Abstract: In order to achieve the highly reliable and highly functional semiconductor device capable of the high-speed transmission by stacking thin chips and substrates, a connecting process and a connecting structure capable of making a solid connection at a low temperature with a low load and maintaining the shape of a connecting portion even if the connecting portion is heated in the stacking process and the subsequent mounting process are provided. In a semiconductor device in which semiconductor chips or wiring boards on which semiconductor chips are mounted are stacked, a connecting structure between electrodes of the stacked semiconductor chips or wiring boards includes a pair of electrodes mainly made of Cu and a solder layer made of Sn—In based alloy sandwiched between the electrodes, and Sn—Cu—Ni intermetallic compounds are dispersed in the solder layer.

Abstract: In order to achieve the highly reliable and highly functional semiconductor device capable of the high-speed transmission by stacking thin chips and substrates, a connecting process and a connecting structure capable of making a solid connection at a low temperature with a low load and maintaining the shape of a connecting portion even if the connecting portion is heated in the stacking process and the subsequent mounting process are provided. In a semiconductor device in which semiconductor chips or wiring boards on which semiconductor chips are mounted are stacked, a connecting structure between electrodes of the stacked semiconductor chips or wiring boards includes a pair of electrodes mainly made of Cu and a solder layer made of Sn—In based alloy sandwiched between the electrodes, and Sn—Cu—Ni intermetallic compounds are dispersed in the solder layer.

Abstract: A method of forming narrow-pitch flip-chip bonding electrodes and wire bonding electrodes at the same time is provided so as to reduce the cost of a substrate. In addition, a low-cost solder supply method and a flip-chip bonding method to a thin Au layer are provided. A stacked layer of a Cu layer 23 and a Ni layer 24 is employed as the electrode structure, and an Au layer 25 is plated on the outer periphery thereof. In the flip-chip bonding, dissolution of Au into the solder is minimized by employing a metal jet system in the soldering to the electrodes, so that the formation of Sn—Au having a high melting point is prevented, and at the same time, the wire-bondable Au layer 25 is ensured.

Abstract: A solder foil formed from a material comprising particles of Cu, etc. as metal particles and Sn particles as solder particles by rolling is suitable for solder bonding at a high temperature side in temperature-hierarchical bonding, and semiconductor devices and electronic devices produced by use of such solder bonding have distinguished reliability of mechanical characteristics, etc.

Abstract: In an electronic device which realizes high-temperature-side solder bonding in temperature-hierarchical bonding, a bonding portion between a semiconductor device and a substrate is formed of metal balls made of Cu, or the like, and compounds formed of metal balls and Sn, and the metal balls are bonded together by the compounds.

Abstract: A solder foil formed from a material comprising particles of Cu, etc. as metal particles and Sn particles as solder particles by rolling is suitable for solder bonding at a high temperature side in temperature-hierarchical bonding, and semiconductor devices and electronic devices produced by use of such solder bonding have distinguished reliability of mechanical characteristics, etc.

Abstract: In a solder that realizes high-temperature-side solder bonding in temperature-hierarchical bonding, a connection portion between a semiconductor device and a substrate is formed of metal balls made of Cu or the like and compounds formed of metal balls and Sn, and the metal balls are bonded together by the compounds.

Abstract: It is an object of the present invention to provide an electronic device using completely new soldered connection, and more particularly to achieve flip chip bonding on a high temperature side in a temperature hierarchy connection as an alternative method for high Pb containing solder including a large mount of Pb. The object can be achieved by using a configuration in which metallic balls including a single metal, an alloy, a chemical compound or a mixture thereof are connected by Sn or In for pads between a chip and a substrate.

Abstract: In an electronic device which realizes high-temperature-side solder bonding in temperature-hierarchical bonding, a bonding portion between a semiconductor device and a substrate is formed of metal balls made of Cu, or the like, and compounds formed of metal balls and Sn, and the metal balls are bonded together by the compounds.

Abstract: In a solder that realizes high-temperature-side solder bonding in temperature-hierarchical bonding, a connection portion between a semiconductor device and a substrate is formed of metal balls made of Cu or the like and compounds formed of metal balls and Sn, and the metal balls are bonded together by the compounds.

Abstract: A circuit board has a first electrode and a second electrode connected with respective electrodes of a chip and a first insulating layer with openings provided at respective positions corresponding to the first electrode and the second electrode. The openings of the first insulating layer are shaped so that the first insulating layer does not cover at least a region below the chip on the peripheral edges of the first and second electrodes.

Abstract: There is provided an electronic device comprising at least one electronic part and a substrate on which said electronic part is mounted, said electronic part and said substrate being bonded by a joint comprising a phase of Al particles and another phase of a Al—Mg—Ge—Zn alloy, said Al particles being connected to each other by said Al—Mg—Ge—Zn alloy phase.

Abstract: There is provided an electronic device comprising at least one electronic part and a substrate on which said electronic part is mounted, said electronic part and said substrate being bonded by a joint comprising a phase of Al particles and another phase of a Al—Mg—Ge—Zn alloy, said Al particles being connected to each other by said Al—Mg—Ge—Zn alloy phase.