Patents by Inventor Han-Byung Park
Han-Byung Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8227919Abstract: An interconnection structure and an electronic device employing the same are provided. The interconnection structure for an integrated structure includes first and second contact plugs disposed on a substrate, and a connection pattern interposed between sidewalls of the first and second contact plugs and configured to electrically connect the first and second contact plugs.Type: GrantFiled: July 10, 2009Date of Patent: July 24, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Han-Byung Park, Soon-Moon Jung, Hoon Lim
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Patent number: 8154910Abstract: A full complementary metal-oxide semiconductor (CMOS) static random access memory (SRAM) may have a reduced cell size by arranging a word line of a pair of transistors arranged on the uppermost layer of the SRAM. First and second transistors may be arranged on first and second active regions. Third and fourth transistors may be arranged on first and second semiconductor layers formed over the first and second active regions. Fifth and sixth transistors may be arranged on the third and fourth semiconductor layers over the first and second semiconductor layers. A word line may be arranged in a straight line between the first and second gates of the first and second transistors and between the third and fourth gates of the third and fourth transistors.Type: GrantFiled: January 13, 2010Date of Patent: April 10, 2012Assignee: SAMSUNG Electronics Co., Ltd.Inventors: Han-byung Park, Hoon Lim, Hoo-sung Cho
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Publication number: 20110266623Abstract: A semiconductor device and method for arranging and manufacturing the same are disclosed. The semiconductor device includes a plurality of inverters including at least one first pull-up transistor and first pull-down transistor and inverting and outputting an input signal, respectively; and a plurality of NAND gates including at least two second pull-up transistor and second pull-down transistor and generating an output signal having a high level if at least one of at least two input signals has a low level, respectively, wherein the at least one first pull-up transistor and first pull-down transistor and the at least two second pull-up transistor and second pull-down transistor are stacked and arranged on at least two layers.Type: ApplicationFiled: July 18, 2011Publication date: November 3, 2011Inventors: Gong-Heum Han, Hyou-Youn Nam, Bo-Tak Lim, Han-Byung Park, Soon-Moon Jung, Hoon Lim
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Patent number: 8048727Abstract: An SRAM device includes a substrate having at least one cell active region in a cell array region and a plurality of peripheral active regions in a peripheral circuit region, a plurality of stacked cell gate patterns in the cell array region, and a plurality of peripheral gate patterns disposed on the peripheral active regions in the peripheral circuit region. Metal silicide layers are disposed on at least one portion of the peripheral gate patterns and on the semiconductor substrate near the peripheral gate patterns, and buried layer patterns are disposed on the peripheral gate patterns and on at least a portion of the metal silicide layers and the portions of the semiconductor substrate near the peripheral gate patterns. An etch stop layer and a protective interlayer-insulating layer are disposed around the peripheral gate patterns and on the cell array region. Methods of forming an SRAM device are also disclosed.Type: GrantFiled: January 14, 2010Date of Patent: November 1, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Jae-Hoon Jang, Soon-Moon Jung, Young-Seop Rah, Han-Byung Park
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Publication number: 20110235407Abstract: A semiconductor memory device including a substrate, wherein the substrate includes first, second and third well regions, the first well region is disposed between the second and third well regions, the first well region includes a first type conductor and the second and third well regions each include a second type conductor.Type: ApplicationFiled: March 8, 2011Publication date: September 29, 2011Inventors: Sun-me Lim, Han-byung Park, Yong-shik Kim, Hee-bum Hong
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Patent number: 7994582Abstract: In a stacked load-less static random access memory (SRAM) device in which a pair of transmission transistors is stacked on a pair of driving transistors, the stacked load-less SRAM device includes first and second transistors arranged in first and second active regions separately on a semiconductor substrate and third and fourth transistors arranged on first and second semiconductor layers over the first and second transistors. A first drain region of the first transistor, a third drain region of the third transistor, and a second gate of the second transistor are electrically connected through a first contact node. A second drain region of the second transistor, a fourth drain region of the fourth transistor, and a first gate of the first transistor are electrically connected through a second contact node.Type: GrantFiled: October 16, 2009Date of Patent: August 9, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Han-byung Park, Hoon Lim
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Patent number: 7982221Abstract: A semiconductor device and method for arranging and manufacturing the same are disclosed. The semiconductor device includes a plurality of inverters including at least one first pull-up transistor and first pull-down transistor and inverting and outputting an input signal, respectively; and a plurality of NAND gates including at least two second pull-up transistor and second pull-down transistor and generating an output signal having a high level if at least one of at least two input signals has a low level, respectively, wherein the at least one first pull-up transistor and first pull-down transistor and the at least two second pull-up transistor and second pull-down transistor are stacked and arranged on at least two layers.Type: GrantFiled: August 7, 2009Date of Patent: July 19, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Gong-Heum Han, Hyou-Youn Nam, Bo-Tak Lim, Han-Byung Park, Soon-Moon Jung, Hoon Lim
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Patent number: 7978561Abstract: Provided is a semiconductor device having transistors of stacked structure. The semiconductor memory device having transistors includes a memory cell array block which includes a plurality of word lines and a plurality of memory cells which each includes at least one first transistor connected between the plurality of word lines, and a word line decoder which includes a plurality of drivers which drive the plurality of word lines, respectively, wherein a plurality of word lines are disposed on a first layer, and a plurality of drivers are disposed on at least two second layers.Type: GrantFiled: March 23, 2009Date of Patent: July 12, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Han-Byung Park, Soon-Moon Jung, Hoon Lim
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Patent number: 7927932Abstract: A semiconductor device according to example embodiments may have a plurality of stacked transistors. The semiconductor device may have a lower insulating layer formed on a semiconductor substrate and an upper channel body pattern formed on the lower insulating layer. A source region and a drain region may be formed within the upper channel body pattern, and a non-metal transfer gate electrode may be disposed on the upper channel body pattern between the source and drain regions. The non-metal transfer gate electrode, the upper channel body pattern, and the lower insulating layer may be covered by an intermediate insulating layer. A metal word line may be disposed within the intermediate insulating layer to contact at least an upper surface of the non-metal transfer gate electrode. An insulating spacer may be disposed on a sidewall of the metal word line.Type: GrantFiled: September 23, 2010Date of Patent: April 19, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Han-Byung Park, Soon-Moon Jung, Hoon Lim, Cha-Dong Yeo, Byoung-Keun Son, Jae-Joo Shim, Chang-Min Hong
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Publication number: 20110014754Abstract: A semiconductor device according to example embodiments may have a plurality of stacked transistors. The semiconductor device may have a lower insulating layer formed on a semiconductor substrate and an upper channel body pattern formed on the lower insulating layer. A source region and a drain region may be formed within the upper channel body pattern, and a non-metal transfer gate electrode may be disposed on the upper channel body pattern between the source and drain regions. The non-metal transfer gate electrode, the upper channel body pattern, and the lower insulating layer may be covered by an intermediate insulating layer. A metal word line may be disposed within the intermediate insulating layer to contact at least an upper surface of the non-metal transfer gate electrode. An insulating spacer may be disposed on a sidewall of the metal word line.Type: ApplicationFiled: September 23, 2010Publication date: January 20, 2011Inventors: Han-Byung Park, Soon-Moon Jung, Hoon Lim, Cha-Dong Yeo, Byoung-Keun Son, Jae-Joo Shim, Chang-Min Hong
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Patent number: 7825472Abstract: A semiconductor device according to example embodiments may have a plurality of stacked transistors. The semiconductor device may have a lower insulating layer formed on a semiconductor substrate and an upper channel body pattern formed on the lower insulating layer. A source region and a drain region may be formed within the upper channel body pattern, and a non-metal transfer gate electrode may be disposed on the upper channel body pattern between the source and drain regions. The non-metal transfer gate electrode, the upper channel body pattern, and the lower insulating layer may be covered by an intermediate insulating layer. A metal word line may be disposed within the intermediate insulating layer to contact at least an upper surface of the non-metal transfer gate electrode. An insulating spacer may be disposed on a sidewall of the metal word line.Type: GrantFiled: July 18, 2008Date of Patent: November 2, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Han-Byung Park, Soon-Moon Jung, Hoon Lim, Cha-Dong Yeo, Byoung-Keun Son, Jae-Joo Shim, Chang-Min Hong
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Publication number: 20100195375Abstract: A full complementary metal-oxide semiconductor (CMOS) static random access memory (SRAM) may have a reduced cell size by arranging a word line of a pair of transistors arranged on the uppermost layer of the SRAM. First and second transistors may be arranged on first and second active regions. Third and fourth transistors may be arranged on first and second semiconductor layers formed over the first and second active regions. Fifth and sixth transistors may be arranged on the third and fourth semiconductor layers over the first and second semiconductor layers. A word line may be arranged in a straight line between the first and second gates of the first and second transistors and between the third and fourth gates of the third and fourth transistors.Type: ApplicationFiled: January 13, 2010Publication date: August 5, 2010Applicant: Samsung Electronics Co., LtdInventors: Han-byung PARK, Hoon Ijm, Hoo-Sung Cho
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Publication number: 20100193871Abstract: In a stacked load-less static random access memory (SRAM) device in which a pair of transmission transistors is stacked on a pair of driving transistors, the stacked load-less SRAM device includes first and second transistors arranged in first and second active regions separately on a semiconductor substrate and third and fourth transistors arranged on first and second semiconductor layers over the first and second transistors. A first drain region of the first transistor, a third drain region of the third transistor, and a second gate of the second transistor are electrically connected through a first contact node. A second drain region of the second transistor, a fourth drain region of the fourth transistor, and a first gate of the first transistor are electrically connected through a second contact node.Type: ApplicationFiled: October 16, 2009Publication date: August 5, 2010Applicant: Samsung Electronics Co., Ltd.Inventors: Han-byung Park, Hoon Lim
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Publication number: 20100120217Abstract: An SRAM device includes a substrate having at least one cell active region in a cell array region and a plurality of peripheral active regions in a peripheral circuit region, a plurality of stacked cell gate patterns in the cell array region, and a plurality of peripheral gate patterns disposed on the peripheral active regions in the peripheral circuit region. Metal silicide layers are disposed on at least one portion of the peripheral gate patterns and on the semiconductor substrate near the peripheral gate patterns, and buried layer patterns are disposed on the peripheral gate patterns and on at least a portion of the metal silicide layers and the portions of the semiconductor substrate near the peripheral gate patterns. An etch stop layer and a protective interlayer-insulating layer are disposed around the peripheral gate patterns and on the cell array region. Methods of forming an SRAM device are also disclosed.Type: ApplicationFiled: January 14, 2010Publication date: May 13, 2010Inventors: Jae-Hoon Jang, Soon-Moon Jung, Young-Seop Rah, Han-Byung Park
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Patent number: 7671389Abstract: An SRAM device includes a substrate having at least one cell active region in a cell array region and a plurality of peripheral active regions in a peripheral circuit region, a plurality of stacked cell gate patterns in the cell array region, and a plurality of peripheral gate patterns disposed on the peripheral active regions in the peripheral circuit region. Metal silicide layers are disposed on at least one portion of the peripheral gate patterns and on the semiconductor substrate near the peripheral gate patterns, and buried layer patterns are disposed on the peripheral gate patterns and on at least a portion of the metal silicide layers and the portions of the semiconductor substrate near the peripheral gate patterns. An etch stop layer and a protective interlayer-insulating layer are disposed around the peripheral gate patterns and on the cell array region. Methods of forming an SRAM device are also disclosed.Type: GrantFiled: March 21, 2006Date of Patent: March 2, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Jae-Hoon Jang, Soon-Moon Jung, Young-Seop Rah, Han-Byung Park
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Publication number: 20100006942Abstract: An interconnection structure and an electronic device employing the same are provided. The interconnection structure for an integrated structure includes first and second contact plugs disposed on a substrate, and a connection pattern interposed between sidewalls of the first and second contact plugs and configured to electrically connect the first and second contact plugs.Type: ApplicationFiled: July 10, 2009Publication date: January 14, 2010Inventors: Han-Byung Park, Soon-Moon Jung, Hoon Lim
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Publication number: 20090294863Abstract: A semiconductor device and method for arranging and manufacturing the same are disclosed. The semiconductor device includes a plurality of inverters including at least one first pull-up transistor and first pull-down transistor and inverting and outputting an input signal, respectively; and a plurality of NAND gates including at least two second pull-up transistor and second pull-down transistor and generating an output signal having a high level if at least one of at least two input signals has a low level, respectively, wherein the at least one first pull-up transistor and first pull-down transistor and the at least two second pull-up transistor and second pull-down transistor are stacked and arranged on at least two layers.Type: ApplicationFiled: August 7, 2009Publication date: December 3, 2009Inventors: Gong-Heum Han, Hyou-Youn Nam, Bo-Tak Lim, Han-Byung Park, Soon-Moon Jung, Hoon Lim
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Patent number: 7592625Abstract: Example embodiments relate to a semiconductor device and a method of fabricating the same. The device may include a semiconductor substrate including a peripheral region and a cell array region, wherein the substrate in the cell array region may be recessed lower than the peripheral region, a plurality of cell transistor layers stacked in the cell array region, and a plurality of peripheral circuit transistors formed in the peripheral region. The cell transistor layers may be formed in the cell array region at a lower level than the peripheral region.Type: GrantFiled: August 11, 2006Date of Patent: September 22, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Han-Byung Park, Hoon Lim, Soon-Moon Jung
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Patent number: 7589375Abstract: A non-volatile memory device includes a semiconductor substrate including a cell array region and a peripheral circuit region. A first cell unit is on the semiconductor substrate in the cell array region, and a cell insulating layer is on the first cell unit. A first active body layer is in the cell insulating layer and over the first cell unit, and a second cell unit is on the first active body layer. The device further includes a peripheral transistor on the semiconductor substrate in the peripheral circuit region. The peripheral transistor has a gate pattern and source/drain regions, and a metal silicide layer is on the gate pattern and/or on the source/drain regions of the peripheral transistor. A peripheral insulating layer is on the metal silicide layer and the peripheral transistor, and an etching protection layer is between the cell insulating layer and the peripheral insulating layer and between the metal silicide layer and the peripheral insulating layer.Type: GrantFiled: December 20, 2006Date of Patent: September 15, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Jae-Hoon Jang, Soon-Moon Jung, Jong-Hyuk Kim, Young-Seop Rah, Han-Byung Park
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Patent number: 7589992Abstract: A semiconductor device and method for arranging and manufacturing the same are disclosed. The semiconductor device includes a plurality of inverters including at least one first pull-up transistor and first pull-down transistor and inverting and outputting an input signal, respectively; and a plurality of NAND gates including at least two second pull-up transistor and second pull-down transistor and generating an output signal having a high level if at least one of at least two input signals has a low level, respectively, wherein the at least one first pull-up transistor and first pull-down transistor and the at least two second pull-up transistor and second pull-down transistor are stacked and arranged on at least two layers.Type: GrantFiled: December 10, 2007Date of Patent: September 15, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Gong-Heum Han, Hyou-Youn Nam, Bo-Tak Lim, Han-Byung Park, Soon-Moon Jung, Hoon Lim