Patents by Inventor Hang-Thung Wang

Hang-Thung Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Rare-earth element-doped III-V compound semiconductor schottky diodes and device formed thereby
    Patent number: 6225200
    Abstract: A semiconductor device has an improved schottky barrier junction. The device includes: a substrate; an epitaxial layer covering the substrate and lightly doped with a dopant selected from a group consisting of a rare earth element and an oxidant of a rare earth element; and a metal layer covering the epitaxial layer and forming said schottky barrier junction with said epitaxial layer.
    Type: Grant
    Filed: September 11, 1998
    Date of Patent: May 1, 2001
    Assignee: National Science Council
    Inventors: Liann-Be Chang, Hang-Thung Wang
  • Rare-earth schottky diode structure
    Patent number: 6087702
    Abstract: A method for forming a Schottky diode structure is disclosed. The method includes the steps of: a) Providing a substrate; b) forming a rare-earth containing layer over the substrate; and c) forming a metal layer over the rare-earth containing layer. The Schottky diode structure with a rare-earth containing layer has the properties of high-temperature stability, high Schottky barrier height (SBH), and low reverse leakage current.
    Type: Grant
    Filed: April 2, 1998
    Date of Patent: July 11, 2000
    Assignee: National Science Council
    Inventors: Liann-Be Chang, Hang-Thung Wang
  • Rare-earth element-doped III-V compound semiconductor schottky diodes and device formed thereby
    Patent number: 5847437
    Abstract: A semiconductor device has an improved schottky barrier junction. The device includes: a substrate; an epitaxial layer covering the substrate and lightly doped with a dopant selected from a group consisting of a rare earth element and an oxide of a rare earth element; and a metal layer covering the epitaxial layer and forming said schottky barrier junction with said epitaxial layer.
    Type: Grant
    Filed: December 23, 1996
    Date of Patent: December 8, 1998
    Assignee: National Science Council
    Inventors: Liann-Be Chang, Hang-Thung Wang