Abstract: An electroporation system including one or more of a pipette, a pipette tip, a pipette docking assembly, and a pulse generator. The pipette docking assembly includes a pipette station, a pipette station guard, and a reservoir (e.g., a buffer tube). A method for transfecting a cell with a payload including providing an electroporation system, providing the cell, providing the payload, introducing the cell and the payload into a pipette tip, and electroporating the cell within the pipette tip by operating the electroporation system.

Abstract: An anaerobic biodegradation accelerator (ABA) for a host polymeric material, an ABA-incorporated polymeric material, and methods for production and application thereof are provided. The ABA includes a carrier matrix, at least one biotic component, a protective layer, a biodiversity promotor, a surfactant, a compatibilizer, an antioxidant, a plasticizer and a properties modifier. The ABA significantly enhances biodegradation rate of polymeric materials in anaerobic environments, and does not impact significantly on mechanical properties and other properties of the original polymeric material including food contact safety when they are used in food contact safe products such as cutleries, lunch boxes, cups and cup lids.

Abstract: The present invention pertains to a composition having a protective effect during islet transplantation, and more specifically, to a composition containing a compound of chemical formula 1 or a pharmaceutically acceptable salt thereof, and capable of providing a protective effect against oxidative stress, inflammation, etc. during islet transplantation.

Abstract: Provided is a power chip integration module including: a first semiconductor chip; a second semiconductor chip; a wiring layer on an upper surface or a lower surface of the first semiconductor chip and the second semiconductor chip to electrically connect the first semiconductor chip and the second semiconductor chip; an internal electrode extending from an internal electrode pad on an upper surface of at least one of the wiring layer, the first semiconductor chip, the second semiconductor chip, and combinations thereof to an external solder pad formed on an installation surface of the first semiconductor chip and the second semiconductor chip; and a first molding member in a shape to surround at least a portion of the first semiconductor chip, the second semiconductor chip, and the internal electrode.

Abstract: The present disclosure relates to biocarriers with high microbial loading and durability useful for waste treatment, waste treatment systems comprising the same, and methods of use thereof.

Abstract: Provided is a power chip integration module including: a first semiconductor chip; a second semiconductor chip; a wiring layer on an upper surface or a lower surface of the first semiconductor chip and the second semiconductor chip to electrically connect the first semiconductor chip and the second semiconductor chip; an internal electrode extending from an internal electrode pad on an upper surface of at least one of the wiring layer, the first semiconductor chip, the second semiconductor chip, and combinations thereof to an external solder pad formed on an installation surface of the first semiconductor chip and the second semiconductor chip; and a first molding member in a shape to surround at least a portion of the first semiconductor chip, the second semiconductor chip, and the internal electrode.

Abstract: The present invention provides a semiconductor device comprising a substrate including an active region and an edge region and containing a semiconductor doped with impurities having a first conductivity type; an insulating film disposed on the edge region of the substrate; a field plate pattern disposed on the insulating film; and at least one first doped region having a second conductivity type buried in the edge region of the substrate and extending in a direction having a vector component parallel to an upper surface of the substrate.

Abstract: Provided is a power semiconductor device comprising a gate electrode in a trench of a substrate; a body region having a first conductivity type on one side of the gate electrode; a source region having a second conductivity type adjacent to the gate electrode; a floating region having a first conductivity type on the other side of the gate electrode; an edge doped region having a first conductivity type spaced apart from the floating region and electrically connected to the source region; an edge junction isolation region having a second conductivity type between the floating region and the edge doped region; and a drift region having a second conductivity type below the floating, edge doped, and edge junction isolation regions, wherein the doping concentration of a second conductivity type in the edge junction isolation region is higher than the doping concentration of a second conductivity type in the drift region.

Abstract: Provided are a semiconductor device, the semiconductor device comprise, a substrate which comprises a first surface and a second surface facing the first surface, an epitaxial layer which is formed on the first surface of the substrate and has a first conductivity type, a base region which is formed in the epitaxial layer and has a second conductivity type different from the first conductivity type, a source region which is formed in the base region and has the first conductivity type, a channel region which is formed in the base region to bc separated from the source region and has the first conductivity type and a barrier region which is formed between the source region and the channel region and has the second conductivity type.

Abstract: Provided is a power semiconductor device comprising a pair of gate electrodes respectively disposed in a first trench and a second trench spaced apart from each other in a substrate; a body region having a first conductivity type disposed between the first trench and the second trench; a pair of floating regions having a first conductivity type spaced apart from each other and surrounding a bottom surface and at least one side surface of the first trench and the second trench, respectively; and a drift region having a second conductivity type which extends from below the pair of floating regions through a region between the pair of floating regions to the body region, wherein, in the drift region, the doping concentration of a second conductivity type between the pair of floating regions is higher than the doping concentration of a second conductivity type below the pair of floating regions.

Abstract: Provided is a power semiconductor device comprising a pair of gate electrodes respectively disposed in a first trench and a second trench spaced apart from each other in a substrate; a body region having a first conductivity type disposed between the first trench and the second trench; a pair of floating regions having a first conductivity type spaced apart from each other and surrounding a bottom surface and at least one side surface of the first trench and the second trench, respectively; and a drift region having a second conductivity type which extends from below the pair of floating regions through a region between the pair of floating regions to the body region, wherein, in the drift region, the doping concentration of a second conductivity type between the pair of floating regions is higher than the doping concentration of a second conductivity type below the pair of floating regions.

Abstract: The present invention provides a semiconductor device comprising a substrate including an active region and an edge region and containing a semiconductor doped with impurities having a first conductivity type; an insulating film disposed on the edge region of the substrate; a field plate pattern disposed on the insulating film; and at least one first doped region having a second conductivity type buried in the edge region of the substrate and extending in a direction having a vector component parallel to an upper surface of the substrate.

Abstract: Provided is a power semiconductor device comprising a gate electrode in a trench of a substrate; a body region having a first conductivity type on one side of the gate electrode; a source region having a second conductivity type adjacent to the gate electrode; a floating region having a first conductivity type on the other side of the gate electrode; an edge doped region having a first conductivity type spaced apart from the floating region and electrically connected to the source region; an edge junction isolation region having a second conductivity type between the floating region and the edge doped region; and a drift region having a second conductivity type below the floating, edge doped, and edge junction isolation regions, wherein the doping concentration of a second conductivity type in the edge junction isolation region is higher than the doping concentration of a second conductivity type in the drift region.

Abstract: Provided are a semiconductor device, the semiconductor device comprise, a substrate which comprises a first surface and a second surface facing the first surface, an epitaxial layer which is formed on the first surface of the substrate and has a first conductivity type, a base region which is formed in the epitaxial layer and has a second conductivity type different from the first conductivity type, a source region which is formed in the base region and has the first conductivity type, a channel region which is formed in the base region to be separated from the source region and has the first conductivity type and a barrier region which is formed between the source region and the channel region and has the second conductivity type

Abstract: Disclosed are a light emitting device, a conductive substrate; a second electrode layer on the conductive substrate and including a center portion and a peripheral portion surrounding the center portion; a protective layer on the peripheral portion of the second electrode layer; and a light emitting structure including a second conductive semiconductor layer on the second electrode layer, an active layer on the second conductive semiconductor layer and a first conductive semiconductor layer on the active layer; and a first electrode layer on the first conductive semiconductor layer, wherein the second conductive semiconductor layer includes edge portions extending outside of the light emitting structure.

Abstract: A display panel includes: a substrate; a plurality of pixels on the substrate, the plurality of pixels including an emitting element; a power supply line on the substrate, the power supply line being configured to receive power supplied from a power supply; and a temperature sensor at a peripheral region of the power supply line and for sensing a temperature of the power supply line.

Abstract: A display device includes a display panel including a plurality of pixels, a power supply configured to generate a power voltage to drive the plurality of pixels and positioned external to the display panel, and a power voltage controller configured to receive the power voltage from the power supply, to generate a divided voltage by dividing the power voltage, to output a compare result signal by comparing the divided voltage to a predetermined reference voltage, and to control an output of the power supply to allow a voltage level of the divided voltage to be the same as a voltage level of the reference voltage based on the compare result signal.

Abstract: Disclosed are a light emitting device, a conductive substrate; a second electrode layer on the conductive substrate and including a center portion and a peripheral portion surrounding the center portion; a protective layer on the peripheral portion of the second electrode layer; and a light emitting structure including a second conductive semiconductor layer on the second electrode layer, an active layer on the second conductive semiconductor layer and a first conductive semiconductor layer on the active layer; and a first electrode layer on the first conductive semiconductor layer, wherein the second conductive semiconductor layer includes edge portions extending outside of the light emitting structure.

Abstract: A light emitting device including a conductive support substrate; an electrode layer on the conductive support substrate, and including side portions such that a center upper portion of the electrode layer protrudes upward from the conductive support substrate; a protective layer on the side portions of the electrode layer, the protective layer including an insulating material having a higher resistance than that of the electrode layer and a top surface of the protective layer is in line with a top surface of the protruding center upper portion of the electrode layer; and a light emitting structure including a second conductive semiconductor layer on the electrode layer and at least a portion of the protective layer, an active layer on the second conductive semiconductor layer and a first conductive semiconductor layer on the active layer.

Abstract: The closing and sealing device for use in air admittance valves includes a valve housing (10) designed to be connected to the waste water pipe system, an upper cap (14) and a valve closing and sealing device which includes a fixed valve seat (22) and a movable closing member (24). The housing (10) includes at least one passageway (16) in communication with the surrounding atmospheric air, and at least one passageway (18) in connection with the inner space (19) of the sewage system, each of the passageways being in contact with the movable closing member (24).