Abstract: Plasma etching is controlled utilizing two etchant gases to form a plasma so as to obtain controlled (e.g., uniform) etch rate across a wafer. One etchant gas forms appositive plasma, which is the dominant plasma. The other etchant gas forms a negative plasma, which is the secondary plasma. The ratio of dominant plasma to the secondary plasma can be adjusted such that ion densities are uniform across the wafer, resulting in uniform etch rate over the wafer.

Abstract: Plasma etching is controlled utilizing two etchant gases to form a plasma so as to obtain controlled (e.g., uniform) etch rate across a wafer. One etchant gas forms a positive plasma, which is the dominant plasma. The other etchant gas forms a negative plasma, which is the secondary plasma. The ratio of dominant plasma to the secondary plasma can be adjusted such that ion densities are uniform across the wafer, resulting in uniform etch rate over the wafer.

Abstract: A method and apparatus are described for removing an initial gas from a gas-filled enclosure between the mask-protective device, such as a pellicle, and the patterned mask, such as a reticle, and adding a purge gas with a different composition. The gas-filled enclosure includes a vent for adding the purge gas to the enclosure and removing the initial gas from the enclosure. Adding and removing may be accomplished by using pressure, diffusion, or vacuum.

Abstract: The present invention includes a filtered mask enclosure having an exterior portion and interior regions within the exterior portion such that the interior regions have a filtering region and a purging region connected to the filtering region. The present invention further includes a method of removing a first contaminant in a gas phase, a second contaminant in a solid phase, and a third contaminant having an electrical charge from a purge gas and flowing the purge gas through a vicinity of a mask while exposing a wafer with light through the mask.

Abstract: An apparatus comprising a plasma chamber containing a plasma for a plasma-assisted material process upon a substrate; a shielding plate within the plasma chamber to actively direct ion flux to desired areas of the substrate; and a supporting structure to support the shielding plate within the chamber is disclosed.

Abstract: The present invention includes a filtered mask enclosure having an exterior portion and interior regions within the exterior portion such that the interior regions have a filtering region and a purging region connected to the filtering region. The present invention further includes a method of removing a first contaminant in a gas phase, a second contaminant in a solid phase, and a third contaminant having an electrical charge from a purge gas and flowing the purge gas through a vicinity of a mask while exposing a wafer with light through the mask.

Abstract: Plasma etching is controlled utilizing two etchant gases to form a plasma so as to obtain controlled (e.g., uniform) etch rate across a wafer. One etchant gas forms a positive plasma, which is the dominant plasma. The other etchant gas forms a negative plasma, which is the secondary plasma. The ratio of dominant plasma to the secondary plasma can be adjusted such that ion densities are uniform across the wafer, resulting in uniform etch rate over the wafer.

Abstract: The present invention includes a filtered mask enclosure having an exterior portion and interior regions within the exterior portion such that the interior regions have a filtering region and a purging region connected to the filtering region. The present invention further includes a method of removing a first contaminant in a gas phase, a second contaminant in a solid phase, and a third contaminant having an electrical charge from a purge gas and flowing the purge gas through a vicinity of a mask while exposing a wafer with light through the mask.

Abstract: An apparatus comprising a plasma chamber containing a plasma for a plasma-assisted material process upon a substrate; a shielding plate within the plasma chamber to actively direct ion flux to desired areas of the substrate; and a supporting structure to support the shielding plate within the chamber is disclosed.

Abstract: A method and apparatus are described for removing an initial gas from a gas-filled enclosure between the mask-protective device, such as a pellicle, and the patterned mask, such as a reticle, and adding a purge gas with a different composition. The gas-filled enclosure includes a vent for adding the purge gas to the chamber and removing the initial gas from the chamber. Adding and removing may be accomplished by using pressure, diffusion, vacuum, or other means.