Abstract: In an embodiment, a package includes an integrated circuit device attached to a substrate; an encapsulant disposed over the substrate and laterally around the integrated circuit device, wherein a top surface of the encapsulant is coplanar with the top surface of the integrated circuit device; and a heat dissipation structure disposed over the integrated circuit device and the encapsulant, wherein the heat dissipation structure includes a spreading layer disposed over the encapsulant and the integrated circuit device, wherein the spreading layer includes a plurality of islands, wherein at least a portion of the islands are arranged as lines extending in a first direction in a plan view; a plurality of pillars disposed over the islands of the spreading layer; and nanostructures disposed over the pillars.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.

Abstract: An absorption type near-infrared filter comprising a first multilayer film, a second multilayer film, and an absorption film, wherein in the ultraviolet band, the difference of between the wavelength with the transmittance at 80% of the absorbing film and the wavelength with the reflectivity at 80% of the first multilayer film falls in the range between 25 nm and 37 nm, the difference of between the wavelength with the transmittance at 50% of the absorbing film and the wavelength with the reflectivity at 50% of the first multilayer film falls in the range between 6 nm and 14 nm, and the difference of between the wavelength with the transmittance at 20% of the absorbing film and the wavelength with the reflectivity at 20% of the first multilayer film falls in the range between ?6 nm and 2.5 nm.

Abstract: This disclosure provides an electronic device and a manufacturing method thereof. The electronic device includes a first substrate, a second substrate, a first supporting member and a plurality of second supporting members. The first supporting member and the second supporting members are disposed between the first substrate and the second substrate. The first supporting member includes a first bottom surface and a first top surface. The second supporting member is disposed adjacent to the first supporting member and includes a second bottom surface and a second top surface. The difference between the radius of the first bottom surface and the radius of the first top surface is defined as a first radius bias. The difference between the radius of the second bottom surface and the radius of the second top surface is defined as a second radius bias. The first radius bias is greater than the second radius bias.

Abstract: Some implementations described herein include systems and techniques for fabricating a semiconductor die package that includes a cooling interface region formed in surface of an integrated circuit die. The cooling interface region, which includes a combination of channel regions and pillar structures, may be directly exposed to a fluid above and/or around the semiconductor die package.

Abstract: Disclosed herein is an improvement to prior art feature pyramids for general object detection that inserts a simple norm calibration (NC) operation between the feature pyramids and detection head to alleviate and balance the norm bias caused by feature pyramid network (FPN) and which leverages an enhanced multi-feature selective strategy (MS) during training to assign the ground-truth to one or more levels of the feature pyramid.

Abstract: An integrated circuit device includes a gate stack disposed over a substrate. A first L-shaped spacer is disposed along a first sidewall of the gate stack and a second L-shaped spacer is disposed along a second sidewall of the gate stack. The first L-shaped spacer and the second L-shaped spacer include silicon and carbon. A first source/drain epitaxy region and a second source/drain epitaxy region are disposed over the substrate. The gate stack is disposed between the first source/drain epitaxy region and the second source/drain epitaxy region. An interlevel dielectric (ILD) layer disposed over the substrate. The ILD layer is disposed between the first source/drain epitaxy region and a portion of the first L-shaped spacer disposed along the first sidewall of the gate stack and between the second source/drain epitaxy region and a portion of the second L-shaped spacer disposed along the second sidewall of the gate stack.

Abstract: In a method of manufacturing a semiconductor device, a field effect transistor (FET) having a metal gate structure, a source and a drain over a substrate is formed. A first frontside contact disposed between dummy metal gate structures is formed over an isolation insulating layer. A frontside wiring layer is formed over the first frontside contact. A part of the substrate is removed from a backside of the substrate so that a bottom of the isolation insulating layer is exposed. A first opening is formed in the isolation insulating layer from the bottom of the isolation insulating layer to expose a bottom of the first frontside contact. A first backside contact is formed by filling the first opening with a conductive material to connect the first frontside contact.

Abstract: Certain aspects of the present disclosure provide techniques for global motion modeling. Embodiments include receiving a first image and a second image from a camera attached to a moving object. Embodiments include identifying a pixel in the first image. Embodiments include determining, based on one or more parameters associated with the camera, a vector representing a range of locations in which a real-world point corresponding to the pixel is likely to be found in the second image, wherein the parameters associated with the camera comprise: a first parameter related to a location of the camera relative to a ground surface; a second parameter related to motion of the moving object; and a third parameter related to an orientation of the camera relative to the ground surface. Embodiments include determining, using the vector, a location of the real-world point in the second image.

Abstract: Method and system to facilitate transactions in a particular on-line trading platform from a third party web site may be utilized beneficially to enhance a user's experience in purchasing items referenced on third party web pages. When a user encounters, on a third party web site, a presentation of an item that is linked to a listing maintained by the on-line trading platform, the user may simply click on the presentation of the item, which causes presentation of a visual control selectable to launch a transaction processing flow facilitated by the on-line trading platform, without requiring the user to leave the third party web site.

Abstract: A method of manufacturing a semiconductor device includes forming a gate trench over a semiconductor substrate, depositing a gate dielectric layer and a work function layer in the gate trench, depositing a capping layer over the work function layer, passivating a surface portion of the capping layer to form a passivation layer, removing the passivation layer, depositing a fill layer in the gate trench, recessing the fill layer and the capping layer, and forming a contact metal layer above the capping layer in the gate trench.

Abstract: In a method of manufacturing a semiconductor device, a fin structure is formed by patterning a semiconductor layer, an isolation insulating layer is formed such that an upper portion of the fin structure protrudes from the isolation insulating layer, a gate dielectric layer is formed by a deposition process, a nitridation operation is performed on the gate dielectric layer, and a gate electrode layer is formed over the gate dielectric layer. The gate dielectric layer as formed includes silicon oxide, and the nitridation operation comprises a plasma nitridation operation using a N2 gas and a NH3 gas.

Abstract: A method of forming a semiconductor device includes: forming a dummy gate over a fin, where the fin protrudes above a substrate; surrounding the dummy gate with a dielectric material; and replacing the dummy gate with a replacement gate structure, where replacing the dummy gate includes: forming a gate trench in the dielectric material, where forming the gate trench includes removing the dummy gate; forming a metal-gate stack in the gate trench, where forming the metal-gate stack includes forming a gate dielectric layer, a first work function layer, and a gap-filling material sequentially in the gate trench; and enlarging a volume of the gap-filling material in the gate trench.

Abstract: A method of forming a semiconductor device includes: forming a dummy gate over a fin, where the fin protrudes above a substrate; surrounding the dummy gate with a dielectric material; and replacing the dummy gate with a replacement gate structure, where replacing the dummy gate includes: forming a gate trench in the dielectric material, where forming the gate trench includes removing the dummy gate; forming a metal-gate stack in the gate trench, where forming the metal-gate stack includes forming a gate dielectric layer, a first work function layer, and a gap-filling material sequentially in the gate trench; and enlarging a volume of the gap-filling material in the gate trench.

Abstract: An indication of a touch on a touch-enabled screen of a device is received that indicates a selection of a date facet in a listing of items. The date facet denotes a temporal indicator, other facets denote non-temporal indicators. An indication of a pinch gesture is received. The date facet is scaled to produce a scaled-facet listing. The scaling includes modifying a degree of a characteristic of the date facet in an increasing amount including producing a scaled-out listing implemented as an updated portion of item data having a different temporal indicator than an initial display of the item data by an amount proportional to a magnitude of a pinch gesture characteristic of the pinch gesture. The scaled-facet listing is displayed by exposing an updated set of the item data having the modified degree of the characteristic and replacing previous item data with the scaled-out listing.

Abstract: A thermal concrete wing nut anchor includes a screw having an external thread, and a wing nut mounted on the screw. The screw has a first end provided with an enlarged stop flange, and a second end provided with a drilling tip. The stop flange is provided with a driving head. The wing nut is made of a metal sheet plate which is formed integrally by pressing. The wing nut has a middle provided with a first ear and at least one second ear. The wing nut has an internal thread extending through the first ear and the at least one second ear. The external thread of the screw is screwed through the internal thread of the wing nut.

Abstract: Method and system to facilitate transactions in a particular on-line trading platform from a third party web site may be utilized beneficially to enhance a user's experience in purchasing items referenced on third party web pages. When a user encounters, on a third party web site, a presentation of an item that is linked to a listing maintained by the on-line trading platform, the user may simply click on the presentation of the item, which causes presentation of a visual control selectable to launch a transaction processing flow facilitated by the on-line trading platform, without requiring the user to leave the third party web site.

Abstract: Method and system to facilitate transactions in a particular on-line trading platform from a third party web site may be utilized beneficially to enhance a user's experience in purchasing items referenced on third party web pages. When a user encounters, on a third party web site, a presentation of an item that is linked to a listing maintained by the on-line trading platform, the user may simply click on the presentation of the item, which causes presentation of a visual control selectable to launch a transaction processing flow facilitated by the on-line trading platform, without requiring the user to leave the third party web site.

Abstract: A package on package structure includes a first package, a plurality of conductive bumps, a second package and an underfill. The conductive bumps are disposed on a second surface of the first package and electrically connected to the first package. The second package is disposed on the second surface of the first package through the conductive bumps, and includes a semiconductor device and an encapsulating material encapsulating the semiconductor device. A shortest distance from an upper surface of the encapsulating material to an upper surface of the semiconductor device is greater than or substantially equal to twice a thickness of the semiconductor device. The underfill is filled between the first package and the second package.

Abstract: A method of forming a semiconductor device includes: forming a dummy gate over a fin, where the fin protrudes above a substrate; surrounding the dummy gate with a dielectric material; and replacing the dummy gate with a replacement gate structure, where replacing the dummy gate includes: forming a gate trench in the dielectric material, where forming the gate trench includes removing the dummy gate; forming a metal-gate stack in the gate trench, where forming the metal-gate stack includes forming a gate dielectric layer, a first work function layer, and a gap-filling material sequentially in the gate trench; and enlarging a volume of the gap-filling material in the gate trench.