Abstract: A substrate-removed, surface passivated, and anti-reflective (AR) coated detector assembly is provided. The assembly has an AR coating or passivation layer which includes a wide bandgap thin-film dielectric/passivation layer integrated therein. The wide bandgap thin-film dielectric/passivation layer is positioned proximal to a back interface of a substrate-removed detector assembly. A method of manufacturing the detector assembly includes etching a backside of a partially-removed-substrate detector assembly to obtain an etched detector assembly removed from a substrate. A wide bandgap layer is deposited, in a vacuum chamber, on the etched detector assembly without utilizing an adhesive layer. Additional anti-reflective coating layers are deposited, in the same vacuum chamber, on the wide bandgap layer to form an anti-reflective coating layer with the wide bandgap layer integrated therein.

Abstract: A substrate-removed, surface passivated, and anti-reflective (AR) coated detector assembly is provided. The assembly has an AR coating or passivation layer which includes a wide bandgap thin-film dielectric/passivation layer integrated therein. The wide bandgap thin-film dielectric/passivation layer is positioned proximal to a back interface of a substrate-removed detector assembly. A method of manufacturing the detector assembly includes etching a backside of a partially-removed-substrate detector assembly to obtain an etched detector assembly removed from a substrate. A wide bandgap layer is deposited, in a vacuum chamber, on the etched detector assembly without utilizing an adhesive layer. Additional anti-reflective coating layers are deposited, in the same vacuum chamber, on the wide bandgap layer to form an anti-reflective coating layer with the wide bandgap layer integrated therein.

Abstract: A mechanically stable diffusion barrier stack structure and method of fabricating the same is disclosed. The diffusion barrier stack structure having a molybdenum nitride layer deposited on a molybdenum layer and operates to prevent diffusion between a semiconductor layer and a metal interconnect. The method for fabricating includes depositing a molybdenum layer outwardly from the semiconductor layer in a deposition chamber, and depositing a molybdenum nitride layer outwardly from the molybdenum layer in the deposition chamber.

Abstract: A mechanically stable diffusion barrier stack structure and method of fabricating the same is disclosed. The fusion barrier stack structure having a molybdenum nitride layer deposited on a molybdenum layer and operates to prevent diffusion between a semiconductor layer and a metal interconnect. The method for fabricating includes depositing a molybdenum layer outwardly from the semiconductor layer in a deposition chamber, and depositing a molybdenum nitride layer outwardly from the molybdenum layer in the deposition chamber.

Abstract: A microlens has a material composition gradient that varies along the z-axis of the microlens to provide desired refractive properties in conjunction with the surface shape of the microlens. A method for designing the microlens may include defining a microlens surface shape, defining desired refraction properties of the microlens, and determining a refractive index gradient of the microlens in the direction of the z-axis using the desired refraction properties and the defined surface shape of the microlens. A method for fabricating the microlens may include depositing a material having a material composition gradient that is determined based on a lens shape and desired refractive parameters, and forming the microlens having the desired surface shape in the material.