Patents by Inventor Hannes Mio

Hannes Mio has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated circuit device including tunable substrate capacitors
    Patent number: 8061621
    Abstract: An integrated circuit device and method. A substrate having contacts has a plurality of capacitors thereon. A plurality of fusible links selectively connect the plurality of capacitors to one another and selected ones of the capacitors to the contacts. In this manner, for example, the capacitance value can be adjusted to tune an antenna mounted on the substrate during testing of the integrated circuit device.
    Type: Grant
    Filed: March 7, 2008
    Date of Patent: November 22, 2011
    Assignee: Infineon Technologies AG
    Inventors: Hannes Mio, Thomas Beer
  • Method and apparatus for making semiconductor devices including a foil
    Patent number: 7999362
    Abstract: A method for manufacturing a semiconductor device including covering a portion of at least one semiconductor device with a foil, including covering at least one target region of the semiconductor device, and illuminating the foil with a laser to singulate from the foil a portion covering the at least one target region of the at least one semiconductor device.
    Type: Grant
    Filed: January 25, 2008
    Date of Patent: August 16, 2011
    Assignee: Infineon Technologies AG
    Inventors: Hannes Mio, Horst Groeninger, Hermann Vilsmeier
  • INTEGRATED CIRUIT DEVICE INCLUDING TUNABLE SUBSTRATE CAPACITORS
    Publication number: 20090224055
    Abstract: An integrated circuit device and method. A substrate having contacts has a plurality of capacitors thereon. A plurality of fusible links selectively connect the plurality of capacitors to one another and selected ones of the capacitors to the contacts. In this manner, for example, the capacitance value can be adjusted to tune an antenna mounted on the substrate during testing of the integrated circuit device.
    Type: Application
    Filed: March 7, 2008
    Publication date: September 10, 2009
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Hannes Mio, Thomas Beer
  • METHOD AND APPARATUS FOR MAKING SEMICONDUCTOR DEVICES INCLUDING A FOIL
    Publication number: 20090189265
    Abstract: A method for manufacturing a semiconductor device including covering a portion of at least one semiconductor device with a foil, including covering at least one target region of the semiconductor device, and illuminating the foil with a laser to singulate from the foil a portion covering the at least one target region of the at least one semiconductor device.
    Type: Application
    Filed: January 25, 2008
    Publication date: July 30, 2009
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Hannes Mio, Horst Groninger, Hermann Vilsmeier
  • IC chip with nanowires
    Patent number: 7339186
    Abstract: Arrangement of nanowires with PN junctions between bit lines and word lines are arranged as a ROM memory cell array. A number of the nanowires have dielectric regions and are present only as a dummy. The connections between word and bit lines may also exist as transistors which turn on or turn off only when a gate voltage is applied. A number of these transistors are constructed in complementary fashion and/or have insulating regions built in and serve as a dummy.
    Type: Grant
    Filed: July 29, 2004
    Date of Patent: March 4, 2008
    Assignee: Infineon Technologies AG
    Inventors: Hannes Mio, Franz Kreupl
  • IC chip with nanowires
    Publication number: 20050029654
    Abstract: Arrangement of nanowires with PN junctions between bit lines and word lines are arranged as a ROM memory cell array. A number of the nanowires have dielectric regions and are present only as a dummy. The connections between word and bit lines may also exist as transistors which turn on or turn off only when a gate voltage is applied. A number of these transistors are constructed in complementary fashion and/or have insulating regions built in and serve as a dummy.
    Type: Application
    Filed: July 29, 2004
    Publication date: February 10, 2005
    Applicant: Infineon Technologies AG
    Inventors: Hannes Mio, Franz Kreupl