor that provides improved performance by reducing the off-state capacitance between the source and the drain by using a cap layer to extend the electrical distance between the gate and the source and drain contacts. In certain embodiments, a dielectric layer may be disposed between the gate electrode and the cap layer and vias are created in the dielectric layer to allow the gate electrode to contact the cap layer at select locations. In some embodiments, the gate electrode is offset from the cap layer to allow a more narrow cap layer and to allow additional space between the gate electrode and the drain contact facilitating the inclusion of a field plate. The gate electrode may be configured to only contact a portion of the cap layer.
    Type: Grant
    Filed: February 25, 2021
    Date of Patent: July 4, 2023
    Assignee: Finwave Semiconductor, Inc.
    Inventors: Bin Lu, Dongfei Pei, Mark Dipsey, Hal Emmer
  • Publication number: 20210265477
    Abstract: This disclosure describes the structure of a transistor that provides improved performance by reducing the off-state capacitance between the source and the drain by using a cap layer to extend the electrical distance between the gate and the source and drain contacts. In certain embodiments, a dielectric layer may be disposed between the gate electrode and the cap layer and vias are created in the dielectric layer to allow the gate electrode to contact the cap layer at select locations. In some embodiments, the gate electrode is offset from the cap layer to allow a more narrow cap layer and to allow additional space between the gate electrode and the drain contact facilitating the inclusion of a field plate. The gate electrode may be configured to only contact a portion of the cap layer.
    Type: Application
    Filed: February 25, 2021
    Publication date: August 26, 2021
    Inventors: Bin Lu, Dongfei Pei, Mark Dipsey, Hal Emmer
  • Publication number: 20160322514
    Abstract: Solar cells in accordance with a number of embodiments of the invention incorporate effectively transparent 3D contacts that redirect light incident on the contacts onto the photoabsorbing surfaces of the solar cells. One embodiment includes a photoabsorbing surface and a plurality of three-dimensional contacts formed on the photoabsorbing surface. The plurality of three-dimensional contacts are spaced apart so that radiation is incident on a portion of the photoabsorbing surface. In addition, the three-dimensional contacts include at least one surface that redirects radiation incident on the three-dimensional contacts onto the photoabsorbing surface.
    Type: Application
    Filed: May 2, 2016
    Publication date: November 3, 2016
    Applicant: California Institute of Technology
    Inventors: Harry A. Atwater, Rebecca Saive, Aleca M. Borsuk, Hal Emmer, Colton Bukowsky, Sisir Yalamanchili