Abstract: An image encoding/decoding method, device and recording medium based sed on multiple compression levels disclosure may include extracting a region of interest for machine vision from an input image, determining a compression level of the region of interest, and encoding the compression level of the region of interest.

Abstract: An object-based image encoding/decoding method and device of the present disclosure may include an image partition step which partitions an image to obtain a first object region, a region scaling step which scales the first object region based on a scaling factor of the first object region to obtain a second objection region, a region merging step which merges the second object region with at least one of an object region different from the second object region or a non-object region to obtain a merged image, and an image reconstruction step which reconstructs the merged image.

Abstract: A pellicle including a water-soluble adhesive and a photomask assembly including the pellicle are provided. A pellicle may include a membrane, a pellicle frame, and a water-soluble adhesive disposed on the pellicle frame. The water-soluble adhesive may be prepared by a mixture including a water-soluble acrylic adhesive material in an amount of about 40% to about 55% by weight of the mixture, water or a solution of water and alcohol in an amount of about 40% to about 55% by weight of the mixture, and an additive in an amount of about 1% to about 5% by weight of the mixture.

Abstract: A pellicle including a water-soluble adhesive and a photomask assembly including the pellicle are provided. A pellicle may include a membrane, a pellicle frame, and a water-soluble adhesive disposed on the pellicle frame. The water-soluble adhesive may be prepared by a mixture including a water-soluble acrylic adhesive material in an amount of about 40% to about 55% by weight of the mixture, water or a solution of water and alcohol in an amount of about 40% to about 55% by weight of the mixture, and an additive in an amount of about 1% to about 5% by weight of the mixture.

Abstract: A pellicle frame, including aluminum, aluminum oxide, and a transition metal.

Abstract: A reflective photomask blank, a reflective photomask and an integrated circuit device manufactured by using a reflective photomask, include a multi-layered reflection layer; a capping layer on the multi-layered reflection layer and including a first transition metal; a passivation film contacting at least a portion of the capping layer on a side opposite to the multi-layered reflection layer and including a second transition metal and a nitrogen (N) atom; and a light absorption pattern covering a portion of the capping layer.

Abstract: A reflective photomask blank, a reflective photomask and an integrated circuit device manufactured by using a reflective photomask, include a multi-layered reflection layer; a capping layer on the multi-layered reflection layer and including a first transition metal; a passivation film contacting at least a portion of the capping layer on a side opposite to the multi-layered reflection layer and including a second transition metal and a nitrogen (N) atom; and a light absorption pattern covering a portion of the capping layer.

Abstract: A pellicle frame, including aluminum, aluminum oxide, and a transition metal.

Abstract: A photomask includes an ion trapping layer and a method of manufacturing a semiconductor device uses the photomask. The photomask includes a transparent substrate and an ion trapping layer formed on a first region of the transparent substrate to trap ions present near the transparent substrate. In manufacturing a semiconductor device, a photosensitive film formed on a substrate is exposed through the photomask in which the ion trapping layer is formed on the transparent substrate, and the substrate is processed using the photosensitive film obtained as the result of the exposure.

Abstract: A pellicle frame, including aluminum, aluminum oxide, and a transition metal.

Abstract: A photomask includes an ion trapping layer and a method of manufacturing a semiconductor device uses the photomask. The photomask includes a transparent substrate and an ion trapping layer formed on a first region of the transparent substrate to trap ions present near the transparent substrate. In manufacturing a semiconductor device, a photosensitive film formed on a substrate is exposed through the photomask in which the ion trapping layer is formed on the transparent substrate, and the substrate is processed using the photosensitive film obtained as the result of the exposure.

Abstract: The present invention relates to a tree resistant, cross-linkable polyolefin resin composition for insulation capable of improving electric properties of an insulator of the high voltage power cable and thus improving a long-life stability of an underground distribution cable as having a more superior resistance to water tree deterioration caused by moisture, superior thermal-oxidative stability, superior scorch resistance when extruding as well as obtaining a proper cross-linking degree when cross-linking.

Abstract: A composition for cleaning a phase shift mask, including an organic acid ammonium salt, wherein a base ionization constant (Kb) of organic acid ions is larger than an acid ionization constant (Ka) of ammonium ions, hydrogen peroxide, and water, and associated methods.